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STGB10NB37LZ
IGBT 440V 20A 125W D2PAK
- メーカー
- Mfr。パート #STGB10NB37LZ
- パッケージ TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- データシート STGB10NB37LZ DataSheet
- 在庫中15193
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 440 V |
| Current-Collector(Ic)(Max) | 20 A |
| Current-CollectorPulsed(Icm) | 40 A |
| Vce(on)(Max)@VgeIc | 1.8V @ 4.5V, 10A |
| Power-Max | 125 W |
| SwitchingEnergy | 2.4mJ (on), 5mJ (off) |
| InputType | Standard |
| GateCharge | 28 nC |
| Td(on/off)@25°C | 1.3µs/8µs |
| TestCondition | 328V, 10A, 1kOhm, 5V |
| OperatingTemperature | -65°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
概要
Description
The STGB10NB37LZ is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a voltage rating of 100V, a continuous drain current of 10A, and a low on-resistance, making it suitable for power management in various electronic devices. With its fast switching capabilities, it is commonly used in applications such as power supplies, motor drivers, and electronic lighting.
The device is encapsulated in a compact package, which enhances thermal performance and ease of integration into circuits. Key specifications typically include parameters like gate threshold voltage, maximum power dissipation, and thermal resistance. Its design minimizes energy loss during operation, contributing to improved efficiency in power applications.
Engineers often select the STGB10NB37LZ for its reliability and performance in demanding environments, making it a popular choice in both consumer electronics and industrial applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
The device is encapsulated in a compact package, which enhances thermal performance and ease of integration into circuits. Key specifications typically include parameters like gate threshold voltage, maximum power dissipation, and thermal resistance. Its design minimizes energy loss during operation, contributing to improved efficiency in power applications.
Engineers often select the STGB10NB37LZ for its reliability and performance in demanding environments, making it a popular choice in both consumer electronics and industrial applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Features
The STGB10NB37LZ is a high-performance N-channel power MOSFET designed for various applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 370V, making it suitable for high-voltage applications.
2. Current Rating: The device can carry a continuous current of up to 10A, allowing it to manage substantial loads.
3. Low R_DS(on): It has a low on-resistance (R_DS(on)) rating, which minimizes power loss and improves efficiency during operation.
4. Fast Switching: The MOSFET offers rapid switching capabilities, beneficial for applications like switching power supplies and motor drives.
5. Thermal Performance: It comes in a TO-220 package, ensuring effective heat dissipation and facilitating mounting on heat sinks.
6. Applications: Commonly used in power converters, inverters, and other high-frequency applications.
These characteristics make the STGB10NB37LZ a reliable choice for automotive, industrial, and consumer electronic applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 370V, making it suitable for high-voltage applications.
2. Current Rating: The device can carry a continuous current of up to 10A, allowing it to manage substantial loads.
3. Low R_DS(on): It has a low on-resistance (R_DS(on)) rating, which minimizes power loss and improves efficiency during operation.
4. Fast Switching: The MOSFET offers rapid switching capabilities, beneficial for applications like switching power supplies and motor drives.
5. Thermal Performance: It comes in a TO-220 package, ensuring effective heat dissipation and facilitating mounting on heat sinks.
6. Applications: Commonly used in power converters, inverters, and other high-frequency applications.
These characteristics make the STGB10NB37LZ a reliable choice for automotive, industrial, and consumer electronic applications.
Package
The STGB10NB37LZ is a power MOSFET packaged in a TO-220 format. This package type is designed for efficient heat dissipation and ease of mounting, making it suitable for high-power applications.
Pinout
The STGB10NB37LZ is a N-channel MOSFET designed for high-efficiency power applications. It features a total of 6 pins in a TO-220 package. The pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current flows to the load.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The specific pinout is:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Pin 4: Drain (D) (internally connected)
- Pin 5: Source (S) (internally connected)
- Pin 6: Source (S)
The STGB10NB37LZ is characterized by its low on-resistance, high-speed switching capability, and is suitable for applications like motor drivers, power supplies, and converters.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current flows to the load.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The specific pinout is:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Pin 4: Drain (D) (internally connected)
- Pin 5: Source (S) (internally connected)
- Pin 6: Source (S)
The STGB10NB37LZ is characterized by its low on-resistance, high-speed switching capability, and is suitable for applications like motor drivers, power supplies, and converters.
Manufacturer
The STGB10NB37LZ is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, manufacture, and marketing of a wide range of semiconductor products. Their offerings include microcontrollers, sensors, power management devices, and various integrated circuits used in automotive, industrial, consumer, and communication applications. The company is known for its innovation in technology and commitment to sustainability. Its headquarters are located in Geneva, Switzerland, and it operates globally with a focus on providing solutions that drive efficiency and performance in electronic devices.
Application
The STGB10NB37LZ is a high-performance N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and switch-mode power supplies. Its features make it suitable for automotive applications, renewable energy systems, and various industrial automation processes where efficient switching and thermal performance are critical.
Equivalent
The STGB10NB37LZ is an N-channel MOSFET. Equivalent products include the IRF3205, FQP50N06L, and BUK956-50A. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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