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STGW20H60DF
IGBT TRENCH FS 600V 40A TO-247
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- Mfr。パート #STGW20H60DF
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- データシート STGW20H60DF DataSheet
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仕様
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Power - Max | 167 W |
| Switching Energy | 209µJ (on), 261µJ (off) |
| Input Type | Standard |
| Gate Charge | 115 nC |
| Td (on/off) @ 25°C | 42.5ns/177ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 90 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Base Product Number | STGW20 |
概要
Description
The STGW20H60DF is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) designed for various power applications, such as motor drives, switch-mode power supplies, and renewable energy systems. It features a voltage rating of 600V and a maximum continuous collector current of 20A, making it suitable for applications requiring high efficiency and robust performance.
This IGBT combines the advantages of MOSFETs and bipolar transistors, offering low conduction losses and fast switching capabilities. It typically comes in a TO-220 package, facilitating easy thermal management and PCB integration. The STGW20H60DF is known for its reliability and thermal stability, making it ideal for demanding environments.
Key characteristics include low gate threshold voltage, high input impedance, and a wide operating temperature range. Additionally, it is often used in conjunction with diodes for enhanced performance in converter circuits and applications that require fast switching. Overall, the STGW20H60DF is a versatile component that supports efficient power conversion in industrial and commercial settings.
This IGBT combines the advantages of MOSFETs and bipolar transistors, offering low conduction losses and fast switching capabilities. It typically comes in a TO-220 package, facilitating easy thermal management and PCB integration. The STGW20H60DF is known for its reliability and thermal stability, making it ideal for demanding environments.
Key characteristics include low gate threshold voltage, high input impedance, and a wide operating temperature range. Additionally, it is often used in conjunction with diodes for enhanced performance in converter circuits and applications that require fast switching. Overall, the STGW20H60DF is a versatile component that supports efficient power conversion in industrial and commercial settings.
Features
The STGW20H60DF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for use in power applications. Key features include:
1. Voltage Rating: Supports a maximum collector-emitter voltage (Vce) of 600V.
2. Current Rating: Handles continuous collector current (Ic) of 20A, suitable for medium power applications.
3. Low Saturation Voltage: Offers a low Vce(sat) for improved efficiency during operation.
4. Fast Switching: Designed for fast switching times, enhancing performance in inverter and converter applications.
5. Thermal Resistance: Features low thermal resistance, facilitating efficient heat dissipation.
6. Robustness: Built with high reliability and ruggedness, ideal for industrial applications.
7. Package Type: Typically available in a TO-220 package, allowing for easy heat sinking and mounting.
These characteristics make the STGW20H60DF suitable for applications in motor drives, power supplies, and renewable energy systems.
1. Voltage Rating: Supports a maximum collector-emitter voltage (Vce) of 600V.
2. Current Rating: Handles continuous collector current (Ic) of 20A, suitable for medium power applications.
3. Low Saturation Voltage: Offers a low Vce(sat) for improved efficiency during operation.
4. Fast Switching: Designed for fast switching times, enhancing performance in inverter and converter applications.
5. Thermal Resistance: Features low thermal resistance, facilitating efficient heat dissipation.
6. Robustness: Built with high reliability and ruggedness, ideal for industrial applications.
7. Package Type: Typically available in a TO-220 package, allowing for easy heat sinking and mounting.
These characteristics make the STGW20H60DF suitable for applications in motor drives, power supplies, and renewable energy systems.
Package
The STGW20H60DF is packaged in a TO-220 type package, which is a metal-cased, insulated package commonly used for high-power semiconductor devices. This package provides good thermal performance and is suitable for demanding applications.
Pinout
The STGW20H60DF is a high-voltage, high-speed power MOSFET designed for use in various applications, including switch mode power supplies and motor control. It features a total of 5 pins.
The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET by applying a voltage to turn it on or off.
2. Drain (D) - This pin is connected to the load; it allows current to flow from the drain to the source when the device is on.
3. Source (S) - This pin is connected to ground or the negative side of the circuit, completing the current path.
4. N/C (Not Connected) - These are unused pins that should not be connected.
5. N/C (Not Connected) - Another unused pin.
The STGW20H60DF is rated for a voltage of 600V and a continuous current capability of 20A, making it suitable for high-voltage applications.
The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET by applying a voltage to turn it on or off.
2. Drain (D) - This pin is connected to the load; it allows current to flow from the drain to the source when the device is on.
3. Source (S) - This pin is connected to ground or the negative side of the circuit, completing the current path.
4. N/C (Not Connected) - These are unused pins that should not be connected.
5. N/C (Not Connected) - Another unused pin.
The STGW20H60DF is rated for a voltage of 600V and a continuous current capability of 20A, making it suitable for high-voltage applications.
Manufacturer
The STGW20H60DF is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, power management devices, and sensors. The company serves various sectors, such as automotive, industrial, consumer electronics, and telecommunications. With a focus on innovation and sustainability, STMicroelectronics plays a significant role in advancing technologies like IoT, automotive electronics, and energy efficiency.
Application
The STGW20H60DF is a high-voltage, N-channel IGBT primarily used in applications such as industrial motor drives, induction heating, welding equipment, and power supplies. Its high switching speed and efficiency make it suitable for converters and inverters in renewable energy systems, like solar and wind power. Additionally, it is utilized in UPS systems and other power management solutions requiring robust performance at elevated temperatures.
Equivalent
The STGW20H60DF is a 600V, 20A IGBT. Equivalent products include the Infineon IGBT series (e.g., BSM20GD60DN2), the ON Semiconductor MBR20H60 and Mitsubishi's CM20DY-24NF. Ensure to check specifications like voltage, current ratings, and switching characteristics for compatibility.
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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