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STL4N80K5
MOSFET N-CH 800V 2.5A POWERFLAT
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- Mfr。パート #STL4N80K5
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- データシート STL4N80K5 DataSheet
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仕様
| Series | SuperMESH5™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (5x6) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | STL4N80 |
概要
Description
The STL4N80K5 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) rating of 4A at a temperature of 25°C, making it suitable for power management in various circuits like switch-mode power supplies, motor drivers, and other high-voltage applications.
Key specifications include a low on-state resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The device operates at high temperatures, typically up to 150°C, ensuring reliability in demanding environments. Its high-speed switching capabilities allow for efficient operation in applications requiring rapid turn-on and turn-off cycles.
The STL4N80K5 is often housed in a TO-220 package, providing good thermal performance and ease of heat dissipation. Users must consider proper heatsinking and thermal management in their designs to maximize performance and longevity. Overall, this MOSFET serves as a robust solution for engineers working on high-voltage electronic systems.
Key specifications include a low on-state resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The device operates at high temperatures, typically up to 150°C, ensuring reliability in demanding environments. Its high-speed switching capabilities allow for efficient operation in applications requiring rapid turn-on and turn-off cycles.
The STL4N80K5 is often housed in a TO-220 package, providing good thermal performance and ease of heat dissipation. Users must consider proper heatsinking and thermal management in their designs to maximize performance and longevity. Overall, this MOSFET serves as a robust solution for engineers working on high-voltage electronic systems.
Features
The STL4N80K5 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It offers a continuous drain current (I_D) of 4A, allowing it to manage significant power levels.
3. Low On-Resistance: With a typical R_DS(on) of 0.6 ohms at a gate-source voltage (V_GS) of 10V, it ensures efficient operation and reduced power losses.
4. Fast Switching Speed: The device is designed for fast switching, which enhances efficiency in switching applications.
5. Thermal Resistance: It features a low thermal resistance, providing better heat dissipation and reliability in high-temperature environments.
6. Package Type: The STL4N80K5 typically comes in a TO-220 package, which facilitates easy mounting and heat management.
These characteristics make the STL4N80K5 suitable for use in power supplies, motor drives, and other electronic circuits requiring robust performance.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It offers a continuous drain current (I_D) of 4A, allowing it to manage significant power levels.
3. Low On-Resistance: With a typical R_DS(on) of 0.6 ohms at a gate-source voltage (V_GS) of 10V, it ensures efficient operation and reduced power losses.
4. Fast Switching Speed: The device is designed for fast switching, which enhances efficiency in switching applications.
5. Thermal Resistance: It features a low thermal resistance, providing better heat dissipation and reliability in high-temperature environments.
6. Package Type: The STL4N80K5 typically comes in a TO-220 package, which facilitates easy mounting and heat management.
These characteristics make the STL4N80K5 suitable for use in power supplies, motor drives, and other electronic circuits requiring robust performance.
Package
The STL4N80K5 is typically available in a TO-220 package type, which is a metal-can package designed for power transistors, providing effective thermal dissipation.
Pinout
The STL4N80K5 is an N-channel power MOSFET with a total of 4 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The pin where the load is connected; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply; it is the exit point for the current when the MOSFET is on.
4. Tab/Heatsink: While not a pin in the traditional sense, the tab is used for heat dissipation and may also be connected to the source.
This device is designed for high-voltage applications, offering a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 4A.
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The pin where the load is connected; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply; it is the exit point for the current when the MOSFET is on.
4. Tab/Heatsink: While not a pin in the traditional sense, the tab is used for heat dissipation and may also be connected to the source.
This device is designed for high-voltage applications, offering a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 4A.
Manufacturer
The STL4N80K5 is manufactured by STMicroelectronics, a global semiconductor company that designs, develops, and supplies a wide range of semiconductor products. STMicroelectronics is known for its innovative solutions in various applications, including automotive, industrial, personal electronics, and communication equipment. The company operates in multiple sectors, focusing on energy efficiency, connectivity, and smart technologies. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is one of the largest semiconductor companies in the world, emphasizing sustainability and advanced manufacturing techniques in its operations.
Application
The STL4N80K5 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies, motor drives, and inverters for renewable energy systems. Additionally, it is suitable for use in industrial automation, lighting control, and consumer electronics where efficient power management is crucial.
Equivalent
The STL4N80K5 is an N-channel MOSFET. Equivalent products include the STP4N80K5, IRF840, and FQP40N80. Check specific datasheets for exact parameters like voltage, current, and Rds(on) for compatibility.
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