STW65N65DM2AG

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STW65N65DM2AG

MOSFET N-CH 650V 60A TO247

100% オリジナル &新しい

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仕様

Package Tube
Series Automotive, AEC-Q101, MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 50mOhm @ 30A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 5500 pF @ 100 V
PowerDissipation(Max) 446W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

概要

Description

The STW65N65DM2AG is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 65A, making it suitable for demanding tasks such as power supplies, motor controls, and lighting applications.
This MOSFET is particularly valued for its low on-resistance (R_DS(on)), which reduces power losses during operation, enhancing overall system efficiency. It offers fast switching capabilities, making it ideal for high-frequency applications. The device is housed in a TO-220 package, providing effective thermal management and ease of mounting.
The STW65N65DM2AG is well-suited for use in various circuits, including switch-mode power supplies (SMPS) and DC-DC converters, where efficiency and thermal performance are critical. Its robust construction and performance characteristics make it a reliable choice for engineers seeking to optimize power management solutions.

Features

The STW65N65DM2AG is a N-channel MOSFET from STMicroelectronics, designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: 65A continuous drain current, allowing for significant load handling.
3. R_DS(on): Low on-resistance of approximately 0.065 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: 2V to 4V, facilitating compatibility with various gate drive circuits.
5. Fast Switching: Designed for high-speed switching, making it ideal for applications like power supplies and converters.
6. Robustness: Integrated with avalanche rating, enhancing reliability under transient conditions.
7. Package: Available in TO-220 and DPAK packages, providing flexibility for different thermal management and PCB layout requirements.
Overall, the STW65N65DM2AG is well-suited for applications in industrial power supplies, motor drives, and renewable energy systems.

Package

The STW65N65DM2AG is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The STW65N65DM2AG is an N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The STW65N65DM2AG is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 65A, making it suitable for high-voltage applications such as power converters and motor drives.

Manufacturer

The STW65N65DM2AG is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various industries such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its focus on innovation and sustainability, providing solutions that enhance energy efficiency and functionality in electronic systems.

Application

The STW65N65DM2AG is a N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: For efficient power conversion.
2. Motor Control: Inverters and drivers for electric motors.
3. DC-DC Converters: Step-down and step-up voltage regulation.
4. Industrial Equipment: Power management in various devices.
5. Automotive Applications: Electric vehicle power systems and battery management.
Its high voltage and current ratings make it suitable for demanding applications.

Equivalent

The STW65N65DM2AG is an N-channel MOSFET rated for 65V and 60A. Equivalent products include Infineon's BSC065N65LSG, Vishay's SiF1N65E, and ON Semiconductor's NTMFS5C645NL. When selecting an equivalent, ensure similar voltage, current ratings, and RDS(on) characteristics. Always verify with datasheets for specific application requirements.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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