STPSC6H065B-TR

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STPSC6H065B-TR

DIODE SIL CARBIDE 650V 6A DPAK

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仕様

Part Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 6A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Capacitance @ Vr, F 300pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -40°C ~ 175°C
Base Product Number STPSC6
Reverse Recovery Time (trr) 0 ns

概要

Description

The STPSC6H065B-TR is a high-performance Schottky silicon carbide (SiC) diode designed for efficiency in power applications. With a reverse voltage rating of 650V and a forward current rating of 6A, it offers low forward voltage drop and fast switching capabilities, making it ideal for applications such as photovoltaic inverters, power supplies, and motor drives. The SiC technology enhances thermal conductivity and reduces switching losses compared to traditional silicon diodes, allowing for improved thermal management and compact designs. Its rugged construction ensures reliability in harsh environments. The device is packaged in a TO-220 format, facilitating easy integration into existing systems. Overall, the STPSC6H065B-TR is well-suited for engineers looking to enhance performance and efficiency in high-voltage applications.

Features

The STPSC6H065B-TR is a 650V, 6A Schottky diode specifically designed for high efficiency in power applications. Key features include:
1. High Voltage Rating: Operates up to 650V, suitable for various high-voltage applications.
2. Low Forward Voltage Drop: Ensures minimal conduction losses, enhancing energy efficiency.
3. Fast Switching Speed: Reduces reverse recovery time, resulting in improved performance in high-frequency applications.
4. Thermal Performance: Designed with a robust package that facilitates effective heat dissipation.
5. AEC-Q101 Qualification: Suitable for automotive applications, ensuring reliability under harsh conditions.
6. Low Leakage Current: Minimizes losses during off-state, contributing to overall power efficiency.
7. High Surge Capability: Can withstand high surge currents, enhancing durability in transient conditions.
This device is ideal for use in power supplies, converters, and motor drive applications, where efficiency and reliability are critical.

Package

The STPSC6H065B-TR is packaged in a DPAK (TO-252) configuration. This surface-mount package is designed for efficient thermal dissipation and robust performance in power management applications.

Pinout

The STPSC6H065B-TR is a 600V, 6A Schottky diode. It is housed in the TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Anode (A): This is the positive terminal where the current enters.
2. Cathode (K): This is the negative terminal where the current exits. It is also marked with a stripe on the diode.
3. Tab: This is used for heat dissipation and is connected to the cathode.
The STPSC6H065B-TR is designed for applications requiring fast switching and low forward voltage drop, making it suitable for power supplies, inverter circuits, and automotive applications. Its features include high surge current capability and excellent thermal performance.

Manufacturer

The STPSC6H065B-TR is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including analog and digital ICs, microcontrollers, and power devices. The company serves various sectors, including automotive, industrial, consumer electronics, and communication. With a strong focus on innovation and sustainability, STMicroelectronics is recognized for its advancements in technologies such as power management, embedded processing, and smart sensing, positioning itself as a key player in the semiconductor industry.

Application

The STPSC6H065B-TR is a 650V, 6A silicon carbide (SiC) Schottky diode, primarily used in applications such as power supplies, electric vehicles, renewable energy systems, industrial motor drives, and battery chargers. Its high efficiency, fast switching capabilities, and thermal stability make it suitable for high-frequency and high-temperature environments, enhancing overall system performance.

Equivalent

The STPSC6H065B-TR is a 650V, 6A Schottky silicon carbide (SiC) diode. Equivalent products include:
1. Cree C3D06065A - 650V, 6A SiC Schottky diode.
2. ON Semiconductor MBRF6H65 - 650V, 6A Schottky diode.
3. Infineon IDH06G65C5 - 650V, 6A SiC Schottky diode.
Always verify specifications for compatibility in your specific application.

出荷

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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