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TK100E10N1
MOSFETs High Speed, Low-Voltage N-CH MOSFET 100V
- メーカー
- Mfr。パート #TK100E10N1
- パッケージ
- データシート
- 在庫中3036
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
概要
Description
The TK100E10N1 is a type of transistor, specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for high-efficiency switching applications. It is commonly used in power management, DC-DC converters, and motor control circuits due to its low on-resistance and fast switching capabilities.
Key features typically include a high voltage rating, low gate threshold voltage, and enhanced thermal performance, making it suitable for a variety of electronic devices.
Applications may range from consumer electronics to industrial systems, where reliable and efficient power management is critical. When using the TK100E10N1, designers should consider parameters such as maximum drain-source voltage, continuous drain current, and power dissipation to ensure optimal performance in their specific applications.
For detailed specifications and application circuits, referring to the manufacturer's datasheet is recommended.
Key features typically include a high voltage rating, low gate threshold voltage, and enhanced thermal performance, making it suitable for a variety of electronic devices.
Applications may range from consumer electronics to industrial systems, where reliable and efficient power management is critical. When using the TK100E10N1, designers should consider parameters such as maximum drain-source voltage, continuous drain current, and power dissipation to ensure optimal performance in their specific applications.
For detailed specifications and application circuits, referring to the manufacturer's datasheet is recommended.
Features
The TK100E10N1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching and amplification applications. Key features include:
1. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) of 100V.
2. Continuous Drain Current: Can handle continuous drain currents up to 10A.
3. R_ds(on): Low on-resistance, often in the range of milliohms, enabling efficient operation and reduced power loss.
4. Fast Switching Speed: Suitable for high-frequency applications with quick switching capabilities.
5. Thermal Characteristics: Designed to operate at elevated temperatures, typically with a maximum junction temperature of around 150°C.
6. Package Type: Commonly available in TO-220 or similar packages, facilitating easy heat dissipation and mounting on PCBs.
7. Applications: Ideal for power management, motor control, and DC-DC converters.
These features make the TK100E10N1 suitable for various electronic applications requiring efficient power handling and switching performance.
1. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) of 100V.
2. Continuous Drain Current: Can handle continuous drain currents up to 10A.
3. R_ds(on): Low on-resistance, often in the range of milliohms, enabling efficient operation and reduced power loss.
4. Fast Switching Speed: Suitable for high-frequency applications with quick switching capabilities.
5. Thermal Characteristics: Designed to operate at elevated temperatures, typically with a maximum junction temperature of around 150°C.
6. Package Type: Commonly available in TO-220 or similar packages, facilitating easy heat dissipation and mounting on PCBs.
7. Applications: Ideal for power management, motor control, and DC-DC converters.
These features make the TK100E10N1 suitable for various electronic applications requiring efficient power handling and switching performance.
Package
The TK100E10N1 is typically packaged in a TO-220 or similar package type, which features a metal tab for heat dissipation and allows for efficient mounting on heatsinks. This packaging is commonly used for power devices, ensuring good thermal management and electrical performance.
Pinout
The TK100E10N1 is a type of N-channel MOSFET transistor with a pin count of 4. The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current exits when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
4. Body (B): Internally connected to the source; often not used directly in circuits.
This MOSFET is designed for high-efficiency switching applications and can handle a significant amount of power in various electronic circuits. Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current exits when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
4. Body (B): Internally connected to the source; often not used directly in circuits.
This MOSFET is designed for high-efficiency switching applications and can handle a significant amount of power in various electronic circuits. Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings.
Manufacturer
The TK100E10N1 is a product manufactured by Toshiba Electronic Devices & Storage Corporation. Toshiba is a multinational conglomerate based in Japan, primarily known for its diverse range of products, including electronics, semiconductor devices, and storage solutions. The company operates in various sectors, including information technology, consumer electronics, and infrastructure. Toshiba has a significant presence in the semiconductor industry, contributing to advancements in power management and electronic components. The TK100E10N1 itself is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), commonly used in power applications for efficient switching and amplification of electronic signals.
Application
The TK100E10N1 is a high-performance power MOSFET used primarily in applications such as power management, DC-DC converters, motor drives, and battery management systems. Its features make it suitable for automotive, industrial, and consumer electronics applications, where efficient switching and thermal performance are essential.
Equivalent
The TK100E10N1 is a silicon controlled rectifier (SCR) typically used in power applications. Equivalent products include the BTA10-400V, MCR100-10, and T106-800V. Always verify specifications like voltage ratings, current ratings, and package types when considering replacements.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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