STW10NK80Z

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STW10NK80Z

MOSFET N-CH 800V 9A TO247-3

100% オリジナル &新しい

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仕様

Package Tube
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 900mOhm @ 4.5A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 72 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2180 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

概要

Description

The STW10NK80Z is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 10A, making it suitable for various switching and amplification tasks in high voltage environments. With a low on-resistance (R_DS(on)) of around 0.8 ohms, it minimizes power loss during operation, enhancing efficiency in circuits.
This MOSFET is ideal for use in power supplies, motor drives, and inverters, among other applications. It supports fast switching speeds, which is beneficial for modern electronic systems that require rapid response times. The device also includes thermal management features, enabling it to operate effectively at higher temperatures, thus ensuring reliability in demanding applications.
The STW10NK80Z is encapsulated in a TO-220 package, facilitating easy integration into various circuit designs while allowing for efficient heat dissipation. Overall, it is a versatile component for engineers looking to build robust, efficient power electronic systems.

Features

The STW10NK80Z is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It can withstand a maximum drain-source voltage of 800V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current capability of up to 10A, providing robust performance in power circuits.
3. RDS(on): The device has a low on-resistance (RDS(on)) of around 0.8 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage is low, allowing for easier drive requirements and compatibility with various gate drivers.
5. Thermal Performance: It features a maximum junction temperature of 150°C and a TO-220 package for effective heat dissipation.
6. Fast Switching: Its design enables fast switching speeds, making it suitable for applications like switch-mode power supplies and motor drives.
These features make the STW10NK80Z an excellent choice for applications requiring efficient high-voltage switching.

Package

The STW10NK80Z is available in a TO-220 package type. This package features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The STW10NK80Z is an N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET's switching action; applying a voltage here allows current to flow from drain to source.

2. Drain (D) - This pin is connected to the load; current flows out of this terminal when the MOSFET is in the on state.

3. Source (S) - This pin is usually connected to ground or the negative side of the power supply; current enters this terminal when the MOSFET is on.
The STW10NK80Z has a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of up to 10A, making it suitable for applications like switch-mode power supplies and motor control.

Manufacturer

The STW10NK80Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including power management, analog, and digital ICs (integrated circuits). The company serves various markets, including automotive, industrial, personal electronics, and communication equipment. With a strong focus on innovation and sustainability, STMicroelectronics plays a significant role in the development of technologies for the Internet of Things (IoT), smart devices, and energy management solutions. The company is headquartered in Geneva, Switzerland, and has a significant presence worldwide.

Application

The STW10NK80Z is a N-channel MOSFET used in various applications, including power supplies, motor drives, and switching regulators. Its high voltage rating (800V) and low on-resistance make it suitable for industrial equipment, lighting control, and energy-efficient systems. It is also utilized in DC-DC converters and inverters for renewable energy systems, such as solar and wind power, due to its efficiency and thermal performance.

Equivalent

The STW10NK80Z is an N-channel MOSFET, typically used in high voltage applications. Equivalent products include:
1. IRF840
2. FQP13N80C
3. MTP10N80E
4. STP10NK80Z
Always verify specifications such as V_DS, I_D, R_DS(on), and package type for compatibility in your application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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