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TGA2830-SM
2.7-3.5 GHZ, 18 W GAN PA
- メーカー
- Mfr。パート #TGA2830-SM
- パッケージ
- データシート
- 在庫中9209
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Active |
| Frequency | 2.7GHz ~ 3.5GHz |
| Gain | 30.5dB |
| RF Type | Radar |
| Voltage - Supply | 20V ~ 32V |
| Current - Supply | 175mA ~ 275mA |
| Test Frequency | 2.7GHz ~ 3.5GHz |
| Mounting Type | Surface Mount |
| Package / Case | 24-VQFN Exposed Pad |
| Supplier Device Package | 24-QFN (5x5) |
概要
Description
The TGA2830-SM is a high-power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) primarily used in RF and microwave applications. Designed for broadband performance, it typically operates within the frequency range of 2.7 to 3.5 GHz, making it suitable for various wireless communication systems, including radar and satellite communications.
This device features a balanced amplifier configuration, offering high power output, typically around 32 watts, and excellent efficiency. The GaN technology provides the TGA2830-SM with superior thermal and electrical performance, allowing for robust operation under demanding conditions. It is usually housed in a compact and surface-mount package, facilitating easy integration into RF systems.
Key characteristics include high efficiency, linearity, and a robust design capable of withstanding high voltage operations. These features make it a popular choice for applications requiring reliable and high-performance power amplification. The TGA2830-SM is also often preferred for its durability and ability to maintain performance across a wide temperature range, which is critical in many aerospace and defense applications.
This device features a balanced amplifier configuration, offering high power output, typically around 32 watts, and excellent efficiency. The GaN technology provides the TGA2830-SM with superior thermal and electrical performance, allowing for robust operation under demanding conditions. It is usually housed in a compact and surface-mount package, facilitating easy integration into RF systems.
Key characteristics include high efficiency, linearity, and a robust design capable of withstanding high voltage operations. These features make it a popular choice for applications requiring reliable and high-performance power amplification. The TGA2830-SM is also often preferred for its durability and ability to maintain performance across a wide temperature range, which is critical in many aerospace and defense applications.
Features
The TGA2830-SM is a high-performance gallium nitride (GaN) power amplifier designed for RF applications. Key features include:
1. Frequency Range: Operates typically in the range of 2.5 to 6.0 GHz, making it versatile for multiple communication applications.
2. Output Power: Provides high output power, often around 35 dBm (approximately 3.2 watts), ensuring robust signal amplification.
3. Efficiency: Offers high power-added efficiency (PAE), which is beneficial for reducing power consumption and heat generation.
4. Gain: Delivers substantial power gain, typically over 24 dB, enhancing input signal strength effectively.
5. Linearity: Maintains excellent linearity, which is crucial for minimizing distortion in amplified signals, especially in complex modulation schemes.
6. Compact Package: Available in a small surface-mount package, making it suitable for space-constrained designs.
7. Thermal Management: Features efficient thermal management, ensuring reliable performance under high-power conditions.
These features make the TGA2830-SM suitable for various high-frequency applications, including wireless infrastructure, radar systems, and satellite communications.
1. Frequency Range: Operates typically in the range of 2.5 to 6.0 GHz, making it versatile for multiple communication applications.
2. Output Power: Provides high output power, often around 35 dBm (approximately 3.2 watts), ensuring robust signal amplification.
3. Efficiency: Offers high power-added efficiency (PAE), which is beneficial for reducing power consumption and heat generation.
4. Gain: Delivers substantial power gain, typically over 24 dB, enhancing input signal strength effectively.
5. Linearity: Maintains excellent linearity, which is crucial for minimizing distortion in amplified signals, especially in complex modulation schemes.
6. Compact Package: Available in a small surface-mount package, making it suitable for space-constrained designs.
7. Thermal Management: Features efficient thermal management, ensuring reliable performance under high-power conditions.
These features make the TGA2830-SM suitable for various high-frequency applications, including wireless infrastructure, radar systems, and satellite communications.
Package
The TGA2830-SM is a GaN power amplifier that comes in a surface-mount package.
Pinout
The TGA2830-SM is a GaN power amplifier designed by Qorvo. It typically comes in a 32-lead 5 x 5 mm plastic overmold QFN package. The device is intended for use in radar, communication, and electronic warfare systems, operating primarily in the 2.7 to 3.5 GHz frequency range. It provides high power output and gain, making it suitable for demanding RF applications.
Key features include a high power-added efficiency, robust design for high reliability, and advanced thermal management capabilities. The TGA2830-SM is designed to handle high peak and average power levels, which is crucial for effective operation in its target applications.
For precise pin configurations and functions, refer to the manufacturer's datasheet, which details each pin's specific role, including RF input/output, DC biasing, and grounding, among others. This information is critical for integrating the device correctly into RF systems.
Key features include a high power-added efficiency, robust design for high reliability, and advanced thermal management capabilities. The TGA2830-SM is designed to handle high peak and average power levels, which is crucial for effective operation in its target applications.
For precise pin configurations and functions, refer to the manufacturer's datasheet, which details each pin's specific role, including RF input/output, DC biasing, and grounding, among others. This information is critical for integrating the device correctly into RF systems.
Manufacturer
The TGA2830-SM is manufactured by Qorvo, a company that specializes in the production of radio frequency (RF) solutions and semiconductor technologies. Qorvo is known for designing and manufacturing products used in mobile, infrastructure, aerospace, and defense applications. Their expertise lies in developing advanced wireless and connectivity technologies, providing solutions for 5G networks, Wi-Fi, and other communication systems.
Application
The TGA2830-SM is a high-power GaN MMIC amplifier commonly used in radar systems, satellite communications, and electronic warfare. It is suitable for applications requiring high efficiency and output power, such as C-band and X-band radar systems. Its robust performance in harsh environments makes it ideal for both commercial and military use.
Equivalent
The TGA2830-SM is a GaN power amplifier MMIC designed by Qorvo for applications in radar and other radio frequency systems. Equivalent products would be other GaN power amplifiers with similar frequency ranges and output powers. Some possible alternatives include the Analog Devices HMC7885, Cree (Wolfspeed) CMPA2735075F, and NXP's BLC2425M10LS250. It's essential to compare specifications like frequency range, gain, efficiency, and package to ensure suitability for specific applications.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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