画像は参照用のみです。
STP20NM60
MOSFET N-CH 600V 20A TO220AB
- メーカー
- Mfr。パート #STP20NM60
- パッケージ
- データシート STP20NM60 DataSheet
- 在庫中2087
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Series | MDmesh™ |
| Part Status | Active |
| Base Product Number | STP20 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
概要
Description
The STP20NM60 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. With a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 20A, it is suitable for power management in various electronic circuits, including switch-mode power supplies, motor drives, and lighting control.
Key features of the STP20NM60 include low on-resistance (RDS(on)), which reduces power losses and improves efficiency, and a fast switching capability that enhances performance in high-frequency applications. Its TO-220 package allows for effective heat dissipation, making it ideal for applications that require thermal management.
This device is commonly used in automotive, industrial, and consumer electronics due to its reliability and robust performance. Overall, the STP20NM60 is a versatile choice for engineers seeking efficient and effective solutions in high-voltage power switching applications.
Key features of the STP20NM60 include low on-resistance (RDS(on)), which reduces power losses and improves efficiency, and a fast switching capability that enhances performance in high-frequency applications. Its TO-220 package allows for effective heat dissipation, making it ideal for applications that require thermal management.
This device is commonly used in automotive, industrial, and consumer electronics due to its reliability and robust performance. Overall, the STP20NM60 is a versatile choice for engineers seeking efficient and effective solutions in high-voltage power switching applications.
Features
The STP20NM60 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS), making it suitable for high-voltage circuits.
2. Current Handling: Continuous drain current (I_D) of 20A, allowing it to manage substantial loads.
3. On-Resistance: Low R_DS(on) of 0.24 ohms at V_GS = 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: V_GS(th) typically around 2-4V, enabling efficient switching.
5. Fast Switching: Capable of high-speed operation due to low gate charge (Q_g), enhancing overall efficiency.
6. TO-220 Package: Available in a robust TO-220 package for effective thermal management and easy mounting.
7. Application Versatility: Commonly used in power supplies, motor drives, and other applications requiring high efficiency and reliability.
These attributes make the STP20NM60 a reliable choice for power management in various electronic devices.
1. Voltage Rating: 600V maximum drain-source voltage (V_DS), making it suitable for high-voltage circuits.
2. Current Handling: Continuous drain current (I_D) of 20A, allowing it to manage substantial loads.
3. On-Resistance: Low R_DS(on) of 0.24 ohms at V_GS = 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: V_GS(th) typically around 2-4V, enabling efficient switching.
5. Fast Switching: Capable of high-speed operation due to low gate charge (Q_g), enhancing overall efficiency.
6. TO-220 Package: Available in a robust TO-220 package for effective thermal management and easy mounting.
7. Application Versatility: Commonly used in power supplies, motor drives, and other applications requiring high efficiency and reliability.
These attributes make the STP20NM60 a reliable choice for power management in various electronic devices.
Package
The STP20NM60 is typically packaged in a TO-220 format. This package type is designed for high-power applications, allowing for effective heat dissipation and easy mounting on heatsinks.
Pinout
The STP20NM60 is a N-channel MOSFET designed for high-voltage applications. It features a total of three pins:
1. Gate (G) - Pin for controlling the MOSFET; it receives the voltage signal that turns the device on or off.
2. Drain (D) - Pin through which the current flows out of the MOSFET; it connects to the load.
3. Source (S) - Pin where the current enters the MOSFET; it typically connects to ground or the negative side of the voltage supply.
The STP20NM60 is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 20A. It is commonly used in applications such as switch mode power supplies, motor control, and inverters due to its high voltage and current handling capabilities.
1. Gate (G) - Pin for controlling the MOSFET; it receives the voltage signal that turns the device on or off.
2. Drain (D) - Pin through which the current flows out of the MOSFET; it connects to the load.
3. Source (S) - Pin where the current enters the MOSFET; it typically connects to ground or the negative side of the voltage supply.
The STP20NM60 is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 20A. It is commonly used in applications such as switch mode power supplies, motor control, and inverters due to its high voltage and current handling capabilities.
Manufacturer
The STP20NM60 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is a leading supplier of semiconductor solutions, providing a wide range of products including microcontrollers, sensors, analog ICs, and power transistors. The company serves various markets such as automotive, industrial, personal electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics focuses on innovation, sustainability, and advanced technology development, playing a significant role in the global semiconductor industry.
Application
The STP20NM60 is a high-voltage N-channel MOSFET primarily used in power electronics applications, including switching power supplies, motor drives, and industrial automation. Its features make it suitable for inverter circuits, lighting control, and energy conversion systems. Additionally, it is utilized in applications requiring high efficiency and reliability, such as DC-DC converters and electronic ballasts.
Equivalent
The STP20NM60 is a N-channel MOSFET with a 600V drain-source voltage rating and a 20A continuous drain current. Equivalent products include the IRF840, MTP20N60E, and FQP20N60. Ensure to check the specifications for on-resistance, gate threshold voltage, and package type to confirm compatibility for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M1I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25V1635FM2I
Macronix
-
MX29LV160DTTI-70G
Macronix