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STL135N8F7AG
MOSFET N-CH 80V 130A POWERFLAT
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- Mfr。パート #STL135N8F7AG
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- データシート STL135N8F7AG DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, STripFET™ F7 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.6mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 103 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6800 pF @ 40 V |
| PowerDissipation(Max) | 4.8W (Ta), 135W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount, Wettable Flank |
| SupplierDevicePackage | PowerFlat™ (5x6) |
概要
Description
STL135N8F7AG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is part of the STMicroelectronics' STP series, featuring low on-resistance and high current handling capabilities, making it suitable for power management in various electronic devices.
Key specifications include a maximum drain-source voltage (V_DS) of 135V, a continuous drain current (I_D) of 8A, and an on-resistance (R_DS(on)) typically around 0.12 Ohm when fully enhanced. The device features a low threshold voltage, allowing for efficient operation with lower gate drive requirements.
Applications for the STL135N8F7AG include power supplies, motor drives, and other high-efficiency switching circuits. Its robust design helps minimize switching losses, making it ideal for energy-sensitive applications. Overall, the STL135N8F7AG is a reliable choice for engineers seeking efficient and compact power solutions in their designs.
Key specifications include a maximum drain-source voltage (V_DS) of 135V, a continuous drain current (I_D) of 8A, and an on-resistance (R_DS(on)) typically around 0.12 Ohm when fully enhanced. The device features a low threshold voltage, allowing for efficient operation with lower gate drive requirements.
Applications for the STL135N8F7AG include power supplies, motor drives, and other high-efficiency switching circuits. Its robust design helps minimize switching losses, making it ideal for energy-sensitive applications. Overall, the STL135N8F7AG is a reliable choice for engineers seeking efficient and compact power solutions in their designs.
Features
The STL135N8F7AG is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 135A, suitable for high-power applications.
3. R_DS(on): It offers low on-resistance (R_DS(on)), typically around 7.5 mΩ, ensuring minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for efficient gate drive configurations.
5. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, making it suitable for high-frequency applications.
7. Thermal Performance: Designed for high thermal performance, it can operate efficiently in demanding environments.
These features make the STL135N8F7AG ideal for applications in power supplies, motor drives, and power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 135A, suitable for high-power applications.
3. R_DS(on): It offers low on-resistance (R_DS(on)), typically around 7.5 mΩ, ensuring minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for efficient gate drive configurations.
5. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, making it suitable for high-frequency applications.
7. Thermal Performance: Designed for high thermal performance, it can operate efficiently in demanding environments.
These features make the STL135N8F7AG ideal for applications in power supplies, motor drives, and power management systems.
Package
The STL135N8F7AG is packaged in a TO-220 form factor, which is a standard package used for power transistors. This package type provides good thermal performance and allows for easy mounting to heatsinks.
Pinout
The STL135N8F7AG is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. Current enters the MOSFET through this pin when it is turned on.
4. Body Diode (internal): While not a pin, it's worth noting that the STL135N8F7AG includes an intrinsic body diode that allows current to flow in the reverse direction when the MOSFET is off.
This device is typically used in power applications due to its high current handling capability and low on-resistance.
1. Gate (G): This pin is used to control the MOSFET operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. Current enters the MOSFET through this pin when it is turned on.
4. Body Diode (internal): While not a pin, it's worth noting that the STL135N8F7AG includes an intrinsic body diode that allows current to flow in the reverse direction when the MOSFET is off.
This device is typically used in power applications due to its high current handling capability and low on-resistance.
Manufacturer
The STL135N8F7AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and supplies a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various industries, such as automotive, industrial, personal electronics, and communication. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovative technologies and commitment to sustainability. The STL135N8F7AG itself is a N-channel MOSFET, commonly used in power management applications.
Application
The STL135N8F7AG is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and switch-mode power converters. It is suitable for automotive applications, LED drivers, and DC-DC converters due to its low on-resistance and high-speed switching capabilities. Additionally, it is utilized in industrial automation and renewable energy systems, such as solar inverters.
Equivalent
The STL135N8F7AG is an N-channel MOSFET. Equivalent products include:
1. IRF135
2. STP135N8F7
3. FQP135N8
4. BUK7Y135-100
Always verify specifications such as voltage, current, and package type before substitution.
1. IRF135
2. STP135N8F7
3. FQP135N8
4. BUK7Y135-100
Always verify specifications such as voltage, current, and package type before substitution.
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