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SUD19P06-60-GE3
MOSFET P-CH 60V 18.3A TO252
- メーカー
- Mfr。パート #SUD19P06-60-GE3
- パッケージ TO-252-3
- データシート
- 在庫中6152
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 18.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1710 pF @ 25 V |
| PowerDissipation(Max) | 2.3W (Ta), 38.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
SUD19P06-60-GE3 appears to be a specific course code, possibly related to a program in a higher education institution. While details on this exact course may not be readily available, courses with similar codes often cover specialized topics in fields like social sciences, health studies, or related areas. The "60" typically denotes the credit value, suggesting a substantial commitment, while "GE3" may indicate that it is a general education course or part of a specific program track.
For precise information, it would be best to consult the course catalog of the institution offering SUD19P06-60-GE3, where you'll find details on the syllabus, learning objectives, prerequisites, and assessment methods. If you have access to the educational institution's resources, they can provide up-to-date and relevant information on this course.
For precise information, it would be best to consult the course catalog of the institution offering SUD19P06-60-GE3, where you'll find details on the syllabus, learning objectives, prerequisites, and assessment methods. If you have access to the educational institution's resources, they can provide up-to-date and relevant information on this course.
Features
The SUD19P06-60-GE3 is a 60V P-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Can handle continuous drain current (I_D) of up to 19A, making it suitable for high-power applications.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 0.06 ohms, ensuring efficient operation and reduced heat generation during switching.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing efficiency in switching applications.
5. Thermal Resistance: Features a low thermal resistance, allowing for better heat dissipation and improved performance under load.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat sinking and better thermal management.
This MOSFET is ideal for use in automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and power management circuits.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Can handle continuous drain current (I_D) of up to 19A, making it suitable for high-power applications.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 0.06 ohms, ensuring efficient operation and reduced heat generation during switching.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing efficiency in switching applications.
5. Thermal Resistance: Features a low thermal resistance, allowing for better heat dissipation and improved performance under load.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat sinking and better thermal management.
This MOSFET is ideal for use in automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and power management circuits.
Package
The SUD19P06-60-GE3 is packaged in a TO-220 form factor. This type of package is commonly used for power transistors and offers good thermal performance and ease of mounting on heat sinks.
Pinout
The SUD19P06-60-GE3 is a P-channel MOSFET typically used for power management applications. It features a TO-220 package with three pins.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the load current flows; it's where the output is connected.
3. Source (S) - The terminal connected to the power supply or ground, depending on the configuration.
The device is designed for high voltage and high current applications, offering a maximum drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of up to -19A. It provides low on-resistance (R_DS(on)), making it efficient for switching applications.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the load current flows; it's where the output is connected.
3. Source (S) - The terminal connected to the power supply or ground, depending on the configuration.
The device is designed for high voltage and high current applications, offering a maximum drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of up to -19A. It provides low on-resistance (R_DS(on)), making it efficient for switching applications.
Manufacturer
The SUD19P06-60-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products, including diodes, transistors, resistors, capacitors, and inductors, serving various industries such as automotive, telecommunications, industrial, and consumer electronics. Vishay is known for its high-quality components and innovation in electronic technologies, catering to both standard and custom applications.
Application
The SUD19P06-60-GE3 is a high-voltage, N-channel MOSFET commonly used in power management applications. Its areas of application include switching power supplies, motor control, and automotive systems. It is also suitable for use in DC-DC converters, LED drivers, and other electronic devices requiring efficient power switching and thermal performance.
Equivalent
The SUD19P06-60-GE3 is a P-channel MOSFET. Equivalent products include the FQP19P06, IRF9540, and STP19P06. Always check specifications and ratings to ensure compatibility for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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