STGB30M65DF2

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STGB30M65DF2

IGBT TRENCH FS 650V 60A TO-263

100% オリジナル &新しい

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仕様

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 258 W
Switching Energy 300µJ (on), 960µJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C 31.6ns/115ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2PAK)
Base Product Number STGB30

概要

Description

The STGB30M65DF2 is a high-voltage, N-channel MOSFET from STMicroelectronics, designed for a variety of applications, including power management and industrial systems. It features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 30A, making it suitable for high-efficiency switching applications. The device utilizes advanced technologies to provide low on-resistance (RDS(on)), which minimizes power losses during operation.
The STGB30M65DF2 is housed in a TO-220 package, facilitating easy heat dissipation and integration into different circuit designs. Its fast switching capabilities make it ideal for use in switch-mode power supplies (SMPS), inverters, and motor control circuits. Additionally, it offers robust thermal performance and reliability, crucial for demanding environments.
Overall, this MOSFET is a reliable choice for engineers seeking efficient, high-voltage solutions in their designs. For specific characteristics, including gate threshold voltage and thermal resistance, it is recommended to refer to the datasheet provided by STMicroelectronics.

Features

The STGB30M65DF2 is a high-voltage N-channel MOSFET designed for power applications, featuring a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 30A. Its low on-state resistance (RDS(on)) ensures efficient operation, minimizing power losses during conduction, with a typical value around 0.14 ohms at a gate voltage of 10V. The device is optimized for high-frequency switching, making it suitable for applications such as power supplies, DC-DC converters, and motor control.
Additional features include a fast switching speed, high thermal stability, and a robust package design (TO-220) that aids in effective heat dissipation. The STGB30M65DF2 is also characterized by a high gate threshold voltage (VGS(th)), which provides better control in various circuit configurations. Overall, this MOSFET combines efficiency, reliability, and performance, making it a popular choice among engineers for advanced power management solutions.

Package

The STGB30M65DF2 is packaged in a TO-247 format. This package type provides good thermal performance and is suitable for high-power applications, allowing for efficient heat dissipation.

Pinout

The STGB30M65DF2 is a 650V, N-channel MOSFET from STMicroelectronics designed for high-efficiency applications. It features a TO-220 package and has a pin count of three.
The pin configuration is as follows:
1. Gate (G) - This pin controls the operation of the MOSFET, allowing it to switch on or off based on the voltage applied.
2. Drain (D) - This pin is where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - This pin is the reference point for the gate voltage and provides the path for the current to enter the MOSFET.
The device is optimized for use in power supplies, motor drives, and other applications requiring efficient switching performance.

Manufacturer

The STGB30M65DF2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs, develops, and provides a wide range of semiconductor solutions, including power management, analog, and microcontroller products. The company serves various industries such as automotive, industrial, personal electronics, and communication equipment, focusing on innovation and sustainability in its products. STMicroelectronics is known for its commitment to research and development, aiming to deliver high-performance and energy-efficient solutions to meet the evolving needs of technology and consumers.

Application

The STGB30M65DF2 is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) designed for applications in power electronics. Key application areas include industrial motor drives, renewable energy systems (like solar inverters), welding equipment, and power supplies. It is particularly suitable for energy-efficient switching and control in high-frequency and high-temperature environments.

Equivalent

The STGB30M65DF2 is a 650V, 30A N-channel IGBT. Equivalent products include:
1. Infineon IGBT - IGBT30N65T
2. ON Semiconductor - FGA30N65SMD
3. Mitsubishi - CM30DY-24H
Always verify specifications and characteristics for compatibility in your application.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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