STN1NK60Z

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STN1NK60Z

MOSFET N-CH 600V 300MA SOT223

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 300mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15Ohm @ 400mA, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 6.9 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 94 pF @ 25 V
PowerDissipation(Max) 3.3W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223

概要

Description

The STN1NK60Z is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and performance in various electronic applications. Specifically, it is a N-channel MOSFET, which means it conducts when a positive voltage is applied to its gate terminal relative to its source terminal.
This device is designed to handle high voltages and currents, making it suitable for power management tasks, such as in DC-DC converters, motor drives, and renewable energy systems. Its low on-resistance allows for minimal power loss during operation, enhancing overall system efficiency.
Additionally, the STN1NK60Z features fast switching capabilities, which is crucial for applications requiring quick response times. It is often housed in a TO-220 package, providing effective heat dissipation.
Engineers select this component for its reliability, thermal performance, and robust electrical characteristics, which are essential for modern electronic devices and power systems.

Features

The STN1NK60Z is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents (I_D) typically around 10A, depending on the thermal conditions.
3. R_DS(on): It boasts a low on-resistance, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is designed for low voltage drive, facilitating easy interfacing with low-voltage control circuits.
5. Thermal Performance: It features a robust thermal resistance design, allowing for effective heat dissipation.
6. Package Type: The device is commonly available in TO-220 or similar packages, providing ease of mounting and heat management.
These features make the STN1NK60Z suitable for applications in power supplies, motor drives, and other high-efficiency power conversion systems.

Package

The STN1NK60Z is packaged in a TO-220 format, which is a type of standardized package used for power semiconductor devices. This package allows for effective heat dissipation and easy mounting on heatsinks.

Pinout

The STN1NK60Z is a N-channel MOSFET with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): This pin is where the current flows into the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where current flows out of the MOSFET. It usually connects to ground or the negative side of the power supply.
The STN1NK60Z is designed for applications such as power management, switching, and motor control, with a maximum drain-source voltage of 600V and a maximum continuous drain current of 1A.

Manufacturer

The STN1NK60Z is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. STMicroelectronics designs and produces a wide range of semiconductor devices, including power management ICs, microcontrollers, and sensors, serving diverse industries such as automotive, industrial, consumer electronics, and telecommunications. The company is well-known for its innovation in technology and commitment to sustainability, playing a significant role in the development of solutions that drive the Internet of Things (IoT), smart mobility, and energy efficiency.

Application

The STN1NK60Z is a high-voltage N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drives, and power supply circuits. It is suitable for industrial automation, renewable energy systems, electric vehicles, and consumer electronics due to its efficiency and ability to handle high currents and voltages.

Equivalent

The STN1NK60Z is a MOSFET transistor with an N-channel configuration. Equivalent products include the IRF840, MTP50N60E, and STP60NF06. Always verify specifications like voltage, current, and Rds(on) to ensure compatibility for your specific application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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