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STGW20NC60VD
IGBT 600V 60A 200W TO247
- メーカー
- Mfr。パート #STGW20NC60VD
- パッケージ TO-247-3
- データシート STGW20NC60VD DataSheet
- 在庫中3477
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仕様
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 60 A |
| Current-CollectorPulsed(Icm) | 150 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 20A |
| Power-Max | 200 W |
| SwitchingEnergy | 220µJ (on), 330µJ (off) |
| InputType | Standard |
| GateCharge | 100 nC |
| Td(on/off)@25°C | 31ns/100ns |
| TestCondition | 390V, 20A, 3.3Ohm, 15V |
| ReverseRecoveryTime(trr) | 44 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概要
Description
The STGW20NC60VD is a high-voltage, N-channel MOSFET designed for use in power applications, particularly in switch-mode power supplies, motor drives, and industrial equipment. It features a voltage rating of 600V and a current rating of 20A, making it suitable for high-power circuits. The device is built on a trench technology that minimizes on-resistance, enhancing efficiency and thermal performance.
Key specifications include a low RDS(on) value, which reduces conduction losses, and a fast switching speed that improves overall performance in high-frequency applications. It also boasts a high gate threshold voltage, ensuring reliable operation in varying conditions.
The STGW20NC60VD is available in a TO-247 package, providing good thermal dissipation characteristics, crucial for maintaining performance under load. Its robust construction and versatility make it a popular choice for engineers designing reliable power systems. Overall, this MOSFET combines high performance with efficiency, making it a valuable component in modern electronic applications.
Key specifications include a low RDS(on) value, which reduces conduction losses, and a fast switching speed that improves overall performance in high-frequency applications. It also boasts a high gate threshold voltage, ensuring reliable operation in varying conditions.
The STGW20NC60VD is available in a TO-247 package, providing good thermal dissipation characteristics, crucial for maintaining performance under load. Its robust construction and versatility make it a popular choice for engineers designing reliable power systems. Overall, this MOSFET combines high performance with efficiency, making it a valuable component in modern electronic applications.
Features
The STGW20NC60VD is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain current (Id) of up to 20A, which allows for significant power handling.
3. RDS(on): Low on-state resistance (Rds(on)), typically around 0.55 ohms, leading to reduced conduction losses.
4. Gate Threshold Voltage (Vgs(th)): It has a threshold voltage range of 2 to 4V, ensuring efficient switching control.
5. Fast Switching Speed: Suitable for high-frequency applications, contributing to improved efficiency in switching converters.
6. Package: Available in a TO-247 package, facilitating effective heat dissipation.
7. Robustness: Designed to withstand harsh conditions with a maximum operating temperature of 150°C.
These features make the STGW20NC60VD ideal for use in applications such as power supplies, motor drives, and inverters.
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain current (Id) of up to 20A, which allows for significant power handling.
3. RDS(on): Low on-state resistance (Rds(on)), typically around 0.55 ohms, leading to reduced conduction losses.
4. Gate Threshold Voltage (Vgs(th)): It has a threshold voltage range of 2 to 4V, ensuring efficient switching control.
5. Fast Switching Speed: Suitable for high-frequency applications, contributing to improved efficiency in switching converters.
6. Package: Available in a TO-247 package, facilitating effective heat dissipation.
7. Robustness: Designed to withstand harsh conditions with a maximum operating temperature of 150°C.
These features make the STGW20NC60VD ideal for use in applications such as power supplies, motor drives, and inverters.
Package
The STGW20NC60VD is packaged in a TO-247 format. This package type is designed for high power applications, providing efficient thermal management and robust performance in power electronics systems.
Pinout
The STGW20NC60VD is a N-channel power MOSFET with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply; it completes the circuit when the MOSFET is conducting.
The device is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 20A, making it suitable for high-voltage applications.
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply; it completes the circuit when the MOSFET is conducting.
The device is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 20A, making it suitable for high-voltage applications.
Manufacturer
The STGW20NC60VD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including microcontrollers, analog devices, and power management solutions. The company serves various industries, such as automotive, industrial, consumer electronics, and communications. STMicroelectronics focuses on innovation and sustainability, developing technologies that enhance performance and energy efficiency. With a strong presence in Europe, Asia, and the Americas, it is recognized as a leader in the semiconductor market.
Application
The STGW20NC60VD is a high-voltage N-channel IGBT primarily used in applications such as industrial motor drives, induction heating, and power supply circuits. It is suitable for switching and controlling large amounts of power in sectors like renewable energy systems (e.g., solar inverters), HVAC equipment, and electric vehicles. Its ability to handle high voltages and currents makes it ideal for applications requiring efficient power conversion and management.
Equivalent
The STGW20NC60VD is a 600V, 20A IGBT. Equivalent products include the Infineon IGBT series, such as the FGH60N60SFD or the FGH20N60SFD, and the Mitsubishi MG20J6ES or MG20J60E. Ensure to check specifications for current ratings, voltage, switching speeds, and thermal characteristics to confirm compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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