STGWA40H65DFB2

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STGWA40H65DFB2

TRENCH GATE FIELD-STOP 650 V 40

100% オリジナル &新しい

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仕様

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 72 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2V @ 15V, 40A
Power-Max 230 W
SwitchingEnergy 765µJ (on), 410µJ (off)
InputType Standard
GateCharge 153 nC
Td(on/off)@25°C 18ns/72ns
TestCondition 400V, 40A, 4.7Ohm, 15V
ReverseRecoveryTime(trr) 75 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概要

Description

The STGWA40H65DFB2 is a high-performance N-channel MOSFET designed for power applications. It features a voltage rating of 650V and a current rating of 40A, making it suitable for use in various high-voltage switching applications. This MOSFET is characterized by its low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation. It is particularly useful in power supply circuits, motor drives, and renewable energy systems.
The device is built using advanced technology to ensure fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles. Additionally, the STGWA40H65DFB2 is encapsulated in a TO-247 package, which facilitates effective heat dissipation, ensuring reliable performance under load. Its robust design is suitable for automotive and industrial environments, offering a balance of performance, efficiency, and thermal management. Overall, the STGWA40H65DFB2 is an excellent choice for designers seeking high-efficiency solutions in demanding power applications.

Features

The STGWA40H65DFB2 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 40A, allowing it to manage significant power loads.
3. Low On-Resistance: It offers a low R_DS(on) of approximately 0.55 ohms, which reduces power losses and enhances efficiency.
4. Fast Switching: The MOSFET is designed for rapid switching, enabling better performance in high-frequency applications.
5. Thermal Performance: It features a high junction temperature rating and good thermal dissipation characteristics.
6. TO-220 Package: The device is housed in a TO-220 package, which supports easy mounting and heatsinking.
These features make the STGWA40H65DFB2 suitable for use in various applications, including power supplies, motor drives, and energy conversion systems.

Package

The STGWA40H65DFB2 is typically packaged in a TO-247 form factor. This package type is designed for high-power applications, offering good thermal performance and ease of mounting on heat sinks.

Pinout

The STGWA40H65DFB2 is a power MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which the current enters the MOSFET.
Typically, in a standard package layout, the pins are arranged to facilitate easy connection in circuit designs. This device is designed for high-voltage applications and features low on-resistance, making it suitable for various switching and amplification applications in power management circuits.

Manufacturer

The manufacturer of the STGWA40H65DFB2 is STMicroelectronics. STMicroelectronics is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including microcontrollers, sensors, and power management devices. The company is known for its focus on innovation and sustainability, serving various industries such as automotive, industrial, consumer electronics, and communication. Established through the merger of SGS Microelettronica and Thomson Semiconducteurs, STMicroelectronics is headquartered in Geneva, Switzerland, and is recognized as one of the top semiconductor companies in the world.

Application

The STGWA40H65DFB2 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and industrial automation. Its features make it suitable for energy-efficient systems in renewable energy setups, electric vehicles, and DC-DC converters. Additionally, it is employed in switch-mode power supplies (SMPS) and other high-frequency applications for improved thermal performance and reliability.

Equivalent

The STGWA40H65DFB2 is a 650V, 40A IGBT with a soft recovery diode. Equivalent products include:
1. Infineon IGBT: IKW40N65H3
2. ON Semiconductor: MGD20N65D1
3. NXP (formerly Freescale): FGA40N65FDT
4. Fairchild: FGA40N65UFD
Always check datasheets for specific electrical characteristics to ensure compatibility.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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