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VNB10N07
IC PWR DRIVER N-CHAN 1:1 D2PAK
- メーカー
- Mfr。パート #VNB10N07
- パッケージ TO-263-3
- データシート VNB10N07 DataSheet
- 在庫中6405
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仕様
| Package | Tube |
| Series | OMNIFET™, VIPower™ |
| ProductStatus | Obsolete |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 55V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 14A |
| RdsOn(Typ) | 100mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The VNB10N07 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It typically features low on-resistance and can handle significant current, making it suitable for power management applications. The VNB10N07 is designed to operate efficiently with a gate-source voltage and can handle a maximum drain-source voltage of about 70 volts. It is often utilized in automotive, industrial, and consumer electronics due to its robust performance and reliability. The transistor's package type usually allows for efficient heat dissipation, which is essential for maintaining performance under high load conditions. Its applications range from motor control to power supply regulation, showcasing its versatility in various electronic designs.
Features
The VNB10N07 is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications for switching and amplification purposes. Key features of the VNB10N07 include:
1. N-Channel Type: Enables efficient switching and control in electronic circuits.
2. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of approximately 70V.
3. Current Rating: It typically supports a continuous drain current (I_D) of around 10A.
4. Low On-Resistance: The device usually offers a low R_DS(on), which reduces power loss and increases efficiency.
5. High-Speed Switching: Facilitates rapid switching, making it suitable for high-frequency applications.
6. Thermal Performance: Often designed with good thermal characteristics for better heat dissipation.
7. Robust Design: Provides protection features such as avalanche energy capability.
These features make the VNB10N07 suitable for applications in power management, motor control, and other high-efficiency switching applications. Always refer to the manufacturer's datasheet for detailed specifications and operating conditions.
1. N-Channel Type: Enables efficient switching and control in electronic circuits.
2. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of approximately 70V.
3. Current Rating: It typically supports a continuous drain current (I_D) of around 10A.
4. Low On-Resistance: The device usually offers a low R_DS(on), which reduces power loss and increases efficiency.
5. High-Speed Switching: Facilitates rapid switching, making it suitable for high-frequency applications.
6. Thermal Performance: Often designed with good thermal characteristics for better heat dissipation.
7. Robust Design: Provides protection features such as avalanche energy capability.
These features make the VNB10N07 suitable for applications in power management, motor control, and other high-efficiency switching applications. Always refer to the manufacturer's datasheet for detailed specifications and operating conditions.
Package
The VNB10N07 is a power MOSFET typically packaged in a TO-263 (also known as D2PAK) package. This package is designed for surface mounting and is commonly used in high-power applications due to its good thermal performance and low on-resistance.
Pinout
The VNB10N07 is a power MOSFET with a DPAK package. It typically has three pins plus a tab, which is used for additional connectivity and heat dissipation. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here enables the conduction between the source and drain.
2. Drain (D): This pin is the output for the current, where the load is connected. In the DPAK package, the tab is also connected to the drain to help dissipate heat.
3. Source (S): The source is the return path for the current to the MOSFET. It is typically connected to ground in many applications.
The VNB10N07 is used in applications requiring efficient power switching, like automotive or industrial circuits. It is specifically suitable for low-voltage, high-current scenarios.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here enables the conduction between the source and drain.
2. Drain (D): This pin is the output for the current, where the load is connected. In the DPAK package, the tab is also connected to the drain to help dissipate heat.
3. Source (S): The source is the return path for the current to the MOSFET. It is typically connected to ground in many applications.
The VNB10N07 is used in applications requiring efficient power switching, like automotive or industrial circuits. It is specifically suitable for low-voltage, high-current scenarios.
Manufacturer
The VNB10N07 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor company headquartered in Geneva, Switzerland. It is one of the world's leading semiconductor companies, known for designing and manufacturing a wide range of semiconductor products, including integrated circuits and discrete devices used in various applications such as automotive, industrial, personal electronics, and communications.
Application
The VNB10N07 is a power MOSFET commonly used in applications like automotive electronics, power management systems, and motor control. Its features make it suitable for use in high-power switching devices, DC-DC converters, and load switching applications. The device is often employed in systems requiring efficient energy management, such as engine control units or battery-powered devices, due to its low on-resistance and high current handling capabilities.
Equivalent
The VNB10N07 is a smart power switch used in automotive and industrial applications. Equivalent products include:
1. BTS426L1 - Infineon
2. VNQ660SP - STMicroelectronics
3. BTS540 - Infineon
These equivalents may vary in specific features, so always check the datasheet to ensure compatibility with your application.
1. BTS426L1 - Infineon
2. VNQ660SP - STMicroelectronics
3. BTS540 - Infineon
These equivalents may vary in specific features, so always check the datasheet to ensure compatibility with your application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
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