STP34NM60N

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STP34NM60N

MOSFET N-CH 600V 29A TO220-3

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仕様

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 29A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 105mOhm @ 14.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 80 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2722 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

概要

Description

The STP34NM60N is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 34A, making it suitable for use in power electronics such as switch-mode power supplies, inverters, and motor control circuits.
Key features of the STP34NM60N include a low on-resistance (R_DS(on)), which minimizes power losses during operation, and a fast switching speed, allowing for efficient control in high-frequency applications. Its thermal resistance characteristics enable effective heat dissipation, ensuring reliability and performance.
The device is housed in a TO-220 package, facilitating easy heatsinking and mounting in various applications. It is ideal for designers looking for a reliable component for energy-efficient systems operating at high voltages.

Features

The STP34NM60N is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous current capacity of 34A at 25°C.
3. R_DS(on): Low on-resistance, typically around 0.34 ohms, which reduces conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with standard logic levels.
5. Package Type: Available in TO-220 and DPAK packages, allowing for easy heatsinking and thermal management.
6. Fast Switching: Suitable for high-frequency applications, enhancing performance in switching power supplies and motor control.
7. Thermal Resistance: Offers a low thermal resistance junction-to-case, facilitating better heat dissipation.
These features make the STP34NM60N ideal for applications like power converters, inverters, and other high-voltage switching tasks.

Package

The STP34NM60N is packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The STP34NM60N is a power MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here regulates the flow of current between the drain and source.
2. Drain (D) - This is the terminal through which current enters the MOSFET when it is in the "on" state.
3. Source (S) - This terminal allows current to exit the MOSFET when it is conducting.
The STP34NM60N is designed for high-voltage applications, rated at 600V and capable of handling continuous current up to 34A. It is commonly used in power management, switching applications, and as a part of power conversion circuits.

Manufacturer

The STP34NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor devices, including power management, microcontrollers, sensors, and analog ICs. The company serves various industries, such as automotive, industrial, consumer electronics, and communication, focusing on innovation and technology development. Headquartered in Geneva, Switzerland, STMicroelectronics operates worldwide, providing advanced solutions that support a range of applications from energy-efficient systems to smart devices.

Application

The STP34NM60N is a 600V N-channel MOSFET primarily used in power applications, including switch-mode power supplies (SMPS), motor drives, and inverters. Its high voltage and current handling capabilities make it suitable for applications in automotive electronics, lighting control, and industrial automation. Additionally, it is effective in circuits requiring high efficiency and fast switching, such as DC-DC converters and energy management systems.

Equivalent

The STP34NM60N is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. FQP30N60
3. STP30NF06
4. MTP30N60
5. APT30M60J
Ensure to check specifications such as voltage rating, current rating, and package type for compatibility.

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DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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