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STH310N10F7-6
MOSFET N-CH 100V 180A H2PAK-6
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- Mfr。パート #STH310N10F7-6
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- データシート STH310N10F7-6 DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-6 |
概要
Description
The STH310N10F7-6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications in power electronics. It belongs to the STMicroelectronics family of devices and features a low on-resistance, high-speed switching capability, and a maximum drain-source voltage of 100V. This makes it suitable for use in power supply circuits, DC-DC converters, and motor control applications.
Key specifications include a maximum continuous drain current of 310A and a low gate threshold voltage, making it efficient for various applications. The device is housed in a TO-220 package, facilitating effective thermal management. Its robust design and reliability contribute to improved efficiency and performance in electronic systems.
Due to its characteristics, the STH310N10F7-6 is widely utilized in automotive, industrial, and consumer electronics, where effective power management is crucial.
Key specifications include a maximum continuous drain current of 310A and a low gate threshold voltage, making it efficient for various applications. The device is housed in a TO-220 package, facilitating effective thermal management. Its robust design and reliability contribute to improved efficiency and performance in electronic systems.
Due to its characteristics, the STH310N10F7-6 is widely utilized in automotive, industrial, and consumer electronics, where effective power management is crucial.
Features
The STH310N10F7-6 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power management applications.
2. Current Rating: With a continuous drain current (I_D) of up to 310A, it can handle significant power loads.
3. R_DS(on): The on-resistance is as low as 7.6 mΩ, which minimizes conduction losses and enhances efficiency.
4. Thermal Performance: It has a high junction-to-ambient thermal resistance, allowing for effective heat dissipation.
5. Gate Threshold Voltage: The gate-to-source threshold voltage is low, which allows for easy driving with logic-level signals.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat sinking.
7. Fast Switching: Designed for rapid switching applications, making it ideal for power supplies, motor drives, and converters.
These features make the STH310N10F7-6 a versatile choice for power electronic designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power management applications.
2. Current Rating: With a continuous drain current (I_D) of up to 310A, it can handle significant power loads.
3. R_DS(on): The on-resistance is as low as 7.6 mΩ, which minimizes conduction losses and enhances efficiency.
4. Thermal Performance: It has a high junction-to-ambient thermal resistance, allowing for effective heat dissipation.
5. Gate Threshold Voltage: The gate-to-source threshold voltage is low, which allows for easy driving with logic-level signals.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat sinking.
7. Fast Switching: Designed for rapid switching applications, making it ideal for power supplies, motor drives, and converters.
These features make the STH310N10F7-6 a versatile choice for power electronic designs.
Package
The STH310N10F7-6 is packaged in a TO-220 style. This package type features three pins and is commonly used for high-power applications due to its excellent thermal performance and ability to dissipate heat effectively.
Pinout
The STH310N10F7-6 is an N-channel MOSFET with a total of 3 pins. Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output terminal where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input terminal where the current enters the MOSFET when it is turned on.
The STH310N10F7-6 is designed for high-efficiency switching applications, with a maximum continuous drain current and low on-resistance, making it suitable for power management and conversion tasks in various electronic devices.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output terminal where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input terminal where the current enters the MOSFET when it is turned on.
The STH310N10F7-6 is designed for high-efficiency switching applications, with a maximum continuous drain current and low on-resistance, making it suitable for power management and conversion tasks in various electronic devices.
Manufacturer
The STH310N10F7-6 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal integrated circuits, as well as discrete devices. The company serves various markets, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in power management, microcontrollers, sensors, and other technologies, contributing to advancements in automation, connectivity, and energy efficiency across multiple applications.
Application
The STH310N10F7-6 is an N-channel MOSFET used in various applications such as power supply circuits, DC-DC converters, motor drives, and electric vehicles. Its high switching speed and low on-resistance make it ideal for efficient power management in industrial automation, renewable energy systems, and consumer electronics.
Equivalent
The STH310N10F7-6 is an N-channel MOSFET. Equivalent products include the IRF310, STP310N10F7, and the FQP310N10. Always verify specifications such as voltage, current ratings, and RDS(on) values before substitution to ensure compatibility in your application.
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