画像は参照用のみです。
STP11NM80
MOSFET N-CH 800V 11A TO220AB
- メーカー
- Mfr。パート #STP11NM80
- パッケージ
- データシート STP11NM80 DataSheet
- 在庫中9764
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Series | MDmesh™ |
| Part Status | Active |
| Base Product Number | STP11 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
概要
Description
The STP11NM80 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a high breakdown voltage of 800V and a continuous drain current rating of 11A, making it suitable for high-voltage power switching applications. The device has low on-resistance (R_DS(on)), which enhances efficiency and reduces power losses during operation.
Key characteristics include fast switching speeds and the ability to handle high power, making it ideal for use in various applications such as power supplies, motor drives, and inverters. The STP11NM80 is often used in conjunction with other components in power electronics designs to improve overall system performance.
It comes in a standard TO-220 package, which facilitates easy thermal management and mounting. Overall, the STP11NM80 is a reliable choice for engineers seeking efficient and robust solutions in high-voltage electronic circuits.
Key characteristics include fast switching speeds and the ability to handle high power, making it ideal for use in various applications such as power supplies, motor drives, and inverters. The STP11NM80 is often used in conjunction with other components in power electronics designs to improve overall system performance.
It comes in a standard TO-220 package, which facilitates easy thermal management and mounting. Overall, the STP11NM80 is a reliable choice for engineers seeking efficient and robust solutions in high-voltage electronic circuits.
Features
The STP11NM80 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 800V, making it suitable for high-voltage applications.
2. Current Rating: 11A continuous drain current, allowing it to handle substantial loads.
3. RDS(on): Low on-state resistance (around 0.9 ohms), which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: Typically between 2-4V, facilitating easy driving with low gate voltage.
5. Fast Switching Speed: Suitable for high-frequency applications, improving performance in switching converters.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility in thermal management and mounting options.
7. Safe Operating Area (SOA): Ensures reliable operation under specified conditions.
These features make the STP11NM80 ideal for use in power supplies, motor control, and various switching applications.
1. Voltage Rating: 800V, making it suitable for high-voltage applications.
2. Current Rating: 11A continuous drain current, allowing it to handle substantial loads.
3. RDS(on): Low on-state resistance (around 0.9 ohms), which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: Typically between 2-4V, facilitating easy driving with low gate voltage.
5. Fast Switching Speed: Suitable for high-frequency applications, improving performance in switching converters.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility in thermal management and mounting options.
7. Safe Operating Area (SOA): Ensures reliable operation under specified conditions.
These features make the STP11NM80 ideal for use in power supplies, motor control, and various switching applications.
Package
The STP11NM80 is typically packaged in a TO-220 format. This package type is designed for power transistors, providing efficient heat dissipation and ease of mounting to heatsinks for effective thermal management.
Pinout
The STP11NM80 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the MOSFET.
The STP11NM80 is designed for applications requiring high voltage (up to 800V) and high current (up to 11A), making it suitable for power switching applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the MOSFET.
The STP11NM80 is designed for applications requiring high voltage (up to 800V) and high current (up to 11A), making it suitable for power switching applications.
Manufacturer
The STP11NM80 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various markets, including automotive, industrial, personal electronics, communications, and consumer applications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and is recognized for its innovations in microelectronics and commitment to sustainability. The STP11NM80 specifically is a power MOSFET that is typically used in applications such as power management and conversion, making it suitable for various electronic devices and systems.
Application
The STP11NM80 is an N-channel MOSFET used in various applications, including power supplies, motor control, and lighting systems. Its high voltage and current handling capabilities make it suitable for industrial equipment, switch-mode power supplies (SMPS), and high-efficiency converters. Additionally, it can be applied in automotive electronics and home appliances for efficient switching and amplification in power management circuits.
Equivalent
The STP11NM80 is an N-channel MOSFET with a 80V rating and a maximum continuous drain current of 11A. Equivalent products include the IRF840, FQP13N80C, and MTP11N80E. Always check the datasheet for specifications like RDS(on), gate threshold voltage, and package type to ensure compatibility with your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V2033FM1I
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix