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STF28N60M2
MOSFET N-CH 600V 24A TO220FP
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- Mfr。パート #STF28N60M2
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仕様
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Base Product Number | STF28 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 100 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
概要
Description
The STF28N60M2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It belongs to STMicroelectronics' MDmesh™ M2 series, which is known for its advanced technology that offers low on-resistance and optimized gate charge. This specific model, STF28N60M2, can handle a maximum drain-source voltage (V_ds) of 600 volts and a continuous drain current (I_d) of up to 22 amps, making it suitable for medium to high-power applications.
The device is characterized by its fast switching speed and low power losses, which enhances efficiency in power conversion systems. It is commonly used in applications such as power supplies, motor drives, and lighting systems. The MOSFET is housed in a TO-220FP package, which offers good thermal performance and electrical isolation.
Overall, the STF28N60M2 is valued for its robustness, reliability, and efficiency, making it a popular choice among engineers for designing high-performance electronic circuits.
The device is characterized by its fast switching speed and low power losses, which enhances efficiency in power conversion systems. It is commonly used in applications such as power supplies, motor drives, and lighting systems. The MOSFET is housed in a TO-220FP package, which offers good thermal performance and electrical isolation.
Overall, the STF28N60M2 is valued for its robustness, reliability, and efficiency, making it a popular choice among engineers for designing high-performance electronic circuits.
Features
The STF28N60M2 is a power MOSFET from STMicroelectronics, part of the MDmesh II series. Some of its key features include:
1. N-channel Enhancement Mode: The device operates as an enhancement-mode N-channel MOSFET, ideal for high-efficiency power applications.
2. Drain-Source Voltage (Vds): It can handle Vds up to 600V.
3. Continuous Drain Current (Id): The maximum continuous drain current is 24A at 25°C.
4. Low On-Resistance (Rds(on)): It features low on-state resistance, enhancing efficiency by reducing power losses during conduction.
5. Fast Switching: The MOSFET is designed for high-speed switching applications, minimizing switching losses.
6. Energy Efficiency: Designed with ST's MDmesh II technology, it provides improved performance for energy-efficient designs.
7. TO-220 Package: Offered in a TO-220 package, ensuring good thermal performance and ease of use in various circuit designs.
These features make the STF28N60M2 suitable for a range of applications, including switch-mode power supplies, converters, and other high-voltage power applications.
1. N-channel Enhancement Mode: The device operates as an enhancement-mode N-channel MOSFET, ideal for high-efficiency power applications.
2. Drain-Source Voltage (Vds): It can handle Vds up to 600V.
3. Continuous Drain Current (Id): The maximum continuous drain current is 24A at 25°C.
4. Low On-Resistance (Rds(on)): It features low on-state resistance, enhancing efficiency by reducing power losses during conduction.
5. Fast Switching: The MOSFET is designed for high-speed switching applications, minimizing switching losses.
6. Energy Efficiency: Designed with ST's MDmesh II technology, it provides improved performance for energy-efficient designs.
7. TO-220 Package: Offered in a TO-220 package, ensuring good thermal performance and ease of use in various circuit designs.
These features make the STF28N60M2 suitable for a range of applications, including switch-mode power supplies, converters, and other high-voltage power applications.
Package
The STF28N60M2 is a MOSFET transistor and comes in a TO-220 package. The TO-220 package type is commonly used for power semiconductors, providing efficient heat dissipation with a metal tab for mounting with a heatsink.
Pinout
The STF28N60M2 is a power MOSFET from STMicroelectronics, and it comes in a TO-220FP package. This type of MOSFET typically has three pins:
1. Gate (G): This pin is used to turn the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows out through this pin when the MOSFET is in the 'on' state. The drain is connected to the load in most configurations.
3. Source (S): Current flows into this pin, completing the circuit when the MOSFET is in the 'on' state.
The STF28N60M2 is designed for high-efficiency power management applications, with a voltage rating of 600V and a current capability of 28A. It is used in applications like power supplies and motor controllers due to its low on-resistance and fast switching capability. Its insulated package (FP standing for Full-Pack) helps in reducing heat dissipation needs.
1. Gate (G): This pin is used to turn the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows out through this pin when the MOSFET is in the 'on' state. The drain is connected to the load in most configurations.
3. Source (S): Current flows into this pin, completing the circuit when the MOSFET is in the 'on' state.
The STF28N60M2 is designed for high-efficiency power management applications, with a voltage rating of 600V and a current capability of 28A. It is used in applications like power supplies and motor controllers due to its low on-resistance and fast switching capability. Its insulated package (FP standing for Full-Pack) helps in reducing heat dissipation needs.
Manufacturer
The STF28N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of products for various electronic applications. It serves a broad spectrum of markets, including automotive, industrial, personal electronics, and communications equipment. The company is recognized for offering efficient and innovative solutions that enhance everyday life by enabling smarter driving, homes, and factories. With a focus on sustainability and innovation, STMicroelectronics provides a comprehensive portfolio of microcontrollers, sensors, power management products, and more.
Application
The STF28N60M2 is a power MOSFET typically used in applications requiring high-efficiency switching. Key areas include power supplies, motor drives, inverters, and converters, where it helps enhance energy efficiency and system performance. Its robust design makes it suitable for use in industrial equipment, solar inverters, and other power management systems. Its high voltage and current ratings allow it to handle demanding environments, making it ideal for these applications.
Equivalent
The STF28N60M2 is a power MOSFET from STMicroelectronics. Equivalent products might include the IRFP460 from Infineon, the IXFH40N60P from IXYS, or the FQA28N60 from ON Semiconductor. Ensure to compare specifications like voltage, current rating, and package type to confirm suitability.
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