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STP43N60DM2
MOSFET N-CH 600V 34A TO220
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- データシート STP43N60DM2 DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ DM2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 93mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概要
Description
The STP43N60DM2 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 43A, making it suitable for high-power switching and amplifier applications. The device boasts a low on-resistance (R_DS(on)) of around 0.19 ohms, enhancing efficiency by minimizing power loss during operation.
With a maximum gate-source voltage (V_GS) of ±20V, it facilitates easy interfacing with standard driving circuits. The STP43N60DM2 is well-suited for applications such as power supplies, inverters, and motor drives due to its robust performance and thermal management capabilities.
This MOSFET is packaged in a TO-220 form factor, allowing for effective heat dissipation and ease of handling in various electronic designs. Its fast switching speeds and high thermal stability contribute to reliable operation in demanding environments. Overall, the STP43N60DM2 is a versatile component for engineers and designers working on high-voltage electronic systems.
With a maximum gate-source voltage (V_GS) of ±20V, it facilitates easy interfacing with standard driving circuits. The STP43N60DM2 is well-suited for applications such as power supplies, inverters, and motor drives due to its robust performance and thermal management capabilities.
This MOSFET is packaged in a TO-220 form factor, allowing for effective heat dissipation and ease of handling in various electronic designs. Its fast switching speeds and high thermal stability contribute to reliable operation in demanding environments. Overall, the STP43N60DM2 is a versatile component for engineers and designers working on high-voltage electronic systems.
Features
The STP43N60DM2 is a N-channel MOSFET designed for high-performance applications. Here are its key features:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) of 43A at a junction temperature of 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.14 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for effective control with standard logic levels.
5. Fast Switching: The device is designed for high-speed switching applications, improving efficiency in power conversion and motor control.
6. Thermal Performance: It features a robust package (TO-220) that enables effective heat dissipation, facilitating high thermal performance.
7. Applications: Commonly used in switch mode power supplies (SMPS), inverters, and other power management systems.
These features make the STP43N60DM2 ideal for various industrial and consumer applications requiring reliable and efficient switching.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) of 43A at a junction temperature of 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.14 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for effective control with standard logic levels.
5. Fast Switching: The device is designed for high-speed switching applications, improving efficiency in power conversion and motor control.
6. Thermal Performance: It features a robust package (TO-220) that enables effective heat dissipation, facilitating high thermal performance.
7. Applications: Commonly used in switch mode power supplies (SMPS), inverters, and other power management systems.
These features make the STP43N60DM2 ideal for various industrial and consumer applications requiring reliable and efficient switching.
Package
The STP43N60DM2 is typically packaged in a TO-220 form factor. This package type enables efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The STP43N60DM2 is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage between the gate and source allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the reference point for the gate voltage and is connected to the ground in typical applications.
The STP43N60DM2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 43A. It is commonly used in power supply circuits and motor control applications due to its efficiency and thermal performance.
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage between the gate and source allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the reference point for the gate voltage and is connected to the ground in typical applications.
The STP43N60DM2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 43A. It is commonly used in power supply circuits and motor control applications due to its efficiency and thermal performance.
Manufacturer
The STP43N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of electronic components, including power transistors, integrated circuits, and sensors. The company serves various markets such as automotive, industrial, consumer electronics, and communication. With a focus on innovation and sustainability, STMicroelectronics is known for its high-performance products and commitment to developing advanced technologies that enhance energy efficiency and environmental responsibility.
Application
The STP43N60DM2 is a N-channel MOSFET commonly used in high-voltage and high-current applications. Its primary application areas include power supplies, DC-DC converters, motor drives, and switching applications in industrial equipment. It is also suitable for automotive applications, lighting control, and renewable energy systems, such as solar inverters. Its ability to handle high temperatures and voltages makes it ideal for efficient power management in various electronic devices.
Equivalent
The STP43N60DM2 is a N-channel MOSFET with a rating of 600V, 43A, and RDS(on) of 0.20 ohms. Equivalent products include:
1. IRFHE43 (Infineon)
2. STP43N60 (STMicroelectronics)
3. FQPF43N60 (Fairchild Semiconductor)
4. MTP43N60 (ON Semiconductor)
Always check datasheets for specific parameters to ensure compatibility.
1. IRFHE43 (Infineon)
2. STP43N60 (STMicroelectronics)
3. FQPF43N60 (Fairchild Semiconductor)
4. MTP43N60 (ON Semiconductor)
Always check datasheets for specific parameters to ensure compatibility.
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