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UCC5320ECDR
DGTL ISO 3KV 1CH GATE DVR 8SOIC
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- Mfr。パート #UCC5320ECDR
- パッケージ
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- 在庫中14657
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仕様
| Part Status | Active |
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 3000Vrms |
| Common Mode Transient Immunity (Min) | 100kV/µs |
| Propagation Delay tpLH / tpHL (Max) | 72ns, 75ns |
| Pulse Width Distortion (Max) | 20ns |
| Rise / Fall Time (Typ) | 12ns, 10ns |
| Current - Output High, Low | 2.4A, 2.2A |
| Current - Peak Output | 4.3A |
| Voltage - Output Supply | 13.2V ~ 33V |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Approval Agency | CQC, CSA, UR, VDE |
| Base Product Number | UCC5320 |
概要
Description
The UCC5320ECDR is a high-speed, dual-channel gate driver designed for driving power MOSFETs and IGBTs in various applications, including DC-DC converters, motor drives, and power inverters. It features a wide supply voltage range, typically from 4.5V to 15V, and is capable of driving output currents of up to 2A, making it suitable for fast switching applications.
Key features include robust isolation, low propagation delay, and high peak output current, ensuring efficient and accurate switching performance. The UCC5320ECDR incorporates built-in protection mechanisms, such as under-voltage lockout (UVLO) and thermal shutdown, enhancing reliability in demanding environments. The device supports both inverting and non-inverting inputs, providing flexibility in circuit design.
Packaged in a compact HTQFP-32 format, it is ideal for space-constrained applications. Overall, the UCC5320ECDR is a reliable choice for engineers seeking efficient gate driving solutions in high-performance power electronics.
Key features include robust isolation, low propagation delay, and high peak output current, ensuring efficient and accurate switching performance. The UCC5320ECDR incorporates built-in protection mechanisms, such as under-voltage lockout (UVLO) and thermal shutdown, enhancing reliability in demanding environments. The device supports both inverting and non-inverting inputs, providing flexibility in circuit design.
Packaged in a compact HTQFP-32 format, it is ideal for space-constrained applications. Overall, the UCC5320ECDR is a reliable choice for engineers seeking efficient gate driving solutions in high-performance power electronics.
Features
The UCC5320ECDR is a high-speed gate driver designed for driving power MOSFETs and IGBTs in half-bridge configurations. Key features include:
1. High Drive Current: Capable of sourcing and sinking up to 2A, enabling fast switching and reducing transition losses.
2. Wide Supply Voltage Range: Operates from 4.5V to 20V, making it suitable for various applications.
3. Low Propagation Delay: Offers a propagation delay of around 30ns, allowing for efficient high-frequency operation.
4. Integrated Bootstrap Circuit: Supports high-side driving without the need for external components, simplifying design.
5. Fault Protection: Includes features like under-voltage lockout (UVLO) to prevent operation below safe voltage levels.
6. Thermal Shutdown: Protects the driver from overheating.
7. Propagation Delay Matching: Ensures precise timing between high-side and low-side gate drive signals.
8. Small Package: Available in a compact SOIC-8 package for space-constrained applications.
These features make the UCC5320ECDR suitable for applications in motor control, power inverters, and other high-efficiency power management systems.
1. High Drive Current: Capable of sourcing and sinking up to 2A, enabling fast switching and reducing transition losses.
2. Wide Supply Voltage Range: Operates from 4.5V to 20V, making it suitable for various applications.
3. Low Propagation Delay: Offers a propagation delay of around 30ns, allowing for efficient high-frequency operation.
4. Integrated Bootstrap Circuit: Supports high-side driving without the need for external components, simplifying design.
5. Fault Protection: Includes features like under-voltage lockout (UVLO) to prevent operation below safe voltage levels.
6. Thermal Shutdown: Protects the driver from overheating.
7. Propagation Delay Matching: Ensures precise timing between high-side and low-side gate drive signals.
8. Small Package: Available in a compact SOIC-8 package for space-constrained applications.
These features make the UCC5320ECDR suitable for applications in motor control, power inverters, and other high-efficiency power management systems.
Package
The UCC5320ECDR is packaged in a 16-pin TSSOP (Thin Shrink Small Outline Package) form factor.
Pinout
The UCC5320ECDR is a high-speed, dual-channel gate driver IC from Texas Instruments. It features a 16-pin QFN package.
Pin Count: 16 pins
Function: The UCC5320ECDR is designed to drive high- and low-side MOSFETs or IGBTs in power conversion applications. It supports a wide supply voltage range, fast switching speeds, and provides high drive current capability. Key features include:
- Two independent channels for driving separate devices.
- High output current capability (up to ±4 A) for rapid switching.
- Level shifting for driving high-side devices.
- Built-in protection features such as under-voltage lockout (UVLO).
- Adjustable gate drive timing with configurable delay settings.
This makes it suitable for applications like DC-DC converters, inverter circuits, and motor drives.
Pin Count: 16 pins
Function: The UCC5320ECDR is designed to drive high- and low-side MOSFETs or IGBTs in power conversion applications. It supports a wide supply voltage range, fast switching speeds, and provides high drive current capability. Key features include:
- Two independent channels for driving separate devices.
- High output current capability (up to ±4 A) for rapid switching.
- Level shifting for driving high-side devices.
- Built-in protection features such as under-voltage lockout (UVLO).
- Adjustable gate drive timing with configurable delay settings.
This makes it suitable for applications like DC-DC converters, inverter circuits, and motor drives.
Manufacturer
The UCC5320ECDR is manufactured by Texas Instruments (TI), a global semiconductor company. Texas Instruments designs and produces a wide range of analog and embedded processing products, including power management solutions, microcontrollers, and digital signal processors. Founded in 1930 and headquartered in Dallas, Texas, TI serves various industries including automotive, industrial, communications, and consumer electronics. The UCC5320ECDR specifically is a high-speed, dual-channel gate driver used for driving power MOSFETs and IGBTs in various applications, particularly in motor drives and power inverters. TI is known for its innovation in technology and commitment to high-quality manufacturing.
Application
The UCC5320ECDR is a high-speed gate driver used in various applications, including power converters, motor drives, and industrial power supplies. It supports high-frequency switching for MOSFETs and IGBTs, enabling efficient power management in renewable energy systems, electric vehicles, and uninterruptible power supplies (UPS). Its robust design enhances performance in harsh environments, making it suitable for automotive and aerospace applications as well.
Equivalent
The UCC5320ECDR is a high-speed gate driver. Equivalent products include the MIC4426, MAX4421, and TC4420. These alternatives provide similar functionalities for driving MOSFETs or IGBTs in power applications. Always check specific parameters like voltage, current ratings, and switching speeds for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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