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STW48NM60N
MOSFET N-CH 600V 44A TO247
- メーカー
- Mfr。パート #STW48NM60N
- パッケージ TO-247-3
- データシート STW48NM60N DataSheet
- 在庫中3561
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仕様
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 70mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 124 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4285 pF @ 50 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
The STW48NM60N is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 48A. This MOSFET is ideal for switch-mode power supplies, motor drives, and other high-efficiency applications due to its low on-resistance (R_DS(on)), which reduces power losses during operation. The device is housed in a TO-247 package, allowing for efficient heat dissipation.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a fast switching capability, making it suitable for high-frequency applications. With a maximum junction temperature of 150°C, it offers reliability in demanding environments. The STW48NM60N's characteristics enable designers to achieve greater efficiency and performance in their circuits. Overall, it is a preferred choice for engineers looking to enhance the efficiency of their power management systems.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a fast switching capability, making it suitable for high-frequency applications. With a maximum junction temperature of 150°C, it offers reliability in demanding environments. The STW48NM60N's characteristics enable designers to achieve greater efficiency and performance in their circuits. Overall, it is a preferred choice for engineers looking to enhance the efficiency of their power management systems.
Features
The STW48NM60N is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle up to 48A of continuous drainage, allowing for substantial current flow in circuits.
3. Low On-Resistance: The on-resistance (Rds(on)) is approximately 0.24 ohms at Vgs = 10V, which minimizes power losses and improves efficiency.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for applications like switch-mode power supplies and inverters.
5. Thermal Performance: It comes in a TO-247 package that allows for efficient heat dissipation, crucial for maintaining performance in high-power applications.
6. Body Diode: The integrated body diode provides efficient reverse recovery characteristics, enhancing overall circuit performance.
These features make the STW48NM60N suitable for various applications, including automotive, industrial, and consumer electronics.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle up to 48A of continuous drainage, allowing for substantial current flow in circuits.
3. Low On-Resistance: The on-resistance (Rds(on)) is approximately 0.24 ohms at Vgs = 10V, which minimizes power losses and improves efficiency.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for applications like switch-mode power supplies and inverters.
5. Thermal Performance: It comes in a TO-247 package that allows for efficient heat dissipation, crucial for maintaining performance in high-power applications.
6. Body Diode: The integrated body diode provides efficient reverse recovery characteristics, enhancing overall circuit performance.
These features make the STW48NM60N suitable for various applications, including automotive, industrial, and consumer electronics.
Package
The STW48NM60N is typically packaged in a TO-220 package type. This package facilitates efficient heat dissipation and is commonly used for high-power applications.
Pinout
The STW48NM60N is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current flows into the device. It connects to the high side of the load in a switching configuration.
3. Source (S): This pin is the output side where the current flows out of the MOSFET, typically connected to ground or the negative side of the load.
The STW48NM60N is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 48A. It is commonly used in power management and switching applications.
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current flows into the device. It connects to the high side of the load in a switching configuration.
3. Source (S): This pin is the output side where the current flows out of the MOSFET, typically connected to ground or the negative side of the load.
The STW48NM60N is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 48A. It is commonly used in power management and switching applications.
Manufacturer
The STW48NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, and manufacturing of a wide range of electronic components, including integrated circuits, microcontrollers, and power devices. Founded in 1987, the company operates in various sectors such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovative solutions in power management and energy efficiency, making it a key player in the semiconductor industry.
Application
The STW48NM60N is a 600V N-channel MOSFET suitable for various applications, including switch-mode power supplies (SMPS), motor drives, industrial power supplies, and lighting control. Its high voltage and current capabilities make it ideal for use in renewable energy systems, such as solar inverters and wind turbine converters, as well as in electric vehicles for power management. Additionally, it is used in high-frequency applications due to its low switching losses.
Equivalent
The STW48NM60N is an N-channel MOSFET typically used in power applications. Equivalent products include the IRF840, FQP47P06, and SPP60N60C3. Always check the specific parameters like voltage, current rating, R_DS(on), and package type to ensure compatibility in your application.
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