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STWA88N65M5
MOSFET N-CH 650V 84A TO247
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- Mfr。パート #STWA88N65M5
- パッケージ
- データシート STWA88N65M5 DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 84A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 29mOhm @ 42A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 204 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 8825 pF @ 100 V |
| PowerDissipation(Max) | 450W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
STWA88N65M5 (often listed as STW8N65M5/A88N65M5) is an STMicroelectronics high‑voltage N‑channel enhancement MOSFET from the STW family. It’s designed for switching power electronics.
Key points:
- Type: N‑channel power MOSFET
- Vds: about 650 V (high-voltage class)
- Id: around 8 A (depends on package and cooling)
- Technology: trench MOSFET with rugged switching/avalanche characteristics
- Applications: switch-mode power supplies, PFCs, DC‑DC converters, motor drives, inverters
- Packaging: available in power packages (e.g., D²PAK/TO‑263, TO‑220 variants); check exact variant for pinout and thermal/leadframe details
- Important specs to verify: Rds(on), gate charge (Qg), Qgs/Qgd, switching times, and avalanche energy rating
For exact electrical figures, consult the specific datasheet for the exact package/version you’re using.
Key points:
- Type: N‑channel power MOSFET
- Vds: about 650 V (high-voltage class)
- Id: around 8 A (depends on package and cooling)
- Technology: trench MOSFET with rugged switching/avalanche characteristics
- Applications: switch-mode power supplies, PFCs, DC‑DC converters, motor drives, inverters
- Packaging: available in power packages (e.g., D²PAK/TO‑263, TO‑220 variants); check exact variant for pinout and thermal/leadframe details
- Important specs to verify: Rds(on), gate charge (Qg), Qgs/Qgd, switching times, and avalanche energy rating
For exact electrical figures, consult the specific datasheet for the exact package/version you’re using.
Features
STW88N65M5 is an STMicroelectronics N-channel Power MOSFET (650 V class). Key features:
- N-channel MOSFET with 650 V blocking capability
- High drain current capability (roughly 80–90 A depending on package/conditions)
- On-state resistance in the HV range (typical around ~0.8–1.0 Ω)
- Trench MOSFET structure for improved switching performance
- Avalanche energy (EAS) rugged for inductive load switching
- Built-in body diode with fast switching characteristics
- Gate drive: standard 10 V for full enhancement; gate threshold ≈ 2–4 V
- Low gate charge for efficient drive
- Wide operating temperature range; max junction temp around 150°C
- Packaging options: D²PAK/DPAK (and other variants depending on supplier)
For exact numbers (RDS(on), ID, EAS, Qg) and available packages, please refer to the current ST datasheet.
- N-channel MOSFET with 650 V blocking capability
- High drain current capability (roughly 80–90 A depending on package/conditions)
- On-state resistance in the HV range (typical around ~0.8–1.0 Ω)
- Trench MOSFET structure for improved switching performance
- Avalanche energy (EAS) rugged for inductive load switching
- Built-in body diode with fast switching characteristics
- Gate drive: standard 10 V for full enhancement; gate threshold ≈ 2–4 V
- Low gate charge for efficient drive
- Wide operating temperature range; max junction temp around 150°C
- Packaging options: D²PAK/DPAK (and other variants depending on supplier)
For exact numbers (RDS(on), ID, EAS, Qg) and available packages, please refer to the current ST datasheet.
Package
D²PAK (TO-263) surface-mount package.
Pinout
- Pin count: 8 pins
- Function: N-channel enhancement-mode power MOSFET (high-voltage switch) in ST’s PowerFLAT 8 package (650 V class).
- Function: N-channel enhancement-mode power MOSFET (high-voltage switch) in ST’s PowerFLAT 8 package (650 V class).
Manufacturer
Manufacturer: STMicroelectronics (ST).
What kind of company: A multinational electronics and semiconductor company that designs, manufactures, and markets semiconductor devices, ICs, power electronics, sensors, and related components.
What kind of company: A multinational electronics and semiconductor company that designs, manufactures, and markets semiconductor devices, ICs, power electronics, sensors, and related components.
Application
STWA88N65M5 is a high‑voltage N‑channel power MOSFET (650 V class). Common applications include:
- Offline switch‑mode power supplies (flyback/forward, PFC)
- Motor drives (BLDC/DC motors)
- DC–DC converters and inverters for solar/energy storage
- Uninterruptible power supplies (UPS)
- General industrial and automotive power electronics
- Offline switch‑mode power supplies (flyback/forward, PFC)
- Motor drives (BLDC/DC motors)
- DC–DC converters and inverters for solar/energy storage
- Uninterruptible power supplies (UPS)
- General industrial and automotive power electronics
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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