STF26NM60N

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STF26NM60N

MOSFET N-CH 600V 20A TO220FP

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仕様

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 165mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1800 pF @ 50 V
PowerDissipation(Max) 35W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

概要

Description

The STF26NM60N is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 26A, making it suitable for various power management tasks such as switching, amplification, and signal modulation.
Key characteristics include low on-state resistance (R_DS(on)), which reduces power losses during operation, and fast switching speeds, enhancing efficiency in power conversion applications. The device is typically used in power supplies, motor drivers, and inverters for renewable energy systems.
Its TO-220 package facilitates effective heat dissipation, allowing for reliable performance in demanding environments. Overall, the STF26NM60N combines robustness and efficiency, making it a popular choice among engineers for high-voltage circuit designs.

Features

The STF26NM60N is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) up to 26A at 25°C.
- R_DS(on): Low on-state resistance (typically 0.32 Ω at V_GS = 10V), which reduces conduction losses.
- Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for easier driving with standard logic levels.
- Fast Switching: Designed for high-speed switching applications, minimizing switching losses.
- Package: Available in TO-220, providing effective thermal management.
- Applications: Suitable for switch-mode power supplies, DC-DC converters, motor control, and other high-voltage applications.
Overall, the STF26NM60N offers a balance of high voltage, robust current handling, and low resistance, making it a versatile choice for various power electronic circuits.

Package

The STF26NM60N is typically packaged in a TO-220 form factor. This package type offers good thermal performance and is suitable for high-power applications.

Pinout

The STF26NM60N is a power MOSFET with a total of 6 pins. Its pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET; receives the input signal.
2. Drain (D): The output terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): Connected to ground or negative voltage; current flows into the source when the MOSFET is conducting.
The standard pin configuration for the STF26NM60N is:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Gate
- Pin 6: Source
This MOSFET is designed for high voltage applications, rated for 600V, and is typically used in power management and switching applications.

Manufacturer

The STF26NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a broad range of semiconductor products, including microcontrollers, sensors, and power transistors like the STF26NM60N. The company serves various industries such as automotive, industrial, personal electronics, and telecommunications, providing innovative solutions for energy efficiency and connectivity. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide, emphasizing sustainability and cutting-edge technology in its product offerings.

Application

The STF26NM60N is a N-channel MOSFET primarily used in high-power applications such as:
1. Switching Power Supplies: For efficient voltage regulation and power conversion.
2. Motor Drives: In electric vehicles and industrial machinery.
3. Inverters: For renewable energy applications like solar power systems.
4. LED Drivers: For efficient control of high-power LED lighting.
5. Audio Amplifiers: In high-performance audio equipment.
Its high voltage and current ratings make it suitable for these applications.

Equivalent

The STF26NM60N is a N-channel MOSFET rated for 600V and 26A. Equivalent products include the STP26NM60N, IRF840, FQA26N60, and MTP26N60. Check specifications for gate threshold voltage, RDS(on), and other parameters to ensure compatibility in your application. Always consult datasheets for precise comparisons.

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DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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