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STGWA40H65DFB

Name: STGWA40H65DFB
Rating: 4.7 (12 reviews)

IGBT TRENCH 650V 80A TO247

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Mfr。パート #STGWA40H65DFB
パッケージ TO-247 long leads
データシート STGWA40H65DFB DataSheet
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仕様

Package	Tube
Series	HB
ProductStatus	Active
IGBTType	Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max)	650 V
Current-Collector(Ic)(Max)	80 A
Current-CollectorPulsed(Icm)	160 A
Vce(on)(Max)@VgeIc	2V @ 15V, 40A
Power-Max	283 W
SwitchingEnergy	498µJ (on), 363µJ (off)
InputType	Standard
GateCharge	210 nC
Td(on/off)@25°C	40ns/142ns
TestCondition	400V, 40A, 5Ohm, 15V
ReverseRecoveryTime(trr)	62 ns
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-247-3

概要

Description

The STGWA40H65DFB is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and DC-DC converters. With a voltage rating of 650V and a current rating of 40A, it is well-suited for high-voltage and high-efficiency applications.
This MOSFET features a low on-resistance (RDS(on)), which reduces power losses and enhances thermal performance, making it ideal for energy-efficient designs. It also has a fast switching speed, enabling rapid response in switching applications.
The STGWA40H65DFB is packaged in a TO-247 format, providing robust thermal performance and ease of integration into various designs. Its characteristics make it a popular choice in renewable energy systems, industrial power supplies, and automotive applications.
Overall, the STGWA40H65DFB is a versatile component that combines high voltage handling with efficient operation, making it a valuable addition to modern electronic systems.

Features

The STGWA40H65DFB is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 40A, ideal for power management tasks.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of around 0.15 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V and 4V, allowing for easier switching control.
5. Switching Speed: Fast switching capabilities make it suitable for applications in DC-DC converters, inverters, and other power electronics.
6. Package Type: Typically available in TO-247 or similar packages, facilitating heat dissipation and integration into circuit designs.
Overall, the STGWA40H65DFB is optimized for high efficiency and reliability in demanding electronic applications.

Package

The STGWA40H65DFB is packaged in a TO-247 format, which is a type of insulated package used for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The STGWA40H65DFB is a power MOSFET with a pin count of 5. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows the device to turn on (conduct), and removing the voltage turns it off (non-conducting).

2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is typically connected to ground or the negative side of the power supply. It completes the circuit by allowing current to flow out.
4. Gate (G): The second gate pin may be used for enhanced control or specific circuit configurations.
5. N/C (Not Connected): This pin is not internally connected and should be left unconnected in the application.
The STGWA40H65DFB is designed for high-efficiency switching applications, making it suitable for power converters and inverters.

Manufacturer

The STGWA40H65DFB is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including power management devices, microcontrollers, and MEMS sensors. The company serves various markets, including automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovation in energy-efficient solutions and is headquartered in Geneva, Switzerland.

Application

The STGWA40H65DFB is a high-voltage N-channel MOSFET primarily used in power electronics applications, including power supplies, motor drives, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for efficient power management in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be utilized in inverter circuits and other high-frequency applications.

Equivalent

The STGWA40H65DFB is a 650V, 40A N-channel MOSFET. Equivalent products include the Infineon IPW40R065CFD, ON Semiconductor NTMFS5C404N, and Vishay SIHP40N65E. Always verify specifications such as Rds(on), threshold voltage, and package type before substitution.