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VNN7NV04PTR-E
IC PWR DRIVER N-CHAN 1:1 SOT223
- メーカー
- Mfr。パート #VNN7NV04PTR-E
- パッケージ SOT-223
- データシート VNN7NV04PTR-E DataSheet
- 在庫中3871
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 6A |
| RdsOn(Typ) | 65mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
概要
Description
The term "VNN7NV04PTR-E" appears to be a specific code or identifier, possibly related to a product, model, or technical specification. Without context or additional information, it is challenging to determine its exact nature.
If this is a part number or model code, it likely denotes a specific item within a larger series or family of products, possibly in the fields of electronics, manufacturing, or engineering. Each segment of the code may represent different attributes such as version, type, or configuration.
For a precise introduction, consider consulting relevant technical documentation, product manuals, or industry resources associated with the brand or category it pertains to. This information can typically be obtained from the manufacturer's website or through direct inquiry with their customer support.
If this is a part number or model code, it likely denotes a specific item within a larger series or family of products, possibly in the fields of electronics, manufacturing, or engineering. Each segment of the code may represent different attributes such as version, type, or configuration.
For a precise introduction, consider consulting relevant technical documentation, product manuals, or industry resources associated with the brand or category it pertains to. This information can typically be obtained from the manufacturer's website or through direct inquiry with their customer support.
Features
The VNN7NV04PTR-E is a power MOSFET known for its compact design and efficient performance. This device is primarily used in automotive applications and high-speed switching environments due to its robust features. Key features include:
1. N-Channel MOSFET: It is an N-channel enhancement mode field-effect transistor, which allows for efficient power management.
2. Low On-Resistance: The MOSFET is designed to have a low on-resistance, minimizing energy loss and heat generation during operation.
3. High-Speed Switching: It supports fast switching, making it suitable for applications requiring quick response times.
4. Automotive Grade: The VNN7NV04PTR-E is built to meet automotive quality standards, ensuring reliability and durability in automotive applications.
5. Protection Features: It typically includes built-in protection mechanisms such as overvoltage, overtemperature, and ESD protection, enhancing its robustness in various environments.
6. Compact Package: The device is available in a compact package, optimizing space in circuit designs.
These features make the VNN7NV04PTR-E a versatile component for efficient power management in demanding applications.
1. N-Channel MOSFET: It is an N-channel enhancement mode field-effect transistor, which allows for efficient power management.
2. Low On-Resistance: The MOSFET is designed to have a low on-resistance, minimizing energy loss and heat generation during operation.
3. High-Speed Switching: It supports fast switching, making it suitable for applications requiring quick response times.
4. Automotive Grade: The VNN7NV04PTR-E is built to meet automotive quality standards, ensuring reliability and durability in automotive applications.
5. Protection Features: It typically includes built-in protection mechanisms such as overvoltage, overtemperature, and ESD protection, enhancing its robustness in various environments.
6. Compact Package: The device is available in a compact package, optimizing space in circuit designs.
These features make the VNN7NV04PTR-E a versatile component for efficient power management in demanding applications.
Package
The VNN7NV04PTR-E is a specific model number typically associated with a MOSFET transistor. The "PTR-E" part of the model often indicates the packaging type, which in this case is a reel (tape and reel) package used for automated manufacturing processes. For exact specifications, consult the manufacturer's datasheet.
Pinout
The VNN7NV04PTR-E is a Power MOSFET manufactured by STMicroelectronics. It is part of the VIPower M0-7 family and is designed for automotive and industrial applications. The MOSFET typically comes in a DPAK (TO-252) package, which features 3 pins.
The primary function of the VNN7NV04PTR-E is to act as a switch or amplifier in electronic circuits. It is an N-channel MOSFET, which means it uses electron flow to conduct electricity. The device is optimized for low on-state resistance and fast switching, making it suitable for high-efficiency power management in various applications. The typical configuration for the pins includes:
1. Source (S): Connected to the ground or negative voltage in the circuit.
2. Gate (G): Controls the MOSFET's conduction state; applying a voltage here turns the MOSFET on or off.
3. Drain (D): Connected to the load; current flows from the drain to the source when the MOSFET is on.
The VNN7NV04PTR-E is commonly used in automotive systems, DC-DC converters, and other power management systems requiring efficient and reliable switching performance.
The primary function of the VNN7NV04PTR-E is to act as a switch or amplifier in electronic circuits. It is an N-channel MOSFET, which means it uses electron flow to conduct electricity. The device is optimized for low on-state resistance and fast switching, making it suitable for high-efficiency power management in various applications. The typical configuration for the pins includes:
1. Source (S): Connected to the ground or negative voltage in the circuit.
2. Gate (G): Controls the MOSFET's conduction state; applying a voltage here turns the MOSFET on or off.
3. Drain (D): Connected to the load; current flows from the drain to the source when the MOSFET is on.
The VNN7NV04PTR-E is commonly used in automotive systems, DC-DC converters, and other power management systems requiring efficient and reliable switching performance.
Manufacturer
The VNN7NV04PTR-E is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. The company focuses on various market segments, including automotive, industrial, personal electronics, and communication equipment. They are known for their innovative technologies in areas such as microcontrollers, sensors, power management, and analog components. With a strong emphasis on research and development, STMicroelectronics plays a significant role in advancing technologies for smart devices and applications across different industries.
Application
The VNN7NV04PTR-E is a power MOSFET typically used in various applications such as DC-DC converters, power management systems, motor control, battery-powered devices, and load switching. It is commonly employed in consumer electronics, automotive systems, and industrial equipment due to its efficiency and reliability in handling high-speed switching and power regulation tasks.
Equivalent
The VNN7NV04PTR-E is an N-channel MOSFET commonly used for switching applications. Equivalent products typically include MOSFETs with similar voltage, current, and package specifications. Potential equivalents include:
1. STMicroelectronics VNN7NV04
2. Vishay Siliconix Si4446DY
3. ON Semiconductor NTD4906N-1G
4. Fairchild Semiconductor FDD6685
Ensure to verify the specifications like V_ds, I_d, R_ds(on), and packaging to confirm compatibility.
1. STMicroelectronics VNN7NV04
2. Vishay Siliconix Si4446DY
3. ON Semiconductor NTD4906N-1G
4. Fairchild Semiconductor FDD6685
Ensure to verify the specifications like V_ds, I_d, R_ds(on), and packaging to confirm compatibility.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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