画像は参照用のみです。
SVF23N50PN
- メーカー
- Mfr。パート #SVF23N50PN
- パッケージ
- データシート SVF23N50PN DataSheet
- 在庫中12378
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-3P-3 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Continuous Drain(Id) | 23A |
| Pd - Power Dissipation | 280W |
| Drain to Source Voltage | 500V |
| RDS(on) | 210mΩ@10V,11.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 42.51nC@10V |
| Input Capacitance(Ciss@Vds) | 2595.8pF@25V |
| Reverse Transfer Capacitance (Crss@Vds) | 10.1pF@25V |
概要
Description
The SVF23N50PN is a high-voltage N-channel power MOSFET designed for use in various electronic applications, such as power supplies, motor control, and switching circuits. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating typically reaching up to 23A, depending on the thermal conditions.
This device is built to provide low on-resistance and fast switching capabilities, which contribute to improved efficiency in power conversion processes. The SVF23N50PN is packaged in a TO-220 configuration, allowing for effective heat dissipation.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, making it suitable for logic-level drive applications, and a maximum power dissipation that can vary based on cooling solutions. Its robust construction allows it to handle high voltage spikes, making it ideal for applications requiring reliability under demanding conditions.
Overall, the SVF23N50PN is a versatile component in modern electronic design, supporting efficient power management and control.
This device is built to provide low on-resistance and fast switching capabilities, which contribute to improved efficiency in power conversion processes. The SVF23N50PN is packaged in a TO-220 configuration, allowing for effective heat dissipation.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, making it suitable for logic-level drive applications, and a maximum power dissipation that can vary based on cooling solutions. Its robust construction allows it to handle high voltage spikes, making it ideal for applications requiring reliability under demanding conditions.
Overall, the SVF23N50PN is a versatile component in modern electronic design, supporting efficient power management and control.
Features
The SVF23N50PN is a N-channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 23A. It boasts low on-resistance (R_DS(on)) values, ensuring efficient performance and minimal heat generation during operation. The device has a fast switching speed, making it suitable for applications such as power supplies, motor drives, and switch-mode power converters.
With a gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V, it allows for easy driving with standard logic levels. The SVF23N50PN is housed in a TO-220 package, providing adequate thermal dissipation.
This MOSFET is ideal for applications requiring high efficiency and reliability under high voltage conditions, making it a popular choice among engineers in power electronics.
With a gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V, it allows for easy driving with standard logic levels. The SVF23N50PN is housed in a TO-220 package, providing adequate thermal dissipation.
This MOSFET is ideal for applications requiring high efficiency and reliability under high voltage conditions, making it a popular choice among engineers in power electronics.
Package
The SVF23N50PN is typically available in a TO-220 package type. This package features three leads and is designed for high-power applications, offering efficient thermal management and ease of mounting.
Pinout
The SVF23N50PN is a N-channel MOSFET with a pin count of 3. Its pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET's switching, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This is the main current-carrying terminal where the load is connected. The current flows from the drain to the source when the device is on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The SVF23N50PN is designed for high-voltage applications (up to 500V) and can handle high currents, making it suitable for power management in various electronic devices, including power supplies and motor drivers.
1. Gate (G): This pin controls the MOSFET's switching, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This is the main current-carrying terminal where the load is connected. The current flows from the drain to the source when the device is on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The SVF23N50PN is designed for high-voltage applications (up to 500V) and can handle high currents, making it suitable for power management in various electronic devices, including power supplies and motor drivers.
Manufacturer
The SVF23N50PN is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor products, including microcontrollers, sensors, and power management devices, serving various industries such as automotive, industrial, and consumer electronics. The company is known for its innovative technology solutions and plays a significant role in the development of smart technologies and Internet of Things (IoT) applications. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates across several countries, focusing on sustainability and advanced manufacturing processes.
Application
The SVF23N50PN is a high-voltage N-channel MOSFET primarily used in power electronics applications such as switch-mode power supplies, DC-DC converters, and motor drivers. Its features make it suitable for high-efficiency switching applications, including industrial equipment, renewable energy systems, and automotive electronics. Additionally, it can be utilized in consumer electronics for efficient power management.
Equivalent
The SVF23N50PN is a 500V, 23A N-channel MOSFET. Equivalent products include:
1. STP23NM50 - STMicroelectronics
2. IRF230 - Infineon
3. FQP23N50 - On Semiconductor
4. MTP23N50 - ON Semiconductor
Always check specific datasheets for precise electrical characteristics and suitability for your application.
1. STP23NM50 - STMicroelectronics
2. IRF230 - Infineon
3. FQP23N50 - On Semiconductor
4. MTP23N50 - ON Semiconductor
Always check specific datasheets for precise electrical characteristics and suitability for your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FZBI-08Q
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M1I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25U25645GXDI00
Macronix