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W971GG6NB25I
IC DRAM 1GBIT SSTL 18 84TFBGA
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- Mfr。パート #W971GG6NB25I
- パッケージ
- データシート W971GG6NB25I DataSheet
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仕様
| Part Status | Active |
| Base Product Number | W971GG6 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | SSTL_18 |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 84-TFBGA |
| Supplier Device Package | 84-TFBGA (8x12.5) |
| Packaging | Tray |
| Access Time | 57.5 ns |
概要
Description
The W971GG6NB25I is a DRAM (Dynamic Random Access Memory) chip manufactured by Winbond Electronics. It is designed for use in various electronic devices, particularly in applications requiring high-speed memory. The chip typically offers a storage capacity of 256 megabits and operates on a 3.3V power supply. With a 25ns access time, it is suitable for applications in consumer electronics, automotive systems, and industrial equipment. The W971GG6NB25I features a wide I/O interface, allowing for efficient data transfer rates and improved performance in memory-intensive tasks.
This DRAM variant supports various memory configurations, facilitating easy integration into existing systems. Its reliability and speed make it a preferred choice for manufacturers seeking cost-effective memory solutions. Overall, the W971GG6NB25I is a versatile component that plays a crucial role in enhancing the performance of electronic devices.
This DRAM variant supports various memory configurations, facilitating easy integration into existing systems. Its reliability and speed make it a preferred choice for manufacturers seeking cost-effective memory solutions. Overall, the W971GG6NB25I is a versatile component that plays a crucial role in enhancing the performance of electronic devices.
Features
The W971GG6NB25I is a 512Mb (64MB) DDR2 SDRAM (Synchronous Dynamic Random Access Memory) chip, designed for high-performance applications. Key features include:
1. Memory Density: 512Mb capacity, suitable for various electronic devices.
2. Technology: DDR2 SDRAM, which offers double the data rate of its predecessor, DDR SDRAM, leading to improved performance.
3. Speed: Operates at speeds of up to 667 Mbps, facilitating faster data transfer.
4. Voltage: Typically operates at a voltage of 1.8V, allowing for lower power consumption compared to older memory types.
5. Package Type: Available in a standard TSOP II (Thin Small Outline Package) for easy integration into various applications.
6. Burst Length: Supports a burst length of 4 or 8, enhancing data throughput.
This memory chip is commonly used in consumer electronics, networking equipment, and some industrial applications, providing efficient performance for multitasking and demanding tasks.
1. Memory Density: 512Mb capacity, suitable for various electronic devices.
2. Technology: DDR2 SDRAM, which offers double the data rate of its predecessor, DDR SDRAM, leading to improved performance.
3. Speed: Operates at speeds of up to 667 Mbps, facilitating faster data transfer.
4. Voltage: Typically operates at a voltage of 1.8V, allowing for lower power consumption compared to older memory types.
5. Package Type: Available in a standard TSOP II (Thin Small Outline Package) for easy integration into various applications.
6. Burst Length: Supports a burst length of 4 or 8, enhancing data throughput.
This memory chip is commonly used in consumer electronics, networking equipment, and some industrial applications, providing efficient performance for multitasking and demanding tasks.
Package
The W971GG6NB25I is a DDR2 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This compact package type allows for efficient use of space on circuit boards while providing reliable electrical connections.
Pinout
The W971GG6NB25I is a DRAM chip with a pin count of 54 pins. It is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) component designed for use in various electronic devices, such as computers and consumer electronics.
The primary functions of this chip include data storage and retrieval, providing high-speed memory access to improve system performance. It operates at a voltage of 1.5V and supports a data rate of 1600 MT/s (megatransfers per second). The chip's architecture allows for efficient data transfer and low power consumption, making it suitable for modern applications requiring reliable memory solutions.
The primary functions of this chip include data storage and retrieval, providing high-speed memory access to improve system performance. It operates at a voltage of 1.5V and supports a data rate of 1600 MT/s (megatransfers per second). The chip's architecture allows for efficient data transfer and low power consumption, making it suitable for modern applications requiring reliable memory solutions.
Manufacturer
The W971GG6NB25I is manufactured by Winbond Electronics Corporation, a Taiwanese semiconductor company. Winbond specializes in memory products, including DRAM and flash memory, as well as various other integrated circuits. Founded in 1987, the company focuses on providing innovative memory solutions for a wide range of applications, such as consumer electronics, industrial uses, and automotive systems. Winbond is recognized for its contributions to the memory market, particularly in specialty DRAM and NAND flash memory products.
Application
The W971GG6NB25I is a 1Gb DDR2 SDRAM memory chip, primarily used in applications such as mobile devices, digital TVs, set-top boxes, and gaming consoles. Its low power consumption and high-speed data transfer capabilities make it suitable for consumer electronics, networking equipment, and industrial applications where reliable memory performance is essential.
Equivalent
The W971GG6NB25I chip is a 1GB DDR2 SDRAM memory chip. Equivalent products include:
1. MT47H64M16HR-25E
2. K4T1G164QE-BCE7
3. Hynix HYMD512M646C6
4. Samsung K4T1G164QE-BCE6
Always verify compatibility based on specifications like voltage, timings, and package type.
1. MT47H64M16HR-25E
2. K4T1G164QE-BCE7
3. Hynix HYMD512M646C6
4. Samsung K4T1G164QE-BCE6
Always verify compatibility based on specifications like voltage, timings, and package type.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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