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STW45NM60
MOSFET N-CH 650V 45A TO247-3
- メーカー
- Mfr。パート #STW45NM60
- パッケージ TO-247
- データシート STW45NM60 DataSheet
- 在庫中6857
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仕様
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 110mOhm @ 22.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 134 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3800 pF @ 25 V |
| PowerDissipation(Max) | 417W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
The STW45NM60 is a high-voltage N-channel MOSFET designed for use in switching applications, particularly in power management systems. With a voltage rating of 600V and a continuous current capability of 45A, it is suitable for various applications, including industrial equipment, power converters, and motor drives.
Key features include a low on-resistance (Rds(on)) that minimizes conduction losses, a fast switching speed that enhances efficiency, and a robust built-in protection against thermal runaway. It typically has a gate threshold voltage (Vgs) of 2-4V, facilitating easy driving from standard logic levels. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy integration into power circuits.
Its performance characteristics make the STW45NM60 a reliable choice for engineers looking to design efficient, high-performance power systems.
Key features include a low on-resistance (Rds(on)) that minimizes conduction losses, a fast switching speed that enhances efficiency, and a robust built-in protection against thermal runaway. It typically has a gate threshold voltage (Vgs) of 2-4V, facilitating easy driving from standard logic levels. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy integration into power circuits.
Its performance characteristics make the STW45NM60 a reliable choice for engineers looking to design efficient, high-performance power systems.
Features
The STW45NM60 is a N-channel MOSFET designed for high-voltage applications, featuring a voltage rating of 600V and a continuous drain current of 45A. Key features include:
1. Low On-Resistance (R_DS(on)): Typically around 0.07 ohms, which minimizes conduction losses.
2. High Speed: Fast switching capabilities, suitable for applications in power supplies and motor control.
3. Thermal Performance: Designed with a high maximum junction temperature of 150°C, enhancing reliability in demanding environments.
4. Gate Threshold Voltage: Low threshold voltage enables efficient driving with lower gate voltages.
5. Robust Package: Available in TO-220 and D2PAK packages for effective heat dissipation.
6. Safe Operating Area: Designed to operate safely over a wide range of temperatures and conditions.
These features make the STW45NM60 suitable for applications in industrial equipment, power inverters, and other high-power electronics.
1. Low On-Resistance (R_DS(on)): Typically around 0.07 ohms, which minimizes conduction losses.
2. High Speed: Fast switching capabilities, suitable for applications in power supplies and motor control.
3. Thermal Performance: Designed with a high maximum junction temperature of 150°C, enhancing reliability in demanding environments.
4. Gate Threshold Voltage: Low threshold voltage enables efficient driving with lower gate voltages.
5. Robust Package: Available in TO-220 and D2PAK packages for effective heat dissipation.
6. Safe Operating Area: Designed to operate safely over a wide range of temperatures and conditions.
These features make the STW45NM60 suitable for applications in industrial equipment, power inverters, and other high-power electronics.
Package
The STW45NM60 is packaged in a TO-220 form factor, which is a robust and widely used package for power devices. This package type allows for efficient heat dissipation and easy mounting to heat sinks, making it suitable for high-power applications.
Pinout
The STW45NM60 is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation; applying a voltage to this pin allows current to flow from drain to source.
2. Drain (D): The terminal where the current enters when the device is on; it connects to the load.
3. Source (S): The terminal where the current exits; typically connected to ground in standard configurations.
This MOSFET is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 45A. It features low on-resistance, making it suitable for power management in various applications, including power supplies and motor control.
1. Gate (G): Controls the MOSFET operation; applying a voltage to this pin allows current to flow from drain to source.
2. Drain (D): The terminal where the current enters when the device is on; it connects to the load.
3. Source (S): The terminal where the current exits; typically connected to ground in standard configurations.
This MOSFET is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 45A. It features low on-resistance, making it suitable for power management in various applications, including power supplies and motor control.
Manufacturer
The STW45NM60 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland. The company specializes in a wide range of products, including microcontrollers, analog ICs, memory devices, and power management solutions. It serves various sectors, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is recognized for its innovation and commitment to sustainability, focusing on enhancing energy efficiency and performance in electronic applications.
Application
The STW45NM60 is a N-channel MOSFET used primarily in power electronics applications such as switch-mode power supplies, motor drivers, and inverters. Its high voltage and current ratings make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it is utilized in audio amplifiers and lighting control circuits due to its efficiency and fast switching capabilities.
Equivalent
Equivalent products to the STW45NM60 MOSFET include:
1. IRF320 - N-channel MOSFET
2. FQP45N60 - N-channel MOSFET
3. MTP45N60 - N-channel MOSFET
4. AUIRF320 - N-channel MOSFET
These alternatives may have similar specifications regarding voltage, current, and on-resistance, but verify the datasheets for specific applications.
1. IRF320 - N-channel MOSFET
2. FQP45N60 - N-channel MOSFET
3. MTP45N60 - N-channel MOSFET
4. AUIRF320 - N-channel MOSFET
These alternatives may have similar specifications regarding voltage, current, and on-resistance, but verify the datasheets for specific applications.
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DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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