VNB35N07-E

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VNB35N07-E

IC PWR DRIVER N-CHAN 1:1 D2PAK

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仕様

Package Tube
Series OMNIFET™, VIPower™
ProductStatus Obsolete
SwitchType General Purpose
NumberofOutputs 1
Ratio-Input:Output 1:1
OutputConfiguration Low Side
OutputType N-Channel
Interface On/Off
Voltage-Load 55V (Max)
Voltage-Supply(Vcc/Vdd) Not Required
Current-Output(Max) 25A
RdsOn(Typ) 28mOhm (Max)
InputType Non-Inverting
Features Status Flag
FaultProtection Current Limiting (Fixed), Over Temperature, Over Voltage
MountingType Surface Mount
SupplierDevicePackage D2PAK

概要

Description

The VNB35N07-E is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by STMicroelectronics. This device is primarily used for switching applications and load management in automotive and industrial environments. It features a low on-state resistance, allowing it to handle high currents with minimal power loss.
Key characteristics of the VNB35N07-E include:
1. Maximum Ratings: It typically supports a drain-source voltage (V_DS) of up to 70V and can handle continuous drain currents of around 35A, making it suitable for high-power applications.
2. Rugged Design: The MOSFET is designed to withstand high energy in avalanche mode and has a robust body diode, enhancing its reliability under harsh conditions.
3. Thermal Management: The device is usually housed in a package that facilitates effective heat dissipation, crucial for maintaining performance and longevity.
4. Applications: This MOSFET is commonly used in automotive electronic systems, motor drives, power management systems, and other applications requiring efficient high-current switching.
Overall, the VNB35N07-E is valued for its efficiency, reliability, and suitability for demanding electrical environments.

Features

The VNB35N07-E is a high-performance automotive-grade power MOSFET. Here are its key features:
1. N-channel MOSFET: This device is designed as an N-channel MOSFET, which provides efficient high-speed switching.
2. Built-in Protections: It features built-in protections against over-temperature, over-current, and over-voltage, enhancing reliability and safety.
3. On-Resistance (RDS(ON)): It offers a low on-resistance, typically around 35 milliohms, which reduces power loss and improves efficiency.
4. Package Type: The VNB35N07-E comes in a TO-220 package, which is commonly used for power applications because of its effective heat dissipation capabilities.
5. Voltage and Current Ratings: It is designed to handle a maximum drain-source voltage of 70V and a continuous drain current up to 35A.
6. Automotive Applications: Ideal for automotive applications due to its durability and compliance with automotive standards.
7. Thermal Performance: The device provides excellent thermal performance, essential for high-power applications.
These features make the VNB35N07-E suitable for robust power management and switching applications in the automotive sector and other high-reliability environments.

Package

The VNB35N07-E is a power MOSFET typically packaged in a TO-220 package. This is a common package type used for discrete semiconductors, designed to handle higher power and current levels, and provides efficient heat dissipation with its metal tab for mounting to a heatsink.

Pinout

The VNB35N07-E is a fully integrated IPower MOSFET from STMicroelectronics, specifically designed for automotive applications. It features a robust design suited for high-current operations. The device comes in a package with a total pin count of 5.
Pin Functions:
1. Input (IN) - This pin is used to control the gate of the internal MOSFET. By applying voltage to this pin, you can turn the MOSFET on or off.
2. Ground (GND) - This pin is connected to the ground or negative terminal of the power supply, providing a reference point for the circuit.
3. Source (S) - The source pin is connected to the load's return path or ground in most applications.
4. Drain (D) - This pin is connected to the positive side of the load. It is the main current-carrying terminal of the MOSFET.
5. VCC - Provides the necessary operating voltage for the internal circuitry of the device.
The VNB35N07-E is well-suited for driving high-current loads in automotive applications, offering thermal and electrical protection features.

Manufacturer

The VNB35N07-E is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. The company is known for designing and producing a wide range of semiconductor products, including microcontrollers, sensors, power management components, and more, which are used in various industries like automotive, industrial, personal electronics, and communications.

Application

The VNB35N07-E is a power MOSFET designed for automotive and industrial applications. Its primary application areas include load switching and motor control due to its high efficiency and reliability. It is commonly used in automotive electronic control units (ECUs) for managing power distribution to various systems, such as lighting, heating, and power windows. Additionally, it can be employed in industrial automation systems for driving motors, solenoids, and relay controls. Its robust design and low on-resistance make it suitable for high-current and high-temperature environments.

Equivalent

The VNB35N07-E is an automotive-grade N-channel MOSFET. Equivalent products with similar specifications include the STMicroelectronics VNB35N07 and NXP's BUK9507-55A. Always verify pin configurations, package types, and electrical characteristics with the datasheets to ensure compatibility for your specific application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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