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STW48N60M6
MOSFET N-CH 600V 39A TO247
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- Mfr。パート #STW48N60M6
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- データシート STW48N60M6 DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ M6 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 39A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 69mOhm @ 19.5A, 10V |
| Vgs(th)(Max)@Id | 4.75V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 57 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2578 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
The STW48N60M6 is a high-voltage N-channel MOSFET designed for efficient power management applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 48A, making it suitable for use in switch-mode power supplies, inverters, and motor control applications. The device is known for its low on-resistance (R_DS(on)), which minimizes conduction losses, and a fast switching speed, enhancing overall efficiency.
Key features include a maximum gate-source voltage (V_GS) rating of ±20V, a thermal resistance junction-to-case (R_THJC) of 0.5 °C/W, and a high avalanche capability. The STW48N60M6 is packaged in a TO-220 form factor, allowing for effective heat dissipation during operation.
Designed for high-performance applications, it supports various industrial and consumer electronics, ensuring reliability and stability in demanding environments. Its robust characteristics make it a popular choice among engineers for developing efficient electronic circuits.
Key features include a maximum gate-source voltage (V_GS) rating of ±20V, a thermal resistance junction-to-case (R_THJC) of 0.5 °C/W, and a high avalanche capability. The STW48N60M6 is packaged in a TO-220 form factor, allowing for effective heat dissipation during operation.
Designed for high-performance applications, it supports various industrial and consumer electronics, ensuring reliability and stability in demanding environments. Its robust characteristics make it a popular choice among engineers for developing efficient electronic circuits.
Features
The STW48N60M6 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage operations.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 48A, which is beneficial for power management.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.060 ohms, ensuring efficient conduction and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2-4V, allowing for easy driving with standard gate voltages.
5. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications in switching power supplies, motor drivers, and inverters.
6. Package Type: Typically available in a TO-220 package, facilitating heat dissipation and ease of mounting.
These features make the STW48N60M6 suitable for use in various electronic circuits requiring reliable high-voltage switching.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage operations.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 48A, which is beneficial for power management.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.060 ohms, ensuring efficient conduction and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2-4V, allowing for easy driving with standard gate voltages.
5. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications in switching power supplies, motor drivers, and inverters.
6. Package Type: Typically available in a TO-220 package, facilitating heat dissipation and ease of mounting.
These features make the STW48N60M6 suitable for use in various electronic circuits requiring reliable high-voltage switching.
Package
The STW48N60M6 is packaged in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting.
Pinout
The STW48N60M6 is a high-voltage MOSFET from STMicroelectronics with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply.
This MOSFET is designed for high voltage applications, rated for 600V with a maximum continuous current of 48A, making it suitable for use in power supplies, motor drives, and other high-power applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply.
This MOSFET is designed for high voltage applications, rated for 600V with a maximum continuous current of 48A, making it suitable for use in power supplies, motor drives, and other high-power applications.
Manufacturer
The STW48N60M6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor products, including power management devices, microcontrollers, and sensors. The company serves various markets such as automotive, industrial, consumer electronics, and telecommunications. Established as a result of a merger between SGS Microelettronica and Thomson Semiconductors in 1987, STMicroelectronics has a strong focus on innovation and sustainability in its product offerings. The STW48N60M6 is a N-channel MOSFET designed for high-efficiency power applications, showcasing the company's commitment to providing advanced electronic components for modern technologies.
Application
The STW48N60M6 is a high-voltage MOSFET used in various applications, including power supplies, motor drives, and industrial automation systems. Its characteristics make it suitable for switch-mode power supplies (SMPS), inverters, and converters in renewable energy systems, as well as in electric vehicles and lighting control circuits. Its efficiency and thermal performance also make it ideal for high-frequency applications.
Equivalent
The STW48N60M6 is a power MOSFET with a 600V rating, 48A continuous current, and low RDS(on) characteristics. Equivalent products include:
1. IRF840 - 500V, 8A (lower voltage)
2. IRFHC40 - 400V, 40A
3. MTP50N60E - 600V, 50A
4. FQA50N60 - 600V, 50A
Always verify specifications for compatibility in your application.
1. IRF840 - 500V, 8A (lower voltage)
2. IRFHC40 - 400V, 40A
3. MTP50N60E - 600V, 50A
4. FQA50N60 - 600V, 50A
Always verify specifications for compatibility in your application.
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