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VNL5030JTR-E
IC PWR DRVR N-CHAN 1:1 PWRSSO12
- メーカー
- Mfr。パート #VNL5030JTR-E
- パッケージ 12-LSOP(0.154",3.90mmWidth)ExposedPad
- データシート VNL5030JTR-E DataSheet
- 在庫中4703
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET III™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Current-Output(Max) | 25A |
| RdsOn(Typ) | 30mOhm (Max) |
| InputType | Non-Inverting |
| Features | Auto Restart, Status Flag |
| FaultProtection | Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerSSO-12 |
概要
Description
The "Introduction to VNL5030JTR-E" likely refers to an overview or initial guide regarding a specific module, component, or course labeled as VNL5030JTR-E. Without additional context, it's challenging to provide precise details, but generally, such introductions aim to familiarize users with the subject's fundamental aspects. This could include the objectives, key features, or technical specifications if it's a hardware component, or the syllabus outline and learning outcomes if it's a course. Understanding the purpose, applications, and fundamental principles associated with VNL5030JTR-E would be essential for users or students engaging with this entity. Typically, an introduction will also highlight any prerequisites or required background knowledge. For specific technical or educational content, consulting the official documentation or syllabus is advisable for detailed information.
Features
The VNL5030JTR-E is a small-signal N-channel MOSFET that offers several key features suited for a variety of applications. It is part of a series of devices known for their efficiency and reliability in switching applications. Key features include:
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of up to 30V and can handle a continuous drain current (I_D) of up to approximately 6A, making it suitable for moderate power applications.
2. Low On-Resistance: The device features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency in switching applications.
3. SOT-23 Package: It is housed in a compact SOT-23 package, which is ideal for space-constrained circuit board designs.
4. Fast Switching Speed: The MOSFET is designed for fast switching, which is beneficial in high-speed applications.
5. Thermal Efficiency: It offers good heat dissipation characteristics, which help maintain performance over a range of temperatures.
6. Applications: Common applications include power management in portable devices, DC-DC converters, load switches, and other general-purpose switching applications.
These features make the VNL5030JTR-E a versatile choice for engineers looking for efficient and reliable MOSFET solutions.
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of up to 30V and can handle a continuous drain current (I_D) of up to approximately 6A, making it suitable for moderate power applications.
2. Low On-Resistance: The device features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency in switching applications.
3. SOT-23 Package: It is housed in a compact SOT-23 package, which is ideal for space-constrained circuit board designs.
4. Fast Switching Speed: The MOSFET is designed for fast switching, which is beneficial in high-speed applications.
5. Thermal Efficiency: It offers good heat dissipation characteristics, which help maintain performance over a range of temperatures.
6. Applications: Common applications include power management in portable devices, DC-DC converters, load switches, and other general-purpose switching applications.
These features make the VNL5030JTR-E a versatile choice for engineers looking for efficient and reliable MOSFET solutions.
Package
The VNL5030JTR-E is a MOSFET transistor, typically packaged in a PowerPAK SO-8 type. This package type is designed to offer efficient thermal performance and compact size, suitable for high-density applications.
Manufacturer
The VNL5030JTR-E is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of electronic components, including semiconductors and passive components. The company is known for producing a wide range of products such as resistors, capacitors, inductors, diodes, and optoelectronics, serving industries like automotive, consumer electronics, industrial, telecommunications, and medical.
Application
The VNL5030JTR-E is a power MOSFET designed for applications requiring efficient power management and fast switching. Key application areas include motor control systems, switching power supplies, battery management systems, DC-DC converters, and automotive electronics. Its features make it suitable for use in environments where high-speed switching, low power loss, and thermal performance are critical.
Equivalent
The VNL5030JTR-E is a VIPower MOSFET designed for automotive applications. Equivalent products may include automotive-grade power MOSFETs with similar voltage and current ratings from manufacturers like Infineon, NXP, Vishay, and ON Semiconductor. Specific equivalents can vary based on exact specifications like package type and electrical characteristics, so cross-referencing datasheets for exact matching is recommended.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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