STLD200N4F6AG

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STLD200N4F6AG

MOSFET N-CH 40V 120A POWERFLAT

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  • Mfr。パート #STLD200N4F6AG
  • パッケージ PowerWDFN-8
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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, STripFET™ F6
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6.5V, 10V
RdsOn(Max)@IdVgs 1.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 172 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10700 pF @ 10 V
PowerDissipation(Max) 158W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerFlat™ (5x6) Dual Side

概要

Description

The STLD200N4F6AG is a high-performance N-channel MOSFET designed for various applications, including power management, automotive, and industrial systems. It features a low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation. With a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) rating of 200A, the device is suitable for high-current applications. The MOSFET comes in a TO-220 package, facilitating easy heat dissipation and integration into different circuit designs.
Additionally, the STLD200N4F6AG showcases fast switching capabilities, making it ideal for use in switch-mode power supplies (SMPS) and motor control applications. Its robust construction and thermal performance ensure reliability under demanding conditions. Overall, the STLD200N4F6AG is a versatile component for engineers seeking efficient power solutions in modern electronic designs.

Features

The STLD200N4F6AG is a high-performance N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 200A, allowing for high-power handling capabilities.
3. R_DS(on): It features a low on-resistance (R_DS(on)), typically around 4.6 mΩ, which minimizes power losses during operation.
4. Fast Switching: The MOSFET is optimized for rapid switching, enhancing efficiency in applications such as DC-DC converters and power management.
5. Thermal Performance: It offers good thermal stability, with a maximum junction temperature (T_j) of 175°C, enabling reliable operation in demanding environments.
6. Package: Available in a TO-220 or similar package, facilitating efficient heat dissipation.
Overall, the STLD200N4F6AG is well-suited for high-efficiency power applications in automotive, industrial, and consumer electronics.

Package

The STLD200N4F6AG is packaged in a DPAK (TO-252) package type.

Pinout

The STLD200N4F6AG is a dual N-channel MOSFET with a pin count of 8. It is designed for power management applications, suitable for load switching and DC-DC converters.
Pin Configuration:
1. Gate1 - Controls the switching of MOSFET 1.
2. Drain1 - Connects to the load or output for MOSFET 1.
3. Source1 - Connects to ground or the source for MOSFET 1.
4. Gate2 - Controls the switching of MOSFET 2.
5. Drain2 - Connects to the load or output for MOSFET 2.
6. Source2 - Connects to ground or the source for MOSFET 2.
7. N/C - Not connected (can be left floating).
8. N/C - Not connected (can be left floating).
This device features low on-resistance, fast switching capabilities, and is commonly used in battery management and power supply circuits. Always refer to the manufacturer's datasheet for detailed specifications and applications.

Manufacturer

The STLD200N4F6AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of electronic components, including integrated circuits, microcontrollers, and power devices, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in semiconductor solutions and focuses on sustainable technology development. It has a significant presence in the global market and is headquartered in Geneva, Switzerland.

Application

The STLD200N4F6AG is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drivers, and power supplies, where efficient switching and low on-resistance are crucial. It is also suitable for automotive applications, battery management systems, and industrial automation, contributing to energy efficiency and improved thermal performance in various electronic circuits.

Equivalent

The STLD200N4F6AG is a MOSFET, specifically an N-channel device. Equivalent products include the Infineon BSC099N04LS, the ON Semiconductor NTPF100N06, and the Vishay SiN20-4N. Always verify specifications such as voltage, current ratings, and package type when selecting an equivalent part.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

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