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STP110N8F6
MOSFET N-CH 80V 110A TO220
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- Mfr。パート #STP110N8F6
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- データシート STP110N8F6 DataSheet
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仕様
| Series | STripFET™ F6 |
| Part Status | Obsolete |
| Base Product Number | STP110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 40 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
概要
Description
The STP110N8F6 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (Vds) of 80V and a continuous drain current (Id) rating of 110A, making it suitable for switching and amplifying electronic signals in a variety of circuits.
Key specifications include a low on-resistance (Rds(on)) of around 0.09 ohms, which enhances efficiency by minimizing power losses during operation. The STP110N8F6 is often used in power supply circuits, motor control, and other applications requiring high current handling and thermal performance.
Its package type, typically a TO-220 or similar, allows for effective heat dissipation, supporting reliable performance in demanding environments. Overall, this MOSFET is valued for its robustness, efficiency, and versatility in various electronic designs.
Key specifications include a low on-resistance (Rds(on)) of around 0.09 ohms, which enhances efficiency by minimizing power losses during operation. The STP110N8F6 is often used in power supply circuits, motor control, and other applications requiring high current handling and thermal performance.
Its package type, typically a TO-220 or similar, allows for effective heat dissipation, supporting reliable performance in demanding environments. Overall, this MOSFET is valued for its robustness, efficiency, and versatility in various electronic designs.
Features
The STP110N8F6 is a power MOSFET designed for high-efficiency applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: 80V maximum drain-source voltage (V_DS).
3. Current Rating: Continuous drain current of 110A, providing high current handling capability.
4. R_DS(on): Low on-resistance of about 6.5 mΩ, which minimizes power loss and improves efficiency.
5. Gate-Source Voltage: Rated at ±20V, allowing for versatile gate drive configurations.
6. Package: Available in DPAK or TO-220, which aids in thermal dissipation.
7. Switching Speed: Fast switching capabilities, making it suitable for applications like DC-DC converters and power management systems.
8. Applications: Ideal for automotive, industrial, and consumer electronics where efficient power conversion is crucial.
These attributes make the STP110N8F6 a reliable choice for engineers seeking robust performance in power electronic designs.
1. Type: N-channel MOSFET.
2. Voltage Rating: 80V maximum drain-source voltage (V_DS).
3. Current Rating: Continuous drain current of 110A, providing high current handling capability.
4. R_DS(on): Low on-resistance of about 6.5 mΩ, which minimizes power loss and improves efficiency.
5. Gate-Source Voltage: Rated at ±20V, allowing for versatile gate drive configurations.
6. Package: Available in DPAK or TO-220, which aids in thermal dissipation.
7. Switching Speed: Fast switching capabilities, making it suitable for applications like DC-DC converters and power management systems.
8. Applications: Ideal for automotive, industrial, and consumer electronics where efficient power conversion is crucial.
These attributes make the STP110N8F6 a reliable choice for engineers seeking robust performance in power electronic designs.
Package
The STP110N8F6 is typically available in a TO-220 package type. This package is characterized by its robust construction, allowing for efficient heat dissipation and ease of mounting on heatsinks, making it suitable for power applications.
Pinout
The STP110N8F6 is a N-channel MOSFET with a total of 6 pins. Its main function is to serve as a switching device in various applications, including power management, motor control, and DC-DC converters. The device is designed to handle high current and voltage, making it suitable for efficient power switching.
Here's a brief breakdown of the pin configuration:
1. Gate (G): Controls the MOSFET operation; applying voltage here turns the MOSFET on.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
The remaining pins may include additional features for improved performance or reliability in specific applications. The STP110N8F6 is known for its low on-resistance and high-speed switching capabilities, making it a popular choice in various electronic circuits.
Here's a brief breakdown of the pin configuration:
1. Gate (G): Controls the MOSFET operation; applying voltage here turns the MOSFET on.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
The remaining pins may include additional features for improved performance or reliability in specific applications. The STP110N8F6 is known for its low on-resistance and high-speed switching capabilities, making it a popular choice in various electronic circuits.
Manufacturer
The STP110N8F6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor solutions, including integrated circuits and discrete devices. The company serves various sectors, including automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovative products and technologies, focusing on energy efficiency, connectivity, and smart applications. Founded in 1987, the company has established itself as a key player in the semiconductor industry, with a strong emphasis on research and development to drive advancements in electronic components.
Application
The STP110N8F6 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and switch-mode power supplies. It is suitable for high-efficiency power switching due to its low on-resistance and high current handling capability. Additionally, it can be employed in automotive applications, lighting control, and other electronic circuits requiring reliable switching performance.
Equivalent
The STP110N8F6 is an N-channel MOSFET. Equivalent products include:
1. IRF110N8
2. FQP110N8
3. NTD110N8
4. BSS110N8
5. LSN110N8
Check datasheets for specifications to ensure compatibility in your application.
1. IRF110N8
2. FQP110N8
3. NTD110N8
4. BSS110N8
5. LSN110N8
Check datasheets for specifications to ensure compatibility in your application.
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