画像は参照用のみです。
VS-65EPS12L-M3
RECTIFIER DIODE 65A 1200V TO-247
- メーカー
- Mfr。パート #VS-65EPS12L-M3
- パッケージ TO-247-2
- データシート VS-65EPS12L-M3 DataSheet
- 在庫中18763
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package | Tube |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 1200 V |
| Current-AverageRectified(Io) | 65A |
| Voltage-Forward(Vf)(Max)@If | 1.12 V @ 65 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 100 µA @ 1200 V |
| MountingType | Through Hole |
| Package/Case | TO-247-2 |
| SupplierDevicePackage | TO-247AD |
概要
Description
The VS-65EPS12L-M3 is a Schottky barrier rectifier designed for efficient power management in various electronic applications. With a current rating of 65A and a reverse voltage rating of 1200V, it provides a reliable solution for high-efficiency switching applications, including power supplies, converters, and inverters.
The device features a low forward voltage drop, which minimizes power losses and improves overall energy efficiency. Its fast recovery time enhances performance in high-frequency applications, making it suitable for use in switch-mode power supplies (SMPS) and automotive systems.
The VS-65EPS12L-M3 is housed in a robust package, ensuring good thermal management and reliability. Its construction allows for easy integration into existing designs, providing improved thermal performance and durability. Overall, this rectifier is ideal for engineers seeking to optimize power efficiency and reliability in their designs.
The device features a low forward voltage drop, which minimizes power losses and improves overall energy efficiency. Its fast recovery time enhances performance in high-frequency applications, making it suitable for use in switch-mode power supplies (SMPS) and automotive systems.
The VS-65EPS12L-M3 is housed in a robust package, ensuring good thermal management and reliability. Its construction allows for easy integration into existing designs, providing improved thermal performance and durability. Overall, this rectifier is ideal for engineers seeking to optimize power efficiency and reliability in their designs.
Features
The VS-65EPS12L-M3 is a high-performance MOSFET designed for various applications in power electronics. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 65A, enabling it to manage significant power loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses and improves efficiency in switching applications.
4. Fast Switching: The MOSFET is optimized for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Performance: It features a high thermal resistance, allowing effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and integration into circuits.
These characteristics make the VS-65EPS12L-M3 suitable for power supply, inverter systems, and other industrial applications requiring efficient power management.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 65A, enabling it to manage significant power loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses and improves efficiency in switching applications.
4. Fast Switching: The MOSFET is optimized for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Performance: It features a high thermal resistance, allowing effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and integration into circuits.
These characteristics make the VS-65EPS12L-M3 suitable for power supply, inverter systems, and other industrial applications requiring efficient power management.
Package
The VS-65EPS12L-M3 is packaged in a TO-220 form factor, which is commonly used for power semiconductor devices. This package type provides effective heat dissipation and ease of mounting on heatsinks for better thermal management.
Pinout
The VS-65EPS12L-M3 is a Schottky diode manufactured by Vishay. It features a pin count of 2.
Pin Functions:
1. Anode (A): This is the positive terminal where current flows into the diode.
2. Cathode (K): This is the negative terminal where current flows out of the diode.
The diode is designed for high efficiency and low forward voltage drop, making it suitable for applications in power management, rectification, and as a freewheeling diode in switching power supplies. Its specifications include a maximum repetitive reverse voltage (V_RRM) of 12V and a forward current (I_F) rating of 65A.
Pin Functions:
1. Anode (A): This is the positive terminal where current flows into the diode.
2. Cathode (K): This is the negative terminal where current flows out of the diode.
The diode is designed for high efficiency and low forward voltage drop, making it suitable for applications in power management, rectification, and as a freewheeling diode in switching power supplies. Its specifications include a maximum repetitive reverse voltage (V_RRM) of 12V and a forward current (I_F) rating of 65A.
Manufacturer
The VS-65EPS12L-M3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacture of discrete semiconductors and passive components. Founded in 1962, the company specializes in a wide range of electronic components, including resistors, capacitors, inductors, and diodes, among others. Vishay serves a variety of industries, including automotive, industrial, telecommunications, computing, and consumer electronics. Its products are known for their reliability and performance, making Vishay a prominent player in the electronics industry.
Application
The VS-65EPS12L-M3 is a high-performance power MOSFET primarily used in applications such as industrial power supplies, DC-DC converters, and motor control systems. Its low on-resistance and fast switching capabilities make it suitable for power management in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it can be employed in high-efficiency inverter applications for solar energy systems.
Equivalent
The VS-65EPS12L-M3 is a Schottky diode with a maximum reverse voltage of 120V and a forward current of 65A. Equivalent products include the MBRS265RLG, STPS65L120, and SRB65-120. Always verify specifications such as voltage, current ratings, temperature range, and package type for compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25U25645GXDI00
Macronix
-
MX29F040CQI-70G
Macronix