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STL23NM60ND
MOSFET N-CH 600V 19.5A POWERFLAT
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- Mfr。パート #STL23NM60ND
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仕様
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | FDmesh™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 19.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2050 pF @ 50 V |
| PowerDissipation(Max) | 3W (Ta), 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerFlat™ (8x8) HV |
概要
Description
The STL23NM60ND is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 23A, making it suitable for switching and amplification purposes in power supplies, motor drives, and other electronic circuits.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The device typically offers fast switching speeds, allowing for improved performance in high-frequency applications.
The STL23NM60ND is often packaged in a TO-220 or similar package, facilitating heat dissipation and easy integration into various circuits. It is widely used in industrial applications, consumer electronics, and renewable energy systems.
When designing circuits with the STL23NM60ND, it's essential to consider thermal management and gate drive requirements to ensure optimal performance and reliability.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The device typically offers fast switching speeds, allowing for improved performance in high-frequency applications.
The STL23NM60ND is often packaged in a TO-220 or similar package, facilitating heat dissipation and easy integration into various circuits. It is widely used in industrial applications, consumer electronics, and renewable energy systems.
When designing circuits with the STL23NM60ND, it's essential to consider thermal management and gate drive requirements to ensure optimal performance and reliability.
Features
The STL23NM60ND is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (VDS) of up to 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: It supports a continuous drain current (ID) of up to 23A, providing robust performance in various applications.
3. Low RDS(on): The MOSFET offers a low on-resistance (RDS(on)), typically around 0.23 ohms, enhancing efficiency and reducing power loss.
4. High Switching Speed: Designed for fast switching, it is ideal for applications in power supplies, converters, and inverters.
5. Thermal Performance: It has a maximum junction temperature of 150°C, allowing for reliable operation under thermal stress.
6. Package: Available in a TO-220 package for easy mounting and heat dissipation.
These features make the STL23NM60ND suitable for demanding applications in industrial and consumer electronics.
1. Voltage Rating: It can handle a drain-source voltage (VDS) of up to 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: It supports a continuous drain current (ID) of up to 23A, providing robust performance in various applications.
3. Low RDS(on): The MOSFET offers a low on-resistance (RDS(on)), typically around 0.23 ohms, enhancing efficiency and reducing power loss.
4. High Switching Speed: Designed for fast switching, it is ideal for applications in power supplies, converters, and inverters.
5. Thermal Performance: It has a maximum junction temperature of 150°C, allowing for reliable operation under thermal stress.
6. Package: Available in a TO-220 package for easy mounting and heat dissipation.
These features make the STL23NM60ND suitable for demanding applications in industrial and consumer electronics.
Package
The STL23NM60ND is packaged in a TO-220 form factor.
Pinout
The STL23NM60ND is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which current enters when the device is on.
4. Body Diode (usually internal) - Provides a path for current in the reverse direction, useful in applications like flyback circuits.
5. Tab (if applicable) - Often connected to the Source for heat dissipation.
The STL23NM60ND is typically used in applications such as power supplies, motor drives, and switching circuits due to its high voltage and current handling capabilities. Its maximum ratings include a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 23A.
1. Gate (G) - Controls the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which current enters when the device is on.
4. Body Diode (usually internal) - Provides a path for current in the reverse direction, useful in applications like flyback circuits.
5. Tab (if applicable) - Often connected to the Source for heat dissipation.
The STL23NM60ND is typically used in applications such as power supplies, motor drives, and switching circuits due to its high voltage and current handling capabilities. Its maximum ratings include a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 23A.
Manufacturer
The STL23NM60ND is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, analog devices, and power management systems. Founded in 1987 and headquartered in Geneva, Switzerland, the company serves various markets, including automotive, industrial, communication, and consumer electronics. STMicroelectronics is known for its commitment to innovation and sustainability in the semiconductor industry, providing high-performance components that support advanced technologies and applications.
Application
The STL23NM60ND is a N-channel MOSFET primarily used in power electronics applications such as switch-mode power supplies, motor control, and automotive systems. Its features support high-voltage switching, making it suitable for applications like inverters, lighting control, and industrial automation. Additionally, it can be utilized in energy management systems and renewable energy applications like solar inverters.
Equivalent
The STL23NM60ND is an N-channel MOSFET commonly used in power applications. Equivalent products include:
1. IRF620
2. FQP30N60
3. STP23NM60
4. MTP23N60
5. BTA23-600V
Always verify specifications such as voltage, current ratings, and RDS(on) before substitution.
1. IRF620
2. FQP30N60
3. STP23NM60
4. MTP23N60
5. BTA23-600V
Always verify specifications such as voltage, current ratings, and RDS(on) before substitution.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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