STPSC8H065B-TR

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STPSC8H065B-TR

DIODE SCHOTTKY 650V 8A DPAK

100% オリジナル &新しい

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365日の保証

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeType Silicon Carbide Schottky
Voltage-DCReverse(Vr)(Max) 650 V
Current-AverageRectified(Io) 8A
Voltage-Forward(Vf)(Max)@If 1.75 V @ 8 A
Speed No Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr) 0 ns
Current-ReverseLeakage@Vr 80 µA @ 650 V
Capacitance@VrF 414pF @ 0V, 1MHz
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63
SupplierDevicePackage DPAK

概要

Description

The STPSC8H065B-TR is a 650V, 8A, silicon carbide (SiC) Schottky diode designed for high-efficiency power applications. It features a low forward voltage drop and fast switching speeds, making it ideal for use in power converters, motor drives, and renewable energy systems. The SiC technology enhances thermal performance, allowing the device to operate at higher temperatures and under more demanding conditions than traditional silicon diodes.
This diode is housed in a TO-220 package, which facilitates effective heat dissipation and simplifies mounting in various applications. The STPSC8H065B-TR also exhibits excellent reliability and lower reverse recovery current, further improving efficiency and reducing losses in power circuits. With its robust performance, it is suitable for applications like battery chargers, UPS systems, and industrial power supplies, contributing to a more compact and efficient design in modern electronic systems.

Features

The STPSC8H065B-TR is a 650V, 8A power Schottky diode designed for high-efficiency applications. Key features include:
1. High Voltage Rating: Operates up to 650V, suitable for various high-voltage applications.
2. Low Forward Voltage Drop: Offers a low forward voltage drop, enhancing efficiency and reducing power loss.
3. Fast Recovery: Provides quick switching times, making it ideal for high-frequency operations.
4. Thermal Performance: Features good thermal conductivity, facilitating better heat management.
5. Soft Recovery: Minimizes reverse recovery issues, reducing electromagnetic interference (EMI).
6. Compact Package: Available in TO-220 and DPAK packages, optimizing space in designs.
7. High Surge Capability: Can withstand high surge currents, improving reliability in challenging conditions.
These features make the STPSC8H065B-TR suitable for applications in power supplies, motor drives, and renewable energy systems.

Package

The STPSC8H065B-TR is packaged in a TO-220AB package type, which is a robust, insulated package designed for power applications, allowing for effective heat dissipation and ease of mounting on heatsinks.

Pinout

The STPSC8H065B-TR is a 2nd generation Schottky barrier diode with a pin count of 3. It is housed in a DPAK package.
Pin functions are as follows:
1. Pin 1 (Anode): This pin is connected to the anode of the diode.
2. Pin 2 (Cathode): This pin is connected to the cathode of the diode.
3. Pin 3 (Tab): This pin is typically connected to the cathode and serves as a thermal and electrical connection.
The device is designed for high efficiency and fast switching applications, boasting a reverse voltage rating of 65V and a forward current rating of up to 8A. The STPSC8H065B-TR is suitable for power conversion, rectification, and other applications requiring low forward voltage drop and high reliability.

Manufacturer

The STPSC8H065B-TR is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of electronic components, including integrated circuits, microcontrollers, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and communication. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in technology and commitment to sustainability. The STPSC8H065B-TR is a 650V, 8A silicon carbide (SiC) Schottky diode, which is used in applications requiring high efficiency and thermal performance.

Application

The STPSC8H065B-TR is a high-voltage silicon carbide (SiC) Schottky diode used in various applications, including power supply circuits, solar inverters, electric vehicles, industrial motor drives, and renewable energy systems. Its low forward voltage drop and fast switching capabilities enhance efficiency in energy conversion and management.

Equivalent

The STPSC8H065B-TR is a 650V Schottky barrier diode. Equivalent products include:
1. MB6S-650-06 - from other manufacturers.
2. SRD650 - Schottky diodes with similar ratings.
3. STPS8H065 - similar STMicroelectronics product.
4. B130 - for lower current applications.
Always verify specifications for exact match in voltage, current ratings, and package type.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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Payment Methods

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