画像は参照用のみです。
SVF5N60F
- メーカー
- Mfr。パート #SVF5N60F
- パッケージ
- データシート SVF5N60F DataSheet
- 在庫中8059
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Continuous Drain(Id) | 5A |
| Drain to Source Voltage | 600V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Type | 1 N-channel |
| Input Capacitance(Ciss@Vds) | 479.8pF@25V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF@25V |
概要
Description
The SVF5N60F is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It is part of the silicon-based MOSFET family and is capable of handling a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) of 5 amps. The device features a low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency in circuits.
Common applications include power supplies, motor drivers, and switching circuits in various electronic devices. The SVF5N60F is typically packaged in a TO-220 format, allowing for effective heat dissipation and easy integration into PCB designs. Its reliability and performance make it suitable for both industrial and consumer applications requiring robust high-voltage performance.
Common applications include power supplies, motor drivers, and switching circuits in various electronic devices. The SVF5N60F is typically packaged in a TO-220 format, allowing for effective heat dissipation and easy integration into PCB designs. Its reliability and performance make it suitable for both industrial and consumer applications requiring robust high-voltage performance.
Features
The SVF5N60F is a high-voltage N-channel MOSFET designed for various power electronics applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 5A, which allows it to handle substantial load currents.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 0.85 ohms, ensuring efficient power conversion with reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Fast Switching: Designed for fast switching speeds, it is ideal for applications like switch-mode power supplies (SMPS) and inverters.
6. Package: Available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
Overall, the SVF5N60F is well-suited for high-efficiency power management in various electronic circuits.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 5A, which allows it to handle substantial load currents.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 0.85 ohms, ensuring efficient power conversion with reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Fast Switching: Designed for fast switching speeds, it is ideal for applications like switch-mode power supplies (SMPS) and inverters.
6. Package: Available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
Overall, the SVF5N60F is well-suited for high-efficiency power management in various electronic circuits.
Package
The SVF5N60F is typically packaged in a TO-220 format, which is a three-lead device used for high-power applications, allowing for efficient heat dissipation and ease of mounting.
Pinout
The SVF5N60F is a N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the device.
4. Substrate (B): (sometimes connected internally or left floating) This pin is generally used for substrate or body connection in certain applications.
The SVF5N60F is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 5A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the device.
4. Substrate (B): (sometimes connected internally or left floating) This pin is generally used for substrate or body connection in certain applications.
The SVF5N60F is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 5A.
Manufacturer
The SVF5N60F is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Sanken Electric Co., Ltd. Founded in 1928, Sanken is a Japanese company that specializes in the design and production of semiconductor products, including power devices, discrete semiconductors, and integrated circuits. They serve various industries such as consumer electronics, automotive, and industrial applications. Sanken is known for its commitment to innovation and quality in power management solutions.
Application
The SVF5N60F is a high-voltage MOSFET used in various applications, including power supplies, DC-DC converters, motor drives, and lighting control. Its ability to handle high voltage and current makes it suitable for industrial equipment, renewable energy systems, and consumer electronics. It is also employed in switch-mode power supplies (SMPS) and inverters for efficient energy conversion and management.
Equivalent
The SVF5N60F is a N-channel MOSFET commonly used in power applications. Equivalent products include:
1. IRF250
2. STP5NK60Z
3. FQP5N60
4. MTP5N60E
5. FDP5N60
Check specific datasheets for detailed specifications to ensure compatibility in your application.
1. IRF250
2. STP5NK60Z
3. FQP5N60
4. MTP5N60E
5. FDP5N60
Check specific datasheets for detailed specifications to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25V1635FZNI
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L12833FZNI-10..
Macronix