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STW69N65M5-4
MOSFET N-CH 650V 58A TO247-4L
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- Mfr。パート #STW69N65M5-4
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- データシート STW69N65M5-4 DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 58A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 45mOhm @ 29A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 143 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 6420 pF @ 100 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
概要
Description
The STW69N65M5-4 is a high-voltage N-channel MOSFET designed for power applications, particularly in switching and amplification. It belongs to STMicroelectronics' M5 series, known for its low on-state resistance (RDS(on)), which enhances efficiency and reduces heat generation during operation.
This MOSFET can handle a maximum drain-source voltage (VDS) of 650V and offers a continuous drain current (ID) of up to 69A, making it suitable for high-power applications such as converters, industrial drives, and consumer electronics. Its low gate charge (Qg) facilitates faster switching, contributing to improved performance in high-frequency applications.
The device features a TO-220 package, which aids in effective heat dissipation. The STW69N65M5-4 is ideal for engineers seeking reliable and efficient components for power management systems.
For specific applications, proper thermal management and gate drive considerations are essential to ensure optimal performance and longevity.
This MOSFET can handle a maximum drain-source voltage (VDS) of 650V and offers a continuous drain current (ID) of up to 69A, making it suitable for high-power applications such as converters, industrial drives, and consumer electronics. Its low gate charge (Qg) facilitates faster switching, contributing to improved performance in high-frequency applications.
The device features a TO-220 package, which aids in effective heat dissipation. The STW69N65M5-4 is ideal for engineers seeking reliable and efficient components for power management systems.
For specific applications, proper thermal management and gate drive considerations are essential to ensure optimal performance and longevity.
Features
The STW69N65M5-4 is an N-channel MOSFET from STMicroelectronics, designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 69A, making it capable of handling significant loads.
3. Low On-Resistance: R_DS(on) is typically 0.14 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for enhanced switching performance, ideal for applications like power supplies and motor control.
5. Thermal Performance: Built with a TO-220 package, providing good thermal dissipation characteristics.
6. Gate Threshold Voltage: V_GS(th) in the range of 2V to 4V, allowing for easy drive with standard control voltages.
7. Built-in Protection: Features like avalanche rating for improved reliability in transient conditions.
These attributes make the STW69N65M5-4 suitable for use in industrial, consumer, and automotive applications where efficiency and thermal management are crucial.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 69A, making it capable of handling significant loads.
3. Low On-Resistance: R_DS(on) is typically 0.14 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for enhanced switching performance, ideal for applications like power supplies and motor control.
5. Thermal Performance: Built with a TO-220 package, providing good thermal dissipation characteristics.
6. Gate Threshold Voltage: V_GS(th) in the range of 2V to 4V, allowing for easy drive with standard control voltages.
7. Built-in Protection: Features like avalanche rating for improved reliability in transient conditions.
These attributes make the STW69N65M5-4 suitable for use in industrial, consumer, and automotive applications where efficiency and thermal management are crucial.
Package
The STW69N65M5-4 is packaged in a TO-247 format, which is a standard package type for high-power MOSFETs. This package provides good thermal performance and is suitable for applications requiring efficient power management.
Pinout
The STW69N65M5-4 is a N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplification in electronic circuits. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state. A voltage applied to this pin turns the device on.
2. Drain (D): The output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or a lower potential in the circuit.
Additionally, it features a low R_DS(on) for efficient operation, making it suitable for applications in power supplies and motor control. The device is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 69A, providing robust performance in high-voltage applications.
1. Gate (G): Controls the MOSFET's on/off state. A voltage applied to this pin turns the device on.
2. Drain (D): The output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or a lower potential in the circuit.
Additionally, it features a low R_DS(on) for efficient operation, making it suitable for applications in power supplies and motor control. The device is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 69A, providing robust performance in high-voltage applications.
Manufacturer
The manufacturer of the STW69N65M5-4 is STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It serves various sectors, including automotive, industrial, personal electronics, and communication equipment. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in technologies such as microcontrollers, power management, and analog devices. The company focuses on providing solutions that improve energy efficiency and enhance connectivity in electronic devices.
Application
The STW69N65M5-4 is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor drives, and industrial automation. Its features make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and inverters in renewable energy systems. Additionally, it can be utilized in automotive applications and high-efficiency power management systems due to its low on-resistance and high-speed switching capabilities.
Equivalent
Equivalent products to the STW69N65M5-4 chip include the STW69N65M5, STW65N65M5, and the STW70N65M5. These are also IGBT transistors from STMicroelectronics with similar voltage and current ratings, suitable for similar applications. Always verify specifications such as V_CE, I_C, and R_DS(on) before substitution.
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