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STL36N55M5
MOSFET N-CH 550V 22.5A 4PWRFLAT
- メーカー
- Mfr。パート #STL36N55M5
- パッケージ
- データシート STL36N55M5 DataSheet
- 在庫中9899
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仕様
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 550 V |
| Current-ContinuousDrain(Id)@25°C | 22.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 90mOhm @ 16.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2670 pF @ 100 V |
| PowerDissipation(Max) | 2.8W (Ta), 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerFlat™ (8x8) HV |
概要
Description
The STL36N55M5 is a high-performance N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (V_DS) of 55 volts and a continuous drain current (I_D) of 36 amps, making it suitable for use in various power management circuits, such as DC-DC converters and motor drives.
This MOSFET offers low on-resistance (R_DS(on)), which reduces conduction losses and enhances efficiency in power applications. The device is available in a TO-220 package, providing good thermal performance and ease of mounting.
Key specifications include a threshold voltage (V_GS(th)) of 2 to 4 volts, a maximum gate-source voltage (V_GS) of ±20 volts, and a fast switching speed, which minimizes switching losses.
Overall, the STL36N55M5 is ideal for applications requiring high efficiency, such as renewable energy systems, electric vehicles, and industrial automation. Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines.
This MOSFET offers low on-resistance (R_DS(on)), which reduces conduction losses and enhances efficiency in power applications. The device is available in a TO-220 package, providing good thermal performance and ease of mounting.
Key specifications include a threshold voltage (V_GS(th)) of 2 to 4 volts, a maximum gate-source voltage (V_GS) of ±20 volts, and a fast switching speed, which minimizes switching losses.
Overall, the STL36N55M5 is ideal for applications requiring high efficiency, such as renewable energy systems, electric vehicles, and industrial automation. Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines.
Features
The STL36N55M5 is a high-power N-channel MOSFET designed for various applications, including automotive and industrial sectors. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Supports a continuous drain current (I_D) of up to 36A, making it suitable for high-current applications.
3. Low On-Resistance: It offers a low R_DS(on) typically around 0.014 ohms, ensuring efficient power conduction and minimal heat generation.
4. Fast Switching: The device is capable of fast switching speeds, enhancing performance in high-frequency applications.
5. Thermal Performance: It has a maximum junction temperature of 150°C, allowing operation in demanding thermal environments.
6. TO-220 Package: Comes in a robust TO-220 package, facilitating effective heat dissipation and ease of mounting.
7. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring compatibility with various drive circuits.
These characteristics make the STL36N55M5 suitable for power management, motor control, and other high-efficiency applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Supports a continuous drain current (I_D) of up to 36A, making it suitable for high-current applications.
3. Low On-Resistance: It offers a low R_DS(on) typically around 0.014 ohms, ensuring efficient power conduction and minimal heat generation.
4. Fast Switching: The device is capable of fast switching speeds, enhancing performance in high-frequency applications.
5. Thermal Performance: It has a maximum junction temperature of 150°C, allowing operation in demanding thermal environments.
6. TO-220 Package: Comes in a robust TO-220 package, facilitating effective heat dissipation and ease of mounting.
7. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring compatibility with various drive circuits.
These characteristics make the STL36N55M5 suitable for power management, motor control, and other high-efficiency applications.
Package
The STL36N55M5 is typically packaged in a TO-220 package type. This type is commonly used for power devices, providing good thermal performance and ease of mounting to heatsinks.
Pinout
The STL36N55M5 is a N-channel MOSFET with a pin count of 5. Its pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's switching; applies voltage to turn on the device.
2. Drain (D): Connects to the load; current flows from the drain to source when the MOSFET is on.
3. Source (S): Connected to ground or negative supply; current leaves the MOSFET from the source.
4. Body Diode (integrated): Provides intrinsic protection against reverse current.
5. NC (Not Connected): This pin is typically unused in the package.
The STL36N55M5 is designed for applications requiring high efficiency and fast switching, making it suitable for power management in various electronic circuits.
1. Gate (G): Controls the MOSFET's switching; applies voltage to turn on the device.
2. Drain (D): Connects to the load; current flows from the drain to source when the MOSFET is on.
3. Source (S): Connected to ground or negative supply; current leaves the MOSFET from the source.
4. Body Diode (integrated): Provides intrinsic protection against reverse current.
5. NC (Not Connected): This pin is typically unused in the package.
The STL36N55M5 is designed for applications requiring high efficiency and fast switching, making it suitable for power management in various electronic circuits.
Manufacturer
The STL36N55M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including integrated circuits, microcontrollers, and sensors, serving various industries such as automotive, consumer electronics, and industrial applications. The company is recognized for its innovation in power management, analog and digital solutions, and has a strong commitment to sustainability and environmental responsibility. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is one of the largest semiconductor companies in the world, with a diverse portfolio that addresses the growing demand for advanced technology in an evolving market.
Application
The STL36N55M5 is an N-channel MOSFET primarily used in power management applications. Its key areas include motor control, power supplies, DC-DC converters, and switching applications. It excels in high-efficiency designs due to its low on-resistance and fast switching capabilities, making it suitable for automotive, industrial, and consumer electronics applications.
Equivalent
The STL36N55M5 is a N-channel MOSFET. Equivalent products include the STP36NF55, IRF3205, and BSC36N55. Always verify specifications like voltage, current rating, and Rds(on) to ensure compatibility.
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