画像は参照用のみです。
SUM65N20-30-E3
MOSFET N-CH 200V 65A TO263
- メーカー
- Mfr。パート #SUM65N20-30-E3
- パッケージ TO-263-3
- データシート SUM65N20-30-E3 DataSheet
- 在庫中2663
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 65A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 30mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5100 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D²Pak) |
概要
Description
The SUM65N20-30-E3 is a high-performance N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. It features a low on-resistance (RDS(on)) of 65 mΩ, which minimizes power loss and enhances efficiency. With a maximum drain-source voltage of 200V and a continuous drain current rating of 30A, the SUM65N20-30-E3 is suitable for high-voltage and high-current applications.
This device is constructed using advanced semiconductor technology, ensuring fast switching speeds and improved thermal performance. It typically comes in a TO-220 package, making it easy to mount on heat sinks for better heat dissipation. The MOSFET also has a gate threshold voltage (VGS(th)) that allows it to be driven directly by microcontrollers or other low-voltage logic devices.
Overall, the SUM65N20-30-E3 is ideal for engineers looking to design efficient and reliable power systems. Its combination of high voltage, current handling capacity, and low resistance makes it a preferred choice in various electronic applications.
This device is constructed using advanced semiconductor technology, ensuring fast switching speeds and improved thermal performance. It typically comes in a TO-220 package, making it easy to mount on heat sinks for better heat dissipation. The MOSFET also has a gate threshold voltage (VGS(th)) that allows it to be driven directly by microcontrollers or other low-voltage logic devices.
Overall, the SUM65N20-30-E3 is ideal for engineers looking to design efficient and reliable power systems. Its combination of high voltage, current handling capacity, and low resistance makes it a preferred choice in various electronic applications.
Features
The SUM65N20-30-E3 is a N-channel MOSFET designed for efficient power management and high-performance applications. Key features include:
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 65V, it is suitable for a variety of power applications.
2. Current Rating: It has a continuous drain current (I_D) of 30A, making it capable of handling significant load demands.
3. R_DS(on): The device exhibits a low on-resistance (R_DS(on)), typically around 25 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Switching Speed: Designed for fast switching times, it helps in improving the overall performance in high-frequency applications.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
6. Thermal Performance: With a high thermal conductivity, it can operate effectively in demanding thermal environments.
These features make the SUM65N20-30-E3 ideal for applications in power supplies, motor drivers, and other high-efficiency circuits.
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 65V, it is suitable for a variety of power applications.
2. Current Rating: It has a continuous drain current (I_D) of 30A, making it capable of handling significant load demands.
3. R_DS(on): The device exhibits a low on-resistance (R_DS(on)), typically around 25 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Switching Speed: Designed for fast switching times, it helps in improving the overall performance in high-frequency applications.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
6. Thermal Performance: With a high thermal conductivity, it can operate effectively in demanding thermal environments.
These features make the SUM65N20-30-E3 ideal for applications in power supplies, motor drivers, and other high-efficiency circuits.
Package
The SUM65N20-30-E3 is a MOSFET packaged in a TO-220 form factor. This package type provides efficient thermal management and mechanical stability, making it suitable for various power applications.
Pinout
The SUM65N20-30-E3 is a power MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the on/off state of the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The terminal through which the load current flows. It is connected to the output of the circuit where the device will deliver power.
3. Source (S): The terminal through which the current exits the MOSFET, typically connected to ground or the negative supply in a circuit.
The SUM65N20-30-E3 is designed for high-efficiency applications, handling high voltage and current levels. It is often used in power management, DC-DC converters, and other switching applications.
1. Gate (G): Controls the on/off state of the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The terminal through which the load current flows. It is connected to the output of the circuit where the device will deliver power.
3. Source (S): The terminal through which the current exits the MOSFET, typically connected to ground or the negative supply in a circuit.
The SUM65N20-30-E3 is designed for high-efficiency applications, handling high voltage and current levels. It is often used in power management, DC-DC converters, and other switching applications.
Manufacturer
The SUM65N20-30-E3 is manufactured by Vishay Semiconductor, which is part of Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of a wide range of electronic components, including resistors, capacitors, inductors, diodes, and MOSFETs. The company serves various markets, including automotive, industrial, computing, consumer, and telecommunications. Vishay is known for its innovation and high-quality products, contributing significantly to the electronics industry worldwide.
Application
The SUM65N20-30-E3 is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include switch-mode power supplies, DC-DC converters, motor drives, and inverters. It is suitable for high-efficiency power electronic circuits in automotive, industrial, and consumer electronics due to its low on-resistance and fast switching capabilities.
Equivalent
The SUM65N20-30-E3 is a N-channel MOSFET. Equivalent products include the IRF740, STP16NM60, and BUK7Y8R8-60. Always check the specific data sheets for exact specifications and compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25V1635FZNI
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V4035FZUI
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix