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STGF3NC120HD
IGBT 1200V 6A 25W TO220FP
- メーカー
- Mfr。パート #STGF3NC120HD
- パッケージ TO-220-3 Full Pack
- データシート STGF3NC120HD DataSheet
- 在庫中6616
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 6 A |
| Current-CollectorPulsed(Icm) | 20 A |
| Vce(on)(Max)@VgeIc | 2.8V @ 15V, 3A |
| Power-Max | 25 W |
| SwitchingEnergy | 236µJ (on), 290µJ (off) |
| InputType | Standard |
| GateCharge | 24 nC |
| Td(on/off)@25°C | 15ns/118ns |
| TestCondition | 800V, 3A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 51 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-220-3 Full Pack |
概要
Description
The STGF3NC120HD is a high-performance, N-channel MOSFET manufactured by STMicroelectronics, part of their EcoSPARK series. This device is designed for applications requiring high efficiency and reliability, such as in power conversion systems, industrial automation, and renewable energy systems.
Key features include a maximum drain-source voltage (V_DS) of 120V, a continuous drain current (I_D) of 55A, and a low on-resistance (R_DS(on)), which enhances thermal performance and minimizes power loss. The STGF3NC120HD is packaged in a TO-220 format, allowing for easy heat dissipation in demanding environments.
Additionally, this MOSFET offers a fast switching capability, making it suitable for applications in switching power supplies and motor drives. With built-in protection features such as avalanche rating, it ensures robustness during operation. Overall, the STGF3NC120HD is an effective solution for engineers looking for high-efficiency power management components.
Key features include a maximum drain-source voltage (V_DS) of 120V, a continuous drain current (I_D) of 55A, and a low on-resistance (R_DS(on)), which enhances thermal performance and minimizes power loss. The STGF3NC120HD is packaged in a TO-220 format, allowing for easy heat dissipation in demanding environments.
Additionally, this MOSFET offers a fast switching capability, making it suitable for applications in switching power supplies and motor drives. With built-in protection features such as avalanche rating, it ensures robustness during operation. Overall, the STGF3NC120HD is an effective solution for engineers looking for high-efficiency power management components.
Features
The STGF3NC120HD is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 120V, making it suitable for medium to high-voltage applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 50A, allowing it to handle significant power loads.
3. Low R_DS(on): Exhibits a low on-resistance (R_DS(on)) value, typically around 0.18Ω, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing it to be driven by low-voltage control signals.
5. Fast Switching Speed: Designed for fast switching applications, minimizing transition losses in circuits.
6. Thermal Performance: Comes with a TO-220 package, providing good thermal dissipation capabilities for reliable operation.
7. Applications: Ideal for use in power supplies, motor drives, and other switching applications.
Overall, the STGF3NC120HD combines high voltage and current ratings with efficient performance characteristics.
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 120V, making it suitable for medium to high-voltage applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 50A, allowing it to handle significant power loads.
3. Low R_DS(on): Exhibits a low on-resistance (R_DS(on)) value, typically around 0.18Ω, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing it to be driven by low-voltage control signals.
5. Fast Switching Speed: Designed for fast switching applications, minimizing transition losses in circuits.
6. Thermal Performance: Comes with a TO-220 package, providing good thermal dissipation capabilities for reliable operation.
7. Applications: Ideal for use in power supplies, motor drives, and other switching applications.
Overall, the STGF3NC120HD combines high voltage and current ratings with efficient performance characteristics.
Package
The STGF3NC120HD is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust electrical performance.
Pinout
The STGF3NC120HD is a 1200V N-channel power MOSFET designed for high-efficiency applications. It features a TO-247 package, which has a pin count of 3. The pins are designated as follows:
1. Gate (G) - This pin controls the MOSFET's switching; applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load; it is where the current flows out of the MOSFET.
3. Source (S) - This pin is connected to the ground or negative side of the power supply; it completes the circuit for current flow.
The STGF3NC120HD is suitable for applications like power supplies, motor drives, and other high-voltage switching applications due to its low on-resistance and high-speed switching capabilities.
1. Gate (G) - This pin controls the MOSFET's switching; applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load; it is where the current flows out of the MOSFET.
3. Source (S) - This pin is connected to the ground or negative side of the power supply; it completes the circuit for current flow.
The STGF3NC120HD is suitable for applications like power supplies, motor drives, and other high-voltage switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The STGF3NC120HD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, and manufacture of a wide range of semiconductor products, including microcontrollers, sensors, power management devices, and analog ICs. Established in 1987, the company is known for its innovation and focus on enabling sustainable solutions across various sectors, including automotive, industrial, and consumer electronics. STMicroelectronics operates worldwide, serving a diverse customer base and contributing to advancements in technology through its extensive portfolio of products and solutions.
Application
The STGF3NC120HD is a power MOSFET primarily used in applications such as power supplies, motor control, and industrial automation. It is suitable for high-efficiency switch-mode power supplies (SMPS), inverters, and converters. Its features make it ideal for renewable energy systems, electric vehicles, and heating systems, where high voltage and current handling are required.
Equivalent
The STGF3NC120HD is a 1200V, 30A IGBT module. Equivalent products include the Infineon FZ1200R12KF4, Mitsubishi CM1200DU-24F, and the ON Semiconductor MBR1200. Always verify parameters like voltage, current ratings, and package types for compatibility in your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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