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STY139N65M5
MOSFET N-CH 650V 130A MAX247
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- Mfr。パート #STY139N65M5
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- データシート STY139N65M5 DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 17mOhm @ 65A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 363 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 15600 pF @ 100 V |
| PowerDissipation(Max) | 625W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | MAX247™ |
概要
Description
STY139N65M5 is a specific model of Silicon Carbide (SiC) MOSFET, designed for high-efficiency power electronics applications. SiC MOSFETs are known for their high voltage, high temperature, and fast switching capabilities, making them suitable for applications such as electric vehicles, renewable energy systems, and industrial power supplies.
The "N" in the model number typically indicates an N-channel type, which is commonly used in power conversion circuits. The "65M5" refers to the maximum voltage rating (650V) and the specific generation or series of the device. This component offers benefits like reduced conduction losses, improved thermal performance, and higher switching frequencies compared to traditional silicon-based MOSFETs.
When integrating the STY139N65M5 into a design, one must consider its thermal management, gate drive requirements, and overall system topology to maximize performance and reliability.
The "N" in the model number typically indicates an N-channel type, which is commonly used in power conversion circuits. The "65M5" refers to the maximum voltage rating (650V) and the specific generation or series of the device. This component offers benefits like reduced conduction losses, improved thermal performance, and higher switching frequencies compared to traditional silicon-based MOSFETs.
When integrating the STY139N65M5 into a design, one must consider its thermal management, gate drive requirements, and overall system topology to maximize performance and reliability.
Features
The STY139N65M5 is a high-performance N-channel MOSFET designed for power electronics applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 139A, enabling it to drive heavy loads effectively.
3. R_DS(on): It offers a low on-state resistance (R_DS(on)) of around 0.139 ohms, which helps reduce conduction losses and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2 to 4V, allowing for easy drive with standard gate voltages.
5. Fast Switching: The MOSFET features fast switching times, making it suitable for applications such as switch-mode power supplies (SMPS) and inverters.
6. Thermal Performance: It has a robust thermal management capability, with a maximum operating junction temperature of 175°C.
These features make the STY139N65M5 an ideal choice for high-efficiency and high-power applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 139A, enabling it to drive heavy loads effectively.
3. R_DS(on): It offers a low on-state resistance (R_DS(on)) of around 0.139 ohms, which helps reduce conduction losses and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2 to 4V, allowing for easy drive with standard gate voltages.
5. Fast Switching: The MOSFET features fast switching times, making it suitable for applications such as switch-mode power supplies (SMPS) and inverters.
6. Thermal Performance: It has a robust thermal management capability, with a maximum operating junction temperature of 175°C.
These features make the STY139N65M5 an ideal choice for high-efficiency and high-power applications.
Package
The STY139N65M5 is housed in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting.
Pinout
The STY139N65M5 is a high-voltage N-channel MOSFET with a pin count of 6. Its primary functions include efficient switching and amplification in power electronics applications. The pins are typically arranged as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load connects.
3. Source (S) - The reference terminal, usually connected to ground in common applications.
4. Gate-Source (G-S) Protection Diode - Internal clamp for gate protection.
5. Thermal Pad - Used for heat dissipation.
This device operates at a maximum drain-source voltage of 650V and is designed for high efficiency in applications like power supplies and motor drives. The low on-resistance helps in reducing conduction losses, making it suitable for high-frequency operations.
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load connects.
3. Source (S) - The reference terminal, usually connected to ground in common applications.
4. Gate-Source (G-S) Protection Diode - Internal clamp for gate protection.
5. Thermal Pad - Used for heat dissipation.
This device operates at a maximum drain-source voltage of 650V and is designed for high efficiency in applications like power supplies and motor drives. The low on-resistance helps in reducing conduction losses, making it suitable for high-frequency operations.
Manufacturer
The STY139N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, sensors, and power management devices. The company serves various markets such as automotive, industrial, personal electronics, and communication. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in semiconductor technology and plays a key role in the development of solutions for smart devices, Internet of Things (IoT), and energy-efficient applications.
Application
The STY139N65M5 is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor drives, and DC-DC converters. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and renewable energy systems, including solar inverters. Additionally, it can be utilized in electric vehicle (EV) systems and other high-power switching applications.
Equivalent
The STY139N65M5 is a 650V N-channel MOSFET. Equivalent products include the STMicroelectronics STP139N65M5, Infineon IPP139N65, ON Semiconductor NTMFS5C645NL, and Vishay SiHG39N65. Always check datasheets for specific characteristics and suitability for your application.
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