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TK31N60W
MOSFETs
- メーカー
- Mfr。パート #TK31N60W
- パッケージ
- データシート
- 在庫中13036
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
概要
Description
The TK31N60W is a high-voltage, N-channel MOSFET designed for power applications. With a rated voltage of 600V and a continuous drain current of up to 31A, it is suitable for various tasks, including switching and amplification in power supplies, motor drives, and other electronic circuits. The device features low on-resistance, which enhances efficiency by minimizing power loss during operation. Additionally, its fast switching capabilities make it ideal for high-frequency applications.
The MOSFET is packaged in a TO-220 casing, which facilitates effective heat dissipation and easy mounting on heat sinks. The TK31N60W is notable for its robust construction, ensuring reliability in demanding environments. It is commonly used in applications such as DC-DC converters, inverters, and other systems requiring high voltage handling. Understanding the characteristics and proper usage of the TK31N60W can significantly enhance circuit design and performance in high-power electronic applications.
The MOSFET is packaged in a TO-220 casing, which facilitates effective heat dissipation and easy mounting on heat sinks. The TK31N60W is notable for its robust construction, ensuring reliability in demanding environments. It is commonly used in applications such as DC-DC converters, inverters, and other systems requiring high voltage handling. Understanding the characteristics and proper usage of the TK31N60W can significantly enhance circuit design and performance in high-power electronic applications.
Features
The TK31N60W is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: It supports a continuous drain current (I_D) of up to 31A, allowing for substantial power handling.
3. R_DS(on): It has a low on-resistance, typically around 0.31 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2-4V, enabling compatibility with various gate drive circuits.
5. Fast Switching: Designed for fast switching applications, it contributes to improved efficiency in power conversion.
6. Package Type: Usually comes in a TO-220 package, facilitating heat dissipation and ease of mounting.
7. Applications: Commonly used in switch-mode power supplies, motor drives, and other high-frequency applications.
These features make the TK31N60W a reliable choice for power management in demanding environments.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: It supports a continuous drain current (I_D) of up to 31A, allowing for substantial power handling.
3. R_DS(on): It has a low on-resistance, typically around 0.31 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2-4V, enabling compatibility with various gate drive circuits.
5. Fast Switching: Designed for fast switching applications, it contributes to improved efficiency in power conversion.
6. Package Type: Usually comes in a TO-220 package, facilitating heat dissipation and ease of mounting.
7. Applications: Commonly used in switch-mode power supplies, motor drives, and other high-frequency applications.
These features make the TK31N60W a reliable choice for power management in demanding environments.
Package
The TK31N60W is typically packaged in a TO-220 case. This package type is commonly used for power devices due to its effective thermal dissipation and ease of mounting on heatsinks.
Pinout
The TK31N60W is a high-voltage N-channel MOSFET typically used in power applications. It features a 3-pin configuration. The pin assignments are as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching state. A voltage applied here turns the MOSFET on or off.
2. Drain (D) - The drain pin is where the load is connected. It carries the current flowing from the drain to the source when the MOSFET is turned on.
3. Source (S) - The source pin is connected to the ground or the lower potential side of the circuit. It completes the circuit when the MOSFET is conducting.
The TK31N60W is rated for a maximum drain-source voltage (V_DS) of 600V and has a continuous drain current (I_D) rating, making it suitable for high-voltage applications such as power supplies and motor drives.
1. Gate (G) - This pin is used to control the MOSFET's switching state. A voltage applied here turns the MOSFET on or off.
2. Drain (D) - The drain pin is where the load is connected. It carries the current flowing from the drain to the source when the MOSFET is turned on.
3. Source (S) - The source pin is connected to the ground or the lower potential side of the circuit. It completes the circuit when the MOSFET is conducting.
The TK31N60W is rated for a maximum drain-source voltage (V_DS) of 600V and has a continuous drain current (I_D) rating, making it suitable for high-voltage applications such as power supplies and motor drives.
Manufacturer
The TK31N60W is manufactured by Toshiba, a multinational corporation based in Japan. Toshiba operates in various sectors, including electronics, electrical equipment, and information technology. The company is known for producing a wide range of products, including semiconductors, storage devices, and power systems. Toshiba is recognized for its innovation and development in technology, contributing significantly to the electronics industry. The TK31N60W is a power MOSFET used in various applications, including power management and energy-efficient devices.
Application
The TK31N60W is an N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies, motor control, DC-DC converters, and inverters for renewable energy systems. It is also utilized in lighting control, automotive applications, and various high-efficiency power management systems due to its high voltage and current handling capabilities.
Equivalent
The TK31N60W is a high-voltage N-channel MOSFET. Equivalent products include the STP31NM60, IRF730, and MPSU01. Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility for your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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