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STL45N65M5
MOSFET N-CH 650V 22.5A PWRFLAT
- メーカー
- Mfr。パート #STL45N65M5
- パッケージ PowerFLAT-8
- データシート STL45N65M5 DataSheet
- 在庫中2340
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 3.8A (Ta), 22.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 86mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3470 pF @ 100 V |
| PowerDissipation(Max) | 2.8W (Ta), 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerFLAT™ (8x8) |
概要
Description
The STL45N65M5 is a high-voltage N-channel MOSFET manufactured by STMicroelectronics, designed for power electronic applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 45A, making it suitable for high-efficiency power switch applications.
Key specifications include a low on-resistance (Rds(on)) typically around 0.40 ohms, which contributes to reduced power losses and improved thermal performance. The device is optimized for use in switch-mode power supplies, inverters, and other high-frequency applications, allowing for efficient energy conversion.
The STL45N65M5 has a gate threshold voltage (Vgs(th)) ranging from 2V to 4V, ensuring it can be driven effectively in various circuit designs. Its fast switching capabilities and robust construction enhance its reliability under high-stress conditions. The package is typically available in TO-220, making it easy to integrate into existing designs. Overall, the STL45N65M5 is a versatile choice for engineers seeking reliable performance in demanding applications.
Key specifications include a low on-resistance (Rds(on)) typically around 0.40 ohms, which contributes to reduced power losses and improved thermal performance. The device is optimized for use in switch-mode power supplies, inverters, and other high-frequency applications, allowing for efficient energy conversion.
The STL45N65M5 has a gate threshold voltage (Vgs(th)) ranging from 2V to 4V, ensuring it can be driven effectively in various circuit designs. Its fast switching capabilities and robust construction enhance its reliability under high-stress conditions. The package is typically available in TO-220, making it easy to integrate into existing designs. Overall, the STL45N65M5 is a versatile choice for engineers seeking reliable performance in demanding applications.
Features
The STL45N65M5 is a high-voltage N-channel MOSFET designed for various applications, including power converters and motor drives. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage.
2. Current Rating: Continuous drain current up to 45A, with a pulsed current capability of 180A.
3. Low On-Resistance: R_DS(on) is typically 0.55Ω, providing efficient operation and reduced power loss.
4. Fast Switching Speed: Optimized for low gate charge (Q_g = 57nC), allowing for efficient switching in high-frequency applications.
5. Thermal Performance: Enhanced thermal management due to a high junction-to-ambient thermal resistance rating.
6. Package: Available in an TO-220 package, which provides effective heat dissipation.
7. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, suitable for logic-level driving.
These features make the STL45N65M5 ideal for applications requiring high efficiency and reliability in power management systems.
1. Voltage Rating: 650V maximum drain-source voltage.
2. Current Rating: Continuous drain current up to 45A, with a pulsed current capability of 180A.
3. Low On-Resistance: R_DS(on) is typically 0.55Ω, providing efficient operation and reduced power loss.
4. Fast Switching Speed: Optimized for low gate charge (Q_g = 57nC), allowing for efficient switching in high-frequency applications.
5. Thermal Performance: Enhanced thermal management due to a high junction-to-ambient thermal resistance rating.
6. Package: Available in an TO-220 package, which provides effective heat dissipation.
7. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, suitable for logic-level driving.
These features make the STL45N65M5 ideal for applications requiring high efficiency and reliability in power management systems.
Package
The STL45N65M5 is packaged in a TO-220 format. This package type is commonly used for power transistors, providing good thermal performance and heat dissipation capabilities.
Pinout
The STL45N65M5 is an N-channel MOSFET from STMicroelectronics, designed for high-performance applications. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): The drain pin is the output of the MOSFET, where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): The source pin is connected to the ground or the negative terminal of the power supply. It serves as the reference point for the gate voltage.
4. Body Diode (intrinsic): The MOSFET includes an intrinsic body diode that conducts in the reverse direction (from source to drain) when the drain is at a lower potential than the source.
5. Tab (Thermal): The tab is typically tied to the source and is used for heat dissipation.
This MOSFET is suitable for applications in power management, switch-mode power supplies, and motor control, with a maximum drain-source voltage of 650V.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): The drain pin is the output of the MOSFET, where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): The source pin is connected to the ground or the negative terminal of the power supply. It serves as the reference point for the gate voltage.
4. Body Diode (intrinsic): The MOSFET includes an intrinsic body diode that conducts in the reverse direction (from source to drain) when the drain is at a lower potential than the source.
5. Tab (Thermal): The tab is typically tied to the source and is used for heat dissipation.
This MOSFET is suitable for applications in power management, switch-mode power supplies, and motor control, with a maximum drain-source voltage of 650V.
Manufacturer
The STL45N65M5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various markets such as automotive, industrial, consumer electronics, and communications. They focus on innovation and sustainability, providing solutions that cater to the growing demand for energy efficiency and advanced technology in electronic applications.
Application
The STL45N65M5 is an N-channel MOSFET primarily used in power electronics applications. Its areas of application include power supplies, motor drives, converters, inverters, and renewable energy systems such as solar inverters. Its high voltage rating and low on-resistance make it suitable for energy-efficient designs in automotive, industrial, and consumer electronics.
Equivalent
The STL45N65M5 is a N-channel MOSFET. Equivalent products include the Infineon IRF3205, Vishay SI7466DP, and ON Semiconductor NTD5866N. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.
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