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STGD25N40LZAG
POWER TRANSISTORS
- メーカー
- Mfr。パート #STGD25N40LZAG
- パッケージ TO-252-3
- データシート STGD25N40LZAG DataSheet
- 在庫中7674
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 435 V |
| Current-Collector(Ic)(Max) | 25 A |
| Current-CollectorPulsed(Icm) | 50 A |
| Vce(on)(Max)@VgeIc | 1.25V @ 4V, 6A |
| Power-Max | 125 W |
| InputType | Logic |
| GateCharge | 26 nC |
| Td(on/off)@25°C | 1.1µs/4.6µs |
| TestCondition | 300V, 10A, 1kOhm, 5V |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概要
Description
The STGD25N40LZAG is a powerful N-channel MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 400V and a continuous drain current (I_D) of 25A, making it suitable for various switching applications, including power supplies, motor drivers, and industrial equipment.
Key specifications include a low on-resistance (R_DS(on)) that enhances its performance by reducing power loss during operation. The device is housed in a TO-220 package, which facilitates effective heat dissipation, crucial for maintaining reliability under high thermal conditions.
The STGD25N40LZAG is optimized for fast switching speeds, allowing for efficient operation in pulse-width modulation (PWM) applications. Its high breakdown voltage and robust construction make it ideal for demanding environments.
Overall, this MOSFET is widely used in energy-efficient designs due to its performance characteristics and reliability, making it a favorable choice for engineers and designers in the electronics industry.
Key specifications include a low on-resistance (R_DS(on)) that enhances its performance by reducing power loss during operation. The device is housed in a TO-220 package, which facilitates effective heat dissipation, crucial for maintaining reliability under high thermal conditions.
The STGD25N40LZAG is optimized for fast switching speeds, allowing for efficient operation in pulse-width modulation (PWM) applications. Its high breakdown voltage and robust construction make it ideal for demanding environments.
Overall, this MOSFET is widely used in energy-efficient designs due to its performance characteristics and reliability, making it a favorable choice for engineers and designers in the electronics industry.
Features
The STGD25N40LZAG is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
- Voltage Rating: 400V, suitable for high-voltage applications.
- Continuous Drain Current: 25A, allowing substantial power handling.
- RDS(on): Low on-resistance, typically 0.25Ω, enhancing efficiency and reducing heat generation.
- Gate Threshold Voltage: 2-4V, ensuring compatibility with low-voltage driving circuits.
- Package: Available in a TO-220 package, facilitating effective heat dissipation.
- Fast Switching Speed: Designed for high-frequency applications, improving performance in switching power supplies and converters.
- Robustness: Features a rugged design for reliability in various conditions.
These characteristics make the STGD25N40LZAG suitable for applications such as power supplies, motor drives, and inverters, where efficiency and reliability are crucial.
- Voltage Rating: 400V, suitable for high-voltage applications.
- Continuous Drain Current: 25A, allowing substantial power handling.
- RDS(on): Low on-resistance, typically 0.25Ω, enhancing efficiency and reducing heat generation.
- Gate Threshold Voltage: 2-4V, ensuring compatibility with low-voltage driving circuits.
- Package: Available in a TO-220 package, facilitating effective heat dissipation.
- Fast Switching Speed: Designed for high-frequency applications, improving performance in switching power supplies and converters.
- Robustness: Features a rugged design for reliability in various conditions.
These characteristics make the STGD25N40LZAG suitable for applications such as power supplies, motor drives, and inverters, where efficiency and reliability are crucial.
Package
The STGD25N40LZAG is packaged in a TO-220 format. This type of package is designed for power devices, providing good thermal performance and allowing for easy mounting on heatsinks for efficient heat dissipation.
Pinout
The STGD25N40LZAG is a N-channel MOSFET from STMicroelectronics, designed for high-voltage applications. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's operation; applying a voltage here turns the device on or off.
2. Drain (D): The output terminal where the current flows out of the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode: Internal to the MOSFET, allows current to flow in the reverse direction when the MOSFET is off.
5. Thermal Pad: Not a pin but a physical pad on the package that helps dissipate heat.
This device is designed for applications such as power management, motor control, and switching applications, with a maximum voltage rating of 40V and a current rating of up to 25A.
1. Gate (G): Controls the MOSFET's operation; applying a voltage here turns the device on or off.
2. Drain (D): The output terminal where the current flows out of the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode: Internal to the MOSFET, allows current to flow in the reverse direction when the MOSFET is off.
5. Thermal Pad: Not a pin but a physical pad on the package that helps dissipate heat.
This device is designed for applications such as power management, motor control, and switching applications, with a maximum voltage rating of 40V and a current rating of up to 25A.
Manufacturer
The STGD25N40LZAG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is one of the world's largest manufacturers of semiconductor devices, specializing in a wide range of applications, including automotive, industrial, personal electronics, and communication. The company is known for its innovative technologies and integrated solutions that cater to various sectors, contributing to advancements in energy efficiency, connectivity, and smart technology. Headquartered in Geneva, Switzerland, STMicroelectronics operates in more than 30 countries and serves customers worldwide with a commitment to sustainability and technological excellence.
Application
The STGD25N40LZAG is a high-voltage N-channel MOSFET primarily used in power management applications. Its key areas include industrial automation, motor control, power supplies, and DC-DC converters. It is also suitable for applications in renewable energy systems, such as solar inverters, and in automotive electronics for electric vehicles. Its fast switching capabilities make it ideal for efficient power conversion and low-loss applications.
Equivalent
The STGD25N40LZAG is a N-channel MOSFET with a 400V rating and 25A current capacity. Equivalent products include:
1. IRF840
2. MTP40N40
3. STP40NF40
4. FQA40N40
5. BTA40-200V
Ensure to check the specific characteristics such as RDS(on), gate threshold voltage, and package type for compatibility.
1. IRF840
2. MTP40N40
3. STP40NF40
4. FQA40N40
5. BTA40-200V
Ensure to check the specific characteristics such as RDS(on), gate threshold voltage, and package type for compatibility.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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