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TC58NVG2S0HTAI0
IC FLASH 4GBIT PARALLEL 48TSOP I
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- Mfr。パート #TC58NVG2S0HTAI0
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仕様
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | TC58NVG2 |
| Access Time | 25 ns |
概要
Description
The TC58NVG2S0HTAI0 is a NAND Flash memory product manufactured by Toshiba (now Kioxia). It is designed for storage applications requiring non-volatile memory, meaning it retains data even when power is removed. This specific model is a single-level cell (SLC) NAND flash, which typically offers higher endurance and faster write speeds compared to multi-level cell (MLC) or triple-level cell (TLC) NAND flash.
Key features of the TC58NVG2S0HTAI0 include a high data retention capability, substantial read and write cycles, and compatibility with a variety of industrial and consumer applications such as solid-state drives (SSDs), USB drives, and embedded systems. Its architecture is optimized for efficient data storage and retrieval, making it suitable for applications requiring reliable performance over a long lifespan.
The package type and interface of the TC58NVG2S0HTAI0 are designed to integrate easily with existing hardware, ensuring seamless operation within different systems. Overall, it is a robust solution for applications demanding high-performance and durable flash memory.
Key features of the TC58NVG2S0HTAI0 include a high data retention capability, substantial read and write cycles, and compatibility with a variety of industrial and consumer applications such as solid-state drives (SSDs), USB drives, and embedded systems. Its architecture is optimized for efficient data storage and retrieval, making it suitable for applications requiring reliable performance over a long lifespan.
The package type and interface of the TC58NVG2S0HTAI0 are designed to integrate easily with existing hardware, ensuring seamless operation within different systems. Overall, it is a robust solution for applications demanding high-performance and durable flash memory.
Features
The TC58NVG2S0HTAI0 is a NAND Flash memory product from Toshiba/Western Digital. It is designed for use in a wide range of applications that require high-density storage. Key features typically include:
1. Type: Single-Level Cell (SLC) NAND Flash, offering better performance and reliability compared to Multi-Level Cell (MLC) NAND.
2. Density: Generally available in a 2 Gigabit (256 Megabyte) capacity.
3. Interface: Operates with a standard NAND interface, compatible with most NAND controllers.
4. Performance: SLC NAND is known for faster read and write speeds, and lower latency compared to MLC and TLC NAND types.
5. Endurance: Higher write/erase cycles, typically 100,000 cycles, making it suitable for applications with frequent data updates.
6. Data Retention: Offers long data retention periods, generally rated between 10-20 years.
7. Package: Available in a standard TSOP (Thin Small Outline Package) or similar, making it easy to integrate into various designs.
8. Applications: Ideal for industrial, automotive, and embedded systems that require reliable and high-performance memory solutions.
These characteristics make the TC58NVG2S0HTAI0 a reliable choice for demanding applications that require durable and efficient memory storage.
1. Type: Single-Level Cell (SLC) NAND Flash, offering better performance and reliability compared to Multi-Level Cell (MLC) NAND.
2. Density: Generally available in a 2 Gigabit (256 Megabyte) capacity.
3. Interface: Operates with a standard NAND interface, compatible with most NAND controllers.
4. Performance: SLC NAND is known for faster read and write speeds, and lower latency compared to MLC and TLC NAND types.
5. Endurance: Higher write/erase cycles, typically 100,000 cycles, making it suitable for applications with frequent data updates.
6. Data Retention: Offers long data retention periods, generally rated between 10-20 years.
7. Package: Available in a standard TSOP (Thin Small Outline Package) or similar, making it easy to integrate into various designs.
8. Applications: Ideal for industrial, automotive, and embedded systems that require reliable and high-performance memory solutions.
These characteristics make the TC58NVG2S0HTAI0 a reliable choice for demanding applications that require durable and efficient memory storage.
Package
The TC58NVG2S0HTAI0 is a NAND Flash memory chip from Toshiba (now Kioxia). It typically comes in a TSOP (Thin Small Outline Package) type, specifically a 48-pin TSOP1 package, which is designed for surface mounting on circuit boards.
Pinout
The TC58NVG2S0HTAI0 is a NAND Flash memory chip manufactured by Toshiba (now Kioxia). It typically comes in a 48-pin TSOP (Thin Small Outline Package). Here’s a concise breakdown of its pin functions:
1. I/O Pins (I/O0 to I/O7): 8 pins used for data input/output.
2. CLE (Command Latch Enable): Used for loading a command into the internal command register.
3. ALE (Address Latch Enable): Used for loading an address into the internal address register.
4. CE# (Chip Enable): Activates the chip when low.
5. WE# (Write Enable): Controls writing operations to the chip.
6. RE# (Read Enable): Controls reading operations from the chip.
7. WP# (Write Protect): Used to protect the memory from write operations when low.
8. R/B# (Ready/Busy): Outputs the device status; low indicates the chip is busy.
9. VCC: Power supply pin.
10. VSS: Ground pin.
This configuration is typical for NAND Flash memory chips, facilitating data storage and retrieval. Always refer to the datasheet for detailed specifications and pin functions.
1. I/O Pins (I/O0 to I/O7): 8 pins used for data input/output.
2. CLE (Command Latch Enable): Used for loading a command into the internal command register.
3. ALE (Address Latch Enable): Used for loading an address into the internal address register.
4. CE# (Chip Enable): Activates the chip when low.
5. WE# (Write Enable): Controls writing operations to the chip.
6. RE# (Read Enable): Controls reading operations from the chip.
7. WP# (Write Protect): Used to protect the memory from write operations when low.
8. R/B# (Ready/Busy): Outputs the device status; low indicates the chip is busy.
9. VCC: Power supply pin.
10. VSS: Ground pin.
This configuration is typical for NAND Flash memory chips, facilitating data storage and retrieval. Always refer to the datasheet for detailed specifications and pin functions.
Manufacturer
The TC58NVG2S0HTAI0 is manufactured by Kioxia Corporation. Kioxia is a Japanese company specializing in flash memory products and solid-state storage solutions. It was formerly a part of Toshiba Corporation but became an independent entity in 2019. Kioxia focuses on developing, manufacturing, and selling NAND flash memory and solid-state drives (SSDs) for various applications, including consumer electronics, data centers, and industrial systems. The company is recognized as a leader in the memory and storage industry.
Application
The TC58NVG2S0HTAI0 is a NAND flash memory chip commonly used in applications that require data storage and retrieval. Its typical application areas include consumer electronics such as digital cameras and smartphones, industrial devices, solid-state drives (SSDs), embedded systems, and other applications where reliable and efficient non-volatile memory is crucial. Its high-density storage capabilities make it suitable for use in systems that demand large data storage capacities.
Equivalent
The TC58NVG2S0HTAI0 is a NAND Flash memory chip produced by Kioxia. Equivalent products from other manufacturers might include Samsung's K9GAG08U0M, Micron's MT29F2G08ABAEA, and Hynix's H27UBG8T2ATR. These alternatives offer similar NAND flash memory capacities and functionalities but ensure to check specific datasheets for compatibility in terms of voltage, speed, and package type.
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