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VNL5090N3TR-E
IC PWR DRIVER N-CHAN 1:1 SOT223
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- Mfr。パート #VNL5090N3TR-E
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- データシート VNL5090N3TR-E DataSheet
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仕様
| Series | OMNIFET III™, VIPower™ |
| Part Status | Active |
| Switch Type | General Purpose |
| Number of Outputs | 1 |
| Ratio - Input:Output | 1:1 |
| Output Configuration | Low Side |
| Output Type | N-Channel |
| Interface | On/Off |
| Voltage - Load | 36V (Max) |
| Current - Output (Max) | 13A |
| Rds On (Typ) | 90mOhm (Max) |
| Input Type | Non-Inverting |
| Features | Auto Restart |
| Fault Protection | Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | VNL5090 |
概要
Description
The VNL5090N3TR-E is a high-performance N-channel MOSFET designed for applications requiring efficient power switching. With a voltage rating of 90V and a continuous drain current capability of 50A, it is suitable for various power management tasks in industrial and consumer electronics. Its low on-resistance (RDS(on)) minimizes conduction losses, enhancing energy efficiency.
This MOSFET features a TO-220 package that allows for effective heat dissipation, making it ideal for high-power applications such as motor control, power supplies, and automotive systems. The VNL5090N3TR-E is also characterized by high speed and reliability, with a fast switching capability that supports high-frequency operations.
Key specifications include a maximum gate-source voltage of ±20V and a thermal resistance junction-to-case (RθJC) that ensures optimal performance under load. Its integration into designs can lead to improved overall system efficiency and thermal management. Overall, the VNL5090N3TR-E is a robust choice for designers looking to optimize power efficiency in demanding applications.
This MOSFET features a TO-220 package that allows for effective heat dissipation, making it ideal for high-power applications such as motor control, power supplies, and automotive systems. The VNL5090N3TR-E is also characterized by high speed and reliability, with a fast switching capability that supports high-frequency operations.
Key specifications include a maximum gate-source voltage of ±20V and a thermal resistance junction-to-case (RθJC) that ensures optimal performance under load. Its integration into designs can lead to improved overall system efficiency and thermal management. Overall, the VNL5090N3TR-E is a robust choice for designers looking to optimize power efficiency in demanding applications.
Features
The VNL5090N3TR-E is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 90V, making it suitable for various high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is up to 50A at a specified temperature, allowing it to manage significant loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)), typically around 10 mΩ, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be easily driven by standard logic levels.
5. Package: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device features fast switching capabilities, making it suitable for applications in power management, converters, and motor control.
Overall, the VNL5090N3TR-E is an efficient and robust MOSFET for demanding electronic applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 90V, making it suitable for various high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is up to 50A at a specified temperature, allowing it to manage significant loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)), typically around 10 mΩ, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be easily driven by standard logic levels.
5. Package: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device features fast switching capabilities, making it suitable for applications in power management, converters, and motor control.
Overall, the VNL5090N3TR-E is an efficient and robust MOSFET for demanding electronic applications.
Package
The VNL5090N3TR-E is packaged in a TO-220 form factor, which is a standard package type for power transistors, providing good heat dissipation and ease of mounting on heatsinks.
Pinout
The VNL5090N3TR-E is a N-channel MOSFET with a total of 8 pins. Its pin configuration is typically as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out when the MOSFET is on.
3. Source (S) - The terminal where current enters the MOSFET when it is on.
4. Source (S) - Same as above; often connected to ground in low-side switching applications.
5-8. Additional Pins - These may include other gate or source connections for packaging variations or thermal pads, depending on the specific layout.
The VNL5090N3TR-E is designed for low-voltage applications, offering features such as low on-resistance and high-speed switching. It is often used in power management, motor control, and other switching applications. Always refer to the specific datasheet for detailed specifications and pin assignments.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out when the MOSFET is on.
3. Source (S) - The terminal where current enters the MOSFET when it is on.
4. Source (S) - Same as above; often connected to ground in low-side switching applications.
5-8. Additional Pins - These may include other gate or source connections for packaging variations or thermal pads, depending on the specific layout.
The VNL5090N3TR-E is designed for low-voltage applications, offering features such as low on-resistance and high-speed switching. It is often used in power management, motor control, and other switching applications. Always refer to the specific datasheet for detailed specifications and pin assignments.
Manufacturer
The manufacturer of the VNL5090N3TR-E is ON Semiconductor. ON Semiconductor is an American semiconductor supplier that specializes in a wide range of products, including discrete semiconductors, analog ICs, and power management solutions. The company focuses on providing innovative technology and design solutions for various applications, including automotive, industrial, telecommunications, and consumer electronics. ON Semiconductor is known for its commitment to sustainability and energy efficiency in its product offerings.
Application
The VNL5090N3TR-E is a N-channel MOSFET primarily used in automotive and industrial applications. Its high voltage and current handling capabilities make it suitable for power management, motor control, and switching applications. Common areas include power supply circuits, LED drivers, and battery management systems, where efficiency and thermal performance are critical.
Equivalent
The VNL5090N3TR-E chip is a high-side load switch typically used for power management. Equivalent products include the SI8233, TPS22918, and BSS84. Always verify specifications like voltage ratings, current capacity, and package type for compatibility in your specific application.
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