STGP19NC60KD

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STGP19NC60KD

IGBT 600V 35A TO-220

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仕様

Series PowerMESH™
Part Status Active
Base Product Number STGP19
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 75 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Power - Max 125 W
Switching Energy 165µJ (on), 255µJ (off)
Input Type Standard
Gate Charge 55 nC
Td (on/off) @ 25°C 30ns/105ns
Test Condition 480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 31 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-220-3
Supplier Device Package TO-220
Packaging Tube

概要

Description

The STGP19NC60KD is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It is part of STMicroelectronics' product line, featuring a voltage rating of 600V and a continuous current rating of 19A. This device is optimized for switching applications, making it suitable for use in power converters, inverters, and motor control.
Key specifications include a low on-resistance, which enhances efficiency by minimizing power losses during operation. The STGP19NC60KD also supports high-speed switching, contributing to improved performance in various applications. Its rugged design includes features to handle high-temperature environments, ensuring reliable operation under strenuous conditions.
The MOSFET comes in a TO-220 package, facilitating easy mounting and heat dissipation. Its characteristics make it a popular choice for engineers looking to design efficient and reliable power electronics systems. Overall, the STGP19NC60KD is a versatile component well-suited for a variety of industrial and consumer applications.

Features

The STGP19NC60KD is a silicon N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 600V, making it suitable for various high-voltage applications.
2. Current Rating: It has a continuous drain current (Id) rating of 19A, allowing it to handle substantial loads.
3. RDS(on): The on-resistance is typically low (around 0.9 ohms), which contributes to reduced power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, facilitating easy drive requirements.
5. Fast Switching: It offers fast switching capabilities, making it ideal for applications like power supplies and converters.
6. Package: Available in an ISOPLUS package, which enhances thermal performance.
7. Applications: Commonly used in industrial equipment, power management systems, and automotive applications.
These features make the STGP19NC60KD a versatile choice for power electronics designs.

Package

The STGP19NC60KD is typically packaged in a TO-220 case. This packaging provides good thermal performance and allows for easy mounting on heat sinks, making it suitable for power applications.

Pinout

The STGP19NC60KD is a 600V N-channel power MOSFET from STMicroelectronics. It features a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is turned on.
3. Source (S) - The terminal that connects to the ground or negative side of the circuit.
The remaining pins are typically used for thermal and mechanical support or may be connected to the same electrical potential as one of the main terminals. This device is designed for high-efficiency switching applications, making it suitable for power supplies, inverters, and motor drives. Its key features include low on-resistance and high-speed switching capabilities.

Manufacturer

The STGP19NC60KD is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs and manufactures a wide range of semiconductor solutions, including power management devices, analog ICs, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, personal electronics, and telecommunications. STMicroelectronics is known for its innovation and commitment to sustainability, focusing on energy-efficient technologies and solutions.

Application

The STGP19NC60KD is a N-channel MOSFET primarily used in applications such as power supplies, motor drivers, and switching regulators. Its high voltage rating and low on-resistance make it suitable for industrial and automotive applications, including DC-DC converters and inverters. Additionally, it can be utilized in high-frequency applications and for controlling loads in various electronic circuits.

Equivalent

The STGP19NC60KD is an N-channel MOSFET with a 600V rating and 19A continuous current. Equivalent products include:
1. IRF240 - 150V, higher power rating.
2. IRF320 - 55V, higher current capacity.
3. FQD20N60 - 600V, 20A.
4. MTP20N60E - 600V, 20A.
5. AOD20N60 - 600V, 20A.
Always check specific parameters like RDS(on), gate threshold voltage, and package type for compatibility.

出荷

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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